Forming a memory device using sputtering to deposit silver-selenide film
    8.
    发明授权
    Forming a memory device using sputtering to deposit silver-selenide film 有权
    使用溅射形成存储器件以沉积硒化银膜

    公开(公告)号:US09552986B2

    公开(公告)日:2017-01-24

    申请号:US14253649

    申请日:2014-04-15

    摘要: A method of sputter depositing silver selenide and controlling the stoichiometry and nodular defect formations of a sputter deposited silver-selenide film. The method includes depositing silver-selenide using a sputter deposition process at a pressure of about 0.3 mTorr to about 10 mTorr. In accordance with one aspect of the invention, an RF sputter deposition process may be used preferably at pressures of about 2 mTorr to about 3 mTorr. In accordance with another aspect of the invention, a pulse DC sputter deposition process may be used preferably at pressures of about 4 mTorr to about 5 mTorr.

    摘要翻译: 溅射沉积硒化银并控制溅射沉积的硒化银膜的化学计量和结节缺陷形成的方法。 该方法包括在约0.3mTorr至约10mTorr的压力下使用溅射沉积工艺沉积硒化银。 根据本发明的一个方面,RF溅射沉积工艺可以优选地在约2mTorr至约3mTorr的压力下使用。 根据本发明的另一方面,脉冲DC溅射沉积工艺可优选地在约4mTorr至约5mTorr的压力下使用。