公开(公告)号：US09305709B2

公开(公告)日：2016-04-05

申请号：US14506976

申请日：2014-10-06

申请人： BlackBerry Limited

发明人： Ivoyl Koutsaroff ,  Mark Vandermeulen ,  Andrew Cervin-Lawry ,  Atin J. Patel

IPC分类号： H01L21/20 ,  H01G4/38 ,  H01G4/33 ,  H01L27/01 ,  H05K1/16 ,  H01G13/04 ,  H05K1/03 ,  H05K3/38

CPC分类号： H01G4/38 ,  H01G4/33 ,  H01G13/04 ,  H01L27/016 ,  H05K1/0306 ,  H05K1/162 ,  H05K3/38 ,  H05K3/388 ,  H05K2201/0175 ,  H05K2201/0179 ,  Y10T29/49126 ,  Y10T29/49155

摘要： In accordance with the teachings described herein, a multi-level thin film capacitor on a ceramic substrate and method of manufacturing the same are provided. The multi-level thin film capacitor (MLC) may include at least one high permittivity dielectric layer between at least two electrode layers, the electrode layers being formed from a conductive thin film material. A buffer layer may be included between the ceramic substrate and the thin film MLC. The buffer layer may have a smooth surface with a surface roughness (Ra) less than or equal to 0.08 micrometers (um).

摘要翻译： 根据本文所述的教导，提供了陶瓷基板上的多层薄膜电容器及其制造方法。 多层薄膜电容器（MLC）可以在至少两个电极层之间包括至少一个高介电常数介电层，电极层由导电薄膜材料形成。 陶瓷基板和薄膜MLC之间可以包括缓冲层。 缓冲层可以具有小于或等于0.08微米（μm）的表面粗糙度（Ra）的光滑表面。

公开(公告)号：US20140037835A1

公开(公告)日：2014-02-06

申请号：US14035195

申请日：2013-09-24

申请人： BlackBerry Limited

发明人： Ivoyl P. Koutsaroff ,  Mark Vandermeulen ,  Andrew Vladimir Claude Cervin ,  Atin J. Patel

IPC分类号： H01G4/38 ,  H01G13/04

CPC分类号： H01G4/38 ,  H01G4/33 ,  H01G13/04 ,  H01L27/016 ,  H05K1/0306 ,  H05K1/162 ,  H05K3/38 ,  H05K3/388 ,  H05K2201/0175 ,  H05K2201/0179 ,  Y10T29/49126 ,  Y10T29/49155

摘要： In accordance with the teachings described herein, a multi-level thin film capacitor on a ceramic substrate and method of manufacturing the same are provided. The multi-level thin film capacitor (MLC) may include at least one high permittivity dielectric layer between at least two electrode layers, the electrode layers being formed from a conductive thin film material. A buffer layer may be included between the ceramic substrate and the thin film MLC. The buffer layer may have a smooth surface with a surface roughness (Ra) less than or equal to 0.08 micrometers (um).

摘要翻译： 根据本文所述的教导，提供了陶瓷基板上的多层薄膜电容器及其制造方法。 多层薄膜电容器（MLC）可以在至少两个电极层之间包括至少一个高介电常数介电层，电极层由导电薄膜材料形成。 陶瓷基板和薄膜MLC之间可以包括缓冲层。 缓冲层可以具有小于或等于0.08微米（μm）的表面粗糙度（Ra）的光滑表面。

公开(公告)号：US08883606B2

公开(公告)日：2014-11-11

申请号：US14035195

申请日：2013-09-24

申请人： BlackBerry Limited

发明人： Ivoyl P. Koutsaroff ,  Mark Vandermeulen ,  Andrew Vladimir Claude Cervin ,  Atin J. Patel

IPC分类号： H01L21/20 ,  H05K1/16 ,  H01G4/38 ,  H01L27/01 ,  H01G4/33 ,  H01G13/04 ,  H05K3/38 ,  H05K1/03

CPC分类号： H01G4/38 ,  H01G4/33 ,  H01G13/04 ,  H01L27/016 ,  H05K1/0306 ,  H05K1/162 ,  H05K3/38 ,  H05K3/388 ,  H05K2201/0175 ,  H05K2201/0179 ,  Y10T29/49126 ,  Y10T29/49155

摘要： In accordance with the teachings described herein, a multi-level thin film capacitor on a ceramic substrate and method of manufacturing the same are provided. The multi-level thin film capacitor (MLC) may include at least one high permittivity dielectric layer between at least two electrode layers, the electrode layers being formed from a conductive thin film material. A buffer layer may be included between the ceramic substrate and the thin film MLC. The buffer layer may have a smooth surface with a surface roughness (Ra) less than or equal to 0.08 micrometers (um).

摘要翻译： 根据本文所述的教导，提供了陶瓷基板上的多层薄膜电容器及其制造方法。 多层薄膜电容器（MLC）可以在至少两个电极层之间包括至少一个高介电常数介电层，电极层由导电薄膜材料形成。 陶瓷基板和薄膜MLC之间可以包括缓冲层。 缓冲层可以具有小于或等于0.08微米（μm）的表面粗糙度（Ra）的光滑表面。

公开(公告)号：US20150093497A1

公开(公告)日：2015-04-02

申请号：US14506976

申请日：2014-10-06

申请人： BlackBerry Limited

发明人： Ivoyl Koutsaroff ,  Mark Vandermeulen ,  Andrew Cervin-Lawry ,  Atin J. Patel

IPC分类号： H01G4/38 ,  H01G4/33 ,  H01G13/04

CPC分类号： H01G4/38 ,  H01G4/33 ,  H01G13/04 ,  H01L27/016 ,  H05K1/0306 ,  H05K1/162 ,  H05K3/38 ,  H05K3/388 ,  H05K2201/0175 ,  H05K2201/0179 ,  Y10T29/49126 ,  Y10T29/49155

摘要： In accordance with the teachings described herein, a multi-level thin film capacitor on a ceramic substrate and method of manufacturing the same are provided. The multi-level thin film capacitor (MLC) may include at least one high permittivity dielectric layer between at least two electrode layers, the electrode layers being formed from a conductive thin film material. A buffer layer may be included between the ceramic substrate and the thin film MLC. The buffer layer may have a smooth surface with a surface roughness (Ra) less than or equal to 0.08 micrometers (um).

摘要翻译： 根据本文所述的教导，提供了陶瓷基板上的多层薄膜电容器及其制造方法。 多层薄膜电容器（MLC）可以在至少两个电极层之间包括至少一个高介电常数介电层，电极层由导电薄膜材料形成。 陶瓷基板和薄膜MLC之间可以包括缓冲层。 缓冲层可以具有小于或等于0.08微米（μm）的表面粗糙度（Ra）的光滑表面。