摘要:
An organic light-emitting display device includes a buffer layer on a substrate that has a plurality of insulating layers having different refractive indexes, and at least one of the insulating layers have different thicknesses on the same level. The device further includes an active layer of a thin film transistor in a thick area of the buffer layer, a pixel electrode in a thin area of the buffer layer, a gate electrode of the thin film transistor on the active layer and source and drain electrodes of the thin film transistor connected to the active layer, and a gate insulating layer between the gate electrode and the source and drain electrodes. The device also includes an emission layer on the pixel electrode, an opposite electrode facing the pixel electrode, and the emission layer is between the opposite electrode and the pixel electrode.
摘要:
An organic light-emitting display device includes a buffer layer on a substrate that has a plurality of insulating layers having different refractive indexes, and at least one of the insulating layers have different thicknesses on the same level. The device further includes an active layer of a thin film transistor in a thick area of the buffer layer, a pixel electrode in a thin area of the buffer layer, a gate electrode of the thin film transistor on the active layer and source and drain electrodes of the thin film transistor connected to the active layer, and a gate insulating layer between the gate electrode and the source and drain electrodes. The device also includes an emission layer on the pixel electrode, an opposite electrode facing the pixel electrode, and the emission layer is between the opposite electrode and the pixel electrode.
摘要:
An organic light emitting diode display, which can obtain a resonance effect by its metal mirror, and a manufacturing method thereof. The display includes a semiconductor layer, a dummy pattern layer, a gate insulating film, a pixel electrode, and a gate electrode. The semiconductor layer is formed of polysilicon on a base substrate. The dummy pattern layer is formed of polysilicon at a same layer level as the semiconductor layer and surrounds a light emitting region. The gate insulating film is on the base substrate while covering the semiconductor layer and the dummy pattern layer, and has recess portions corresponding to the light emitting region. The pixel electrode is filled in the recess portions, and is formed of a metal mirror multilayer including a transmissive conductive film and a reflective conductive film. The gate electrode is on the gate insulating film at a distance from the pixel electrode.
摘要:
An organic light emitting diode display, which can obtain a resonance effect by its metal mirror, and a manufacturing method thereof. The display includes a semiconductor layer, a dummy pattern layer, a gate insulating film, a pixel electrode, and a gate electrode. The semiconductor layer is formed of polysilicon on a base substrate. The dummy pattern layer is formed of polysilicon at a same layer level as the semiconductor layer and surrounds a light emitting region. The gate insulating film is on the base substrate while covering the semiconductor layer and the dummy pattern layer, and has recess portions corresponding to the light emitting region. The pixel electrode is filled in the recess portions, and is formed of a metal mirror multilayer including a transmissive conductive film and a reflective conductive film. The gate electrode is on the gate insulating film at a distance from the pixel electrode.
摘要:
A thin-film transistor array substrate is disclosed. In one embodiment, the transistor includes a capacitor including a lower electrode disposed on the same layer as an active layer and an upper electrode disposed on the same layer as a gate electrode. The transistor may also include a first insulating layer disposed between the active layer and the gate electrode and between the lower and upper electrodes, the first insulating layer not being disposed on a perimeter of the lower electrode. The transistor may further include a second insulating layer between the first insulating layer and the source and drain electrodes, the second insulating layer not being disposed on perimeters of the upper and lower electrodes.
摘要:
A thin-film transistor array substrate is disclosed. In one embodiment, the transistor includes a capacitor including a lower electrode disposed on the same layer as an active layer and an upper electrode disposed on the same layer as a gate electrode. The transistor may also include a first insulating layer disposed between the active layer and the gate electrode and between the lower and upper electrodes, the first insulating layer not being disposed on a perimeter of the lower electrode. The transistor may further include a second insulating layer between the first insulating layer and the source and drain electrodes, the second insulating layer not being disposed on perimeters of the upper and lower electrodes.
摘要:
An OLED device includes a thin film transistor including an active layer, a gate bottom electrode, a gate top electrode, an insulating layer covering the gate electrode, and a source electrode and a drain electrode on the insulating layer contacting the active layer; an organic light-emitting device electrically connected to the thin film transistor and including a sequentially stacked pixel electrode, on the same layer as the gate bottom electrode, emissive layer, and, opposite electrode, a pad bottom electrode on the same layer as the gate bottom electrode and a pad top electrode pattern on the same layer as the gate top electrode, the pad top electrode pattern including openings exposing the pad bottom electrode, and an insulation pattern covering the upper surface of the pad top electrode pattern on the same layer as the insulating layer, on an upper surface of the pad bottom electrode.
摘要:
In an organic light-emitting display apparatus and a method of manufacturing the same, the organic light-emitting display apparatus comprises: at least one transistor, each including a semiconductor layer, a gate electrode, and source and drain electrodes; a first capacitor including a first electrode formed on the same plane as the semiconductor layer, a second electrode formed on the same plane as the gate electrode, and a third electrode formed on the same plane as the source and drain electrodes; a second capacitor including a first electrode formed on the same plane as the semiconductor layer and comprising ion impurities, and a second electrode formed on the same plane as the gate electrode; a pixel electrode formed on the same plane as the gate electrode and electrically connected to the transistor; a light-emitting layer disposed on the pixel electrode; and an opposite electrode disposed on the light-emitting layer and facing the pixel electrode.
摘要:
A method of manufacturing an organic light-emitting display device includes forming a silicon layer and a gate insulating film over a substrate having a transistor region and a capacitor region; forming a halftone photoresist over the substrate; patterning the silicon layer and the gate insulating film; forming a residual photoresist by subjecting the halftone photoresist to an ashing process to leave part of the halftone photoresist over the transistor region; and doping at least a portion of the silicon layer with impurities by applying the impurities over an entire region of the substrate.
摘要:
In an organic light-emitting display apparatus and a method of manufacturing the same, the organic light-emitting display apparatus comprises: at least one transistor, each including a semiconductor layer, a gate electrode, and source and drain electrodes; a first capacitor including a first electrode formed on the same plane as the semiconductor layer, a second electrode formed on the same plane as the gate electrode, and a third electrode formed on the same plane as the source and drain electrodes; a second capacitor including a first electrode formed on the same plane as the semiconductor layer and comprising ion impurities, and a second electrode formed on the same plane as the gate electrode; a pixel electrode formed on the same plane as the gate electrode and electrically connected to the transistor; a light-emitting layer disposed on the pixel electrode; and an opposite electrode disposed on the light-emitting layer and facing the pixel electrode.