Methods of fabricating organic thin film transistors
    1.
    发明授权
    Methods of fabricating organic thin film transistors 有权
    制造有机薄膜晶体管的方法

    公开(公告)号:US08476103B2

    公开(公告)日:2013-07-02

    申请号:US13355940

    申请日:2012-01-23

    IPC分类号: H01L21/00

    摘要: Disclosed is a method for forming banks during the fabrication of electronic devices incorporating an organic semiconductor material that includes preparing an aqueous coating composition having at least a water-soluble polymer, a UV curing agent and a water-soluble fluorine compound. This coating composition is applied to a substrate, exposed using UV radiation and then developed using an aqueous developing composition to form the bank pattern. Because the coating composition can be developed using an aqueous composition rather than an organic solvent or solvent system, the method tends to preserve the integrity of other organic structures present on the substrate. Further, the incorporation of the fluorine compound in the aqueous solution provides a degree of control over the contact angles exhibited on the surface of the bank pattern and thereby can avoid or reduce subsequent surface treatments.

    摘要翻译: 公开了一种在制造包含有机半导体材料的电子器件的过程中形成堤的方法,包括制备至少具有水溶性聚合物,UV固化剂和水溶性氟化合物的水性涂料组合物。 将该涂料组合物施加到基材上,使用UV辐射曝光,然后使用水性显影组合物显影以形成图案。 因为涂料组合物可以使用水性组合物而不是有机溶剂或溶剂体系显影,所以该方法倾向于保持存在于基材上的其它有机结构的完整性。 此外,氟化合物在水溶液中的引入提供了对在堤形图案的表面上显示的接触角的控制程度,从而可以避免或减少随后的表面处理。

    Methods for forming banks and organic thin film transistors comprising such banks
    2.
    发明申请
    Methods for forming banks and organic thin film transistors comprising such banks 有权
    用于形成包括这种堤的堤和有机薄膜晶体管的方法

    公开(公告)号:US20070193978A1

    公开(公告)日:2007-08-23

    申请号:US11633006

    申请日:2006-12-04

    IPC分类号: H01L29/06 B44C1/22 C23F1/00

    摘要: Disclosed is a method for forming banks during the fabrication of electronic devices incorporating an organic semiconductor material that includes preparing an aqueous coating composition having at least a water-soluble polymer, a UV curing agent and a water-soluble fluorine compound. This coating composition is applied to a substrate, exposed using UV radiation and then developed using an aqueous developing composition to form the bank pattern. Because the coating composition can be developed using an aqueous composition rather than an organic solvent or solvent system, the method tends to preserve the integrity of other organic structures present on the substrate. Further, the incorporation of the fluorine compound in the aqueous solution provides a degree of control over the contact angles exhibited on the surface of the bank pattern and thereby can avoid or reduce subsequent surface treatments.

    摘要翻译: 公开了一种在制造包含有机半导体材料的电子器件的过程中形成堤的方法,包括制备至少具有水溶性聚合物,UV固化剂和水溶性氟化合物的水性涂料组合物。 将该涂料组合物施加到基材上,使用UV辐射曝光,然后使用水性显影组合物显影以形成图案。 因为涂料组合物可以使用水性组合物而不是有机溶剂或溶剂体系显影,所以该方法倾向于保持存在于基材上的其它有机结构的完整性。 此外,氟化合物在水溶液中的引入提供了对在堤形图案的表面上显示的接触角的控制程度,从而可以避免或减少随后的表面处理。

    METHODS OF FABRICATING ORGANIC THIN FILM TRANSISTORS
    3.
    发明申请
    METHODS OF FABRICATING ORGANIC THIN FILM TRANSISTORS 有权
    制造有机薄膜晶体管的方法

    公开(公告)号:US20120122275A1

    公开(公告)日:2012-05-17

    申请号:US13355940

    申请日:2012-01-23

    IPC分类号: H01L51/05

    摘要: Disclosed is a method for forming banks during the fabrication of electronic devices incorporating an organic semiconductor material that includes preparing an aqueous coating composition having at least a water-soluble polymer, a UV curing agent and a water-soluble fluorine compound. This coating composition is applied to a substrate, exposed using UV radiation and then developed using an aqueous developing composition to form the bank pattern. Because the coating composition can be developed using an aqueous composition rather than an organic solvent or solvent system, the method tends to preserve the integrity of other organic structures present on the substrate. Further, the incorporation of the fluorine compound in the aqueous solution provides a degree of control over the contact angles exhibited on the surface of the bank pattern and thereby can avoid or reduce subsequent surface treatments.

    摘要翻译: 公开了一种在制造包含有机半导体材料的电子器件的过程中形成堤的方法,包括制备至少具有水溶性聚合物,UV固化剂和水溶性氟化合物的水性涂料组合物。 将该涂料组合物施加到基材上,使用UV辐射曝光,然后使用水性显影组合物显影以形成图案。 因为涂料组合物可以使用水性组合物而不是有机溶剂或溶剂体系显影,所以该方法倾向于保持存在于基材上的其它有机结构的完整性。 此外,氟化合物在水溶液中的引入提供了对在堤形图案的表面上显示的接触角的控制程度,从而可以避免或减少随后的表面处理。

    Methods for forming banks and organic thin film transistors comprising such banks
    4.
    发明授权
    Methods for forming banks and organic thin film transistors comprising such banks 有权
    用于形成包括这种堤的堤和有机薄膜晶体管的方法

    公开(公告)号:US08323875B2

    公开(公告)日:2012-12-04

    申请号:US11633006

    申请日:2006-12-04

    IPC分类号: G30F7/00

    摘要: Disclosed is a method for forming banks during the fabrication of electronic devices incorporating an organic semiconductor material that includes preparing an aqueous coating composition having at least a water-soluble polymer, a UV curing agent and a water-soluble fluorine compound. This coating composition is applied to a substrate, exposed using UV radiation and then developed using an aqueous developing composition to form the bank pattern. Because the coating composition can be developed using an aqueous composition rather than an organic solvent or solvent system, the method tends to preserve the integrity of other organic structures present on the substrate. Further, the incorporation of the fluorine compound in the aqueous solution provides a degree of control over the contact angles exhibited on the surface of the bank pattern and thereby can avoid or reduce subsequent surface treatments.

    摘要翻译: 公开了一种在制造包含有机半导体材料的电子器件的过程中形成堤的方法,包括制备至少具有水溶性聚合物,UV固化剂和水溶性氟化合物的水性涂料组合物。 将该涂料组合物施加到基材上,使用UV辐射曝光,然后使用水性显影组合物显影以形成图案。 因为涂料组合物可以使用水性组合物而不是有机溶剂或溶剂体系显影,所以该方法倾向于保持存在于基材上的其它有机结构的完整性。 此外,氟化合物在水溶液中的引入提供了对在堤形图案的表面上显示的接触角的控制程度,从而可以避免或减少随后的表面处理。

    Methods of fabricating organic thin film transistors and organic thin film transistors fabricated using the same
    5.
    发明申请
    Methods of fabricating organic thin film transistors and organic thin film transistors fabricated using the same 有权
    制造有机薄膜晶体管的方法和使用其制造的有机薄膜晶体管

    公开(公告)号:US20070194386A1

    公开(公告)日:2007-08-23

    申请号:US11604826

    申请日:2006-11-28

    IPC分类号: H01L29/94

    摘要: Disclosed are methods of fabricating organic thin film transistors composed of a substrate, a gate electrode, a gate insulating film, metal oxide source/drain electrodes, and an organic semiconductor layer. The methods include applying a sufficient quantity of a self-assembled monolayer compound containing a live ion to the surfaces of the metal oxide electrodes to form a self-assembled monolayer. The presence of the live ion at the interface between the metal oxide electrodes and the organic semiconductor layer modifies the relative work function of these materials. Further, the presence of the self-assembled monolayer on the gate insulating film tends to reduce hysteresis. Accordingly, organic thin film transistors fabricated in accord with the example embodiments tend to exhibit improved charge mobility, improved gate insulating film properties and decreased hysteresis associated with the organic insulator.

    摘要翻译: 公开了制造由基板,栅极,栅极绝缘膜,金属氧化物源极/漏极和有机半导体层组成的有机薄膜晶体管的方法。 所述方法包括将足够量的含有活性离子的自组装单层化合物施加到金属氧化物电极的表面以形成自组装单层。 在金属氧化物电极和有机半导体层之间的界面处存在活性离子来改变这些材料的相对功函数。 此外,在栅极绝缘膜上存在自组装单层趋于减小滞后。 因此,根据示例性实施例制造的有机薄膜晶体管倾向于表现出改善的电荷迁移率,改善的栅极绝缘膜性质和与有机绝缘体相关联的减小的滞后。

    Methods of fabricating organic thin film transistors and organic thin film transistors fabricated using the same
    6.
    发明授权
    Methods of fabricating organic thin film transistors and organic thin film transistors fabricated using the same 有权
    制造有机薄膜晶体管的方法和使用其制造的有机薄膜晶体管

    公开(公告)号:US08053761B2

    公开(公告)日:2011-11-08

    申请号:US11604826

    申请日:2006-11-28

    IPC分类号: H01L51/10 H01L51/30 H01L51/40

    摘要: Disclosed are methods of fabricating organic thin film transistors composed of a substrate, a gate electrode, a gate insulating film, metal oxide source/drain electrodes, and an organic semiconductor layer. The methods include applying a sufficient quantity of a self-assembled monolayer compound containing a live ion to the surfaces of the metal oxide electrodes to form a self-assembled monolayer. The presence of the live ion at the interface between the metal oxide electrodes and the organic semiconductor layer modifies the relative work function of these materials. Further, the presence of the self-assembled monolayer on the gate insulating film tends to reduce hysteresis. Accordingly, organic thin film transistors fabricated in accord with the example embodiments tend to exhibit improved charge mobility, improved gate insulating film properties and decreased hysteresis associated with the organic insulator.

    摘要翻译: 公开了制造由基板,栅极,栅极绝缘膜,金属氧化物源极/漏极和有机半导体层组成的有机薄膜晶体管的方法。 所述方法包括将足够量的含有活性离子的自组装单层化合物施加到金属氧化物电极的表面以形成自组装单层。 在金属氧化物电极和有机半导体层之间的界面处存在活性离子来改变这些材料的相对功函数。 此外,在栅极绝缘膜上存在自组装单层趋于减小滞后。 因此,根据示例性实施例制造的有机薄膜晶体管倾向于表现出改善的电荷迁移率,改善的栅极绝缘膜性质和与有机绝缘体相关联的减小的滞后。

    Compositions for forming organic insulating films, methods for forming organic insulating films using the compositions and organic thin film transistors comprising an organic insulating film formed by such a method
    7.
    发明授权
    Compositions for forming organic insulating films, methods for forming organic insulating films using the compositions and organic thin film transistors comprising an organic insulating film formed by such a method 有权
    用于形成有机绝缘膜的组合物,使用该组合物形成有机绝缘膜的方法和包括通过这种方法形成的有机绝缘膜的有机薄膜晶体管

    公开(公告)号:US07994071B2

    公开(公告)日:2011-08-09

    申请号:US11633008

    申请日:2006-12-04

    IPC分类号: H01L21/31 H01L21/469

    摘要: Disclosed are compositions for forming organic insulating films and methods for forming organic insulating films using one or more of the compositions. The compositions include at least one ultraviolet (UV) curing agent, at least one water-soluble polymer and at least one water-soluble fluorine compound, and the method includes applying the composition to a substrate to form a coating layer, irradiating the coating layer with UV light to form an exposed layer and developing the exposed layer with an aqueous developing solution to obtain an organic insulating film and/or pattern. Also disclosed are organic thin film transistors comprising an organic insulating film formed by one of the methods using one of the compositions that may exhibit improved hysteresis performance and/or acceptable surface properties without the need for additional processing, thereby simplifying the fabrication process.

    摘要翻译: 公开了用于形成有机绝缘膜的组合物和使用一种或多种组合物形成有机绝缘膜的方法。 该组合物包括至少一种紫外线(UV)固化剂,至少一种水溶性聚合物和至少一种水溶性氟化合物,并且该方法包括将该组合物施用于基材以形成涂层,照射该涂层 用UV光形成曝光层,并用含水显影液显影曝光层,得到有机绝缘膜和/或图案。 还公开了有机薄膜晶体管,其包括通过使用可以显示出改进的滞后性能和/或可接受的表面性质的组合物之一的方法之一形成的有机绝缘膜,而不需要额外的处理,从而简化了制造工艺。

    Compositions for forming organic insulating films, methods for forming organic insulating films using the compositions and organic thin film transistors comprising an organic insulating film formed by such a method
    8.
    发明申请
    Compositions for forming organic insulating films, methods for forming organic insulating films using the compositions and organic thin film transistors comprising an organic insulating film formed by such a method 有权
    用于形成有机绝缘膜的组合物,使用该组合物形成有机绝缘膜的方法和包括通过这种方法形成的有机绝缘膜的有机薄膜晶体管

    公开(公告)号:US20070259476A1

    公开(公告)日:2007-11-08

    申请号:US11633008

    申请日:2006-12-04

    IPC分类号: H01L51/40

    摘要: Disclosed are compositions for forming organic insulating films and methods for forming organic insulating films using one or more of the compositions. The compositions include at least one ultraviolet (UV) curing agent, at least one water-soluble polymer and at least one water-soluble fluorine compound, and the method includes applying the composition to a substrate to form a coating layer, irradiating the coating layer with UV light to form an exposed layer and developing the exposed layer with an aqueous developing solution to obtain an organic insulating film and/or pattern. Also disclosed are organic thin film transistors comprising an organic insulating film formed by one of the methods using one of the compositions that may exhibit improved hysteresis performance and/or acceptable surface properties without the need for additional processing, thereby simplifying the fabrication process.

    摘要翻译: 公开了用于形成有机绝缘膜的组合物和使用一种或多种组合物形成有机绝缘膜的方法。 该组合物包括至少一种紫外线(UV)固化剂,至少一种水溶性聚合物和至少一种水溶性氟化合物,并且该方法包括将该组合物施用于基材以形成涂层,照射该涂层 用UV光形成曝光层,并用含水显影液显影曝光层,得到有机绝缘膜和/或图案。 还公开了有机薄膜晶体管,其包括通过使用可以显示出改进的滞后性能和/或可接受的表面性质的组合物之一的方法之一形成的有机绝缘膜,而不需要额外的处理,从而简化了制造工艺。

    Organic thin film transistor comprising fluorine-based polymer thin film and method for fabricating the same
    9.
    发明申请
    Organic thin film transistor comprising fluorine-based polymer thin film and method for fabricating the same 有权
    含氟基聚合物薄膜的有机薄膜晶体管及其制造方法

    公开(公告)号:US20070194305A1

    公开(公告)日:2007-08-23

    申请号:US11606287

    申请日:2006-11-30

    IPC分类号: H01L29/08

    摘要: Disclosed is an organic thin film transistor, including a substrate, a gate electrode, a gate insulating layer, an organic semiconductor layer, and source/drain electrodes, in which a fluorine-based polymer thin film is provided between the source/drain electrodes and the organic semiconductor layer. A method of fabricating such an organic thin film transistor is also provided. According to example embodiments, the organic thin film transistor may have increased charge mobility and an Ion/Ioff ratio, due to decreased contact resistance between the source/drain electrodes and the organic semiconductor layer. Moreover, upon the formation of the organic semiconductor layer and insulating film, a wet process may be more easily applied, thus simplifying the fabrication process and decreasing the fabrication cost.

    摘要翻译: 公开了一种有机薄膜晶体管,其包括基板,栅极电极,栅极绝缘层,有机半导体层和源极/漏极,其中在源极/漏极之间设置氟基聚合物薄膜和 有机半导体层。 还提供了制造这种有机薄膜晶体管的方法。 根据示例性实施例,由于源极/漏极之间的接触电阻降低,有机薄膜晶体管可能具有增加的电荷迁移率和I / 有机半导体层。 此外,在形成有机半导体层和绝缘膜时,可以更容易地应用湿法,从而简化制造工艺并降低制造成本。

    Organic thin film transistor comprising fluorine-based polymer thin film and method for fabricating the same
    10.
    发明授权
    Organic thin film transistor comprising fluorine-based polymer thin film and method for fabricating the same 有权
    含氟基聚合物薄膜的有机薄膜晶体管及其制造方法

    公开(公告)号:US07646014B2

    公开(公告)日:2010-01-12

    申请号:US11606287

    申请日:2006-11-30

    IPC分类号: H01L35/24

    摘要: Disclosed is an organic thin film transistor, including a substrate, a gate electrode, a gate insulating layer, an organic semiconductor layer, and source/drain electrodes, in which a fluorine-based polymer thin film is provided between the source/drain electrodes and the organic semiconductor layer. A method of fabricating such an organic thin film transistor is also provided. According to example embodiments, the organic thin film transistor may have increased charge mobility and an Ion/Ioff ratio, due to decreased contact resistance between the source/drain electrodes and the organic semiconductor layer. Moreover, upon the formation of the organic semiconductor layer and insulating film, a wet process may be more easily applied, thus simplifying the fabrication process and decreasing the fabrication cost.

    摘要翻译: 公开了一种有机薄膜晶体管,其包括基板,栅极电极,栅极绝缘层,有机半导体层和源极/漏极,其中在源极/漏极之间设置氟基聚合物薄膜和 有机半导体层。 还提供了制造这种有机薄膜晶体管的方法。 根据示例性实施例,由于源/漏电极和有机半导体层之间的接触电阻降低,有机薄膜晶体管可能具有增加的电荷迁移率和Ion / Ioff比。 此外,在形成有机半导体层和绝缘膜时,可以更容易地应用湿法,从而简化制造工艺并降低制造成本。