公开(公告)号：US10073643B2

公开(公告)日：2018-09-11

申请号：US15090806

申请日：2016-04-05

申请人： Bong-Kil Jung ,  Hyunggon Kim

发明人： Bong-Kil Jung ,  Hyunggon Kim

IPC分类号： G06F12/00 ,  G06F3/06 ,  G06F12/02

CPC分类号： G06F3/0632 ,  G06F3/0605 ,  G06F3/0658 ,  G06F3/0679 ,  G06F3/0688 ,  G06F12/0246 ,  G06F2212/2022 ,  G06F2212/72

摘要： A method of initializing a storage device includes; resetting an interface chip in response to a reset signal generated by the memory controller, loading a boot loader from a nonvolatile memory device via the interface chip in response to a nonvolatile memory initialization signal generated by the memory controller, and initializing a plurality of nonvolatile memory devices by executing the boot loader in the memory controller.

公开(公告)号：US08085601B2

公开(公告)日：2011-12-27

申请号：US12567819

申请日：2009-09-28

申请人： Hyunggon Kim

发明人： Hyunggon Kim

IPC分类号： G11C11/34

CPC分类号： G11C11/5628 ,  G11C16/0483 ,  G11C16/10

摘要： A programming method of a nonvolatile memory device includes precharging bit lines of the nonvolatile memory device based on loaded data, boosting channels corresponding to the respective precharged bit lines, after supplying word lines adjacent to a selected word line of the nonvolatile memory device with an initializing voltage, the selected word line is a word line selected for programming, and supplying a word line voltage for programming to the channels, after the channels are boosted.

摘要翻译： 非易失性存储器件的编程方法包括：在与非易失性存储器件的所选择的字线相邻的字线之后，基于加载的数据，对与各个预充电位线相对应的升压通道，对非易失性存储器件的位线进行初始化 电压时，所选择的字线是选择用于编程的字线，并且在通道被升压之后，向通道提供用于编程的字线电压。