公开(公告)号：US20140124898A1

公开(公告)日：2014-05-08

申请号：US14076094

申请日：2013-11-08

Applicant: Brewer Science Inc.

Inventor： Jyoti K. Malhotra ,  Jeff Leith ,  Curtis Planje

IPC: H01L21/308 ,  G03F1/22 ,  H01L29/06

CPC classification number: H01L29/0676 ,  B81C1/00111 ,  B81C99/008 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/50 ,  G03F7/0035 ,  H01L21/0259 ,  H01L21/02606 ,  H01L29/0665 ,  H01L29/0669 ,  H01L51/0048

Abstract: Manufacturing-friendly and scalable methods for the production of silicon micro- and nanostructures, including silicon nanotubes, are described. The inventive methods utilize conventional integrated circuit and MEMS manufacturing processes, including spin-coating, photolithography, wet and dry silicon etching, and photoassisted electrochemical etch processes. The invention also provides a novel mask, for maximizing the number of tubes obtained per surface area unit of the silicon substrate on which the tubes are built. The resulting tubes have thick and straight outer walls, as well as high aspect ratios.

Abstract translation: 描述了用于生产硅微纳米结构（包括硅纳米管）的制造友好且可扩展的方法。 本发明的方法利用传统的集成电路和MEMS制造工艺，包括旋涂，光刻，湿和干硅蚀刻以及光辅助电化学蚀刻工艺。 本发明还提供了一种新颖的掩模，用于最大化在其上构建管的硅衬底的每表面积单位获得的管的数目。 所得到的管具有厚而直的外壁以及高纵横比。

公开(公告)号：US09299778B2

公开(公告)日：2016-03-29

申请号：US14076094

申请日：2013-11-08

Applicant: Brewer Science Inc.

Inventor： Jyoti K. Malhotra ,  Jeff Leith ,  Curtis Planje

IPC: H01L21/00 ,  H01L29/06 ,  H01L21/02 ,  H01L51/00 ,  B82Y10/00 ,  B82Y40/00 ,  B81C1/00 ,  B81C99/00 ,  G03F1/50 ,  G03F7/00

CPC classification number: H01L29/0676 ,  B81C1/00111 ,  B81C99/008 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/50 ,  G03F7/0035 ,  H01L21/0259 ,  H01L21/02606 ,  H01L29/0665 ,  H01L29/0669 ,  H01L51/0048

Abstract: Manufacturing-friendly and scalable methods for the production of silicon micro- and nanostructures, including silicon nanotubes, are described. The inventive methods utilize conventional integrated circuit and MEMS manufacturing processes, including spin-coating, photolithography, wet and dry silicon etching, and photoassisted electrochemical etch processes. The invention also provides a novel mask, for maximizing the number of tubes obtained per surface area unit of the silicon substrate on which the tubes are built. The resulting tubes have thick and straight outer walls, as well as high aspect ratios.

Abstract translation: 描述了用于生产硅微纳米结构（包括硅纳米管）的制造友好且可扩展的方法。 本发明的方法利用传统的集成电路和MEMS制造工艺，包括旋涂，光刻，湿和干硅蚀刻以及光辅助电化学蚀刻工艺。 本发明还提供了一种新颖的掩模，用于最大化在其上构建管的硅衬底的每表面积单位获得的管的数目。 所得到的管具有厚而直的外壁以及高纵横比。