Gate array architecture
    1.
    发明授权
    Gate array architecture 失效
    门阵列架构

    公开(公告)号:US06974978B1

    公开(公告)日:2005-12-13

    申请号:US09262458

    申请日:1999-03-04

    申请人: Brian D. Possley

    发明人: Brian D. Possley

    CPC分类号: H01L27/118 H01L27/0207

    摘要: Briefly, in accordance with one embodiment of the invention, an integrated circuit includes: a gate array architecture. The gate array architecture includes a semiconductor substrate having a plurality of N-type diffusion regions and P-type diffusion regions. The diffusion regions have partially overlying polysilicon landing sites to form N-type and P-type transistors. The regions are relatively sized to form two distinct transistor sizes, smaller N- and P-type transistors and larger N- and P-type transistors.

    摘要翻译: 简而言之,根据本发明的一个实施例,集成电路包括:门阵列结构。 门阵列结构包括具有多个N型扩散区和P型扩散区的半导体衬底。 扩散区域具有部分覆盖多晶硅着陆点以形成N型和P型晶体管。 这些区域相对大小以形成两个不同的晶体管尺寸,较小的N型和P型晶体管以及较大的N型和P型晶体管。

    Gate array architecture
    4.
    发明授权
    Gate array architecture 失效
    门阵列架构

    公开(公告)号:US06753209B2

    公开(公告)日:2004-06-22

    申请号:US09902907

    申请日:2001-07-10

    申请人: Brian D. Possley

    发明人: Brian D. Possley

    IPC分类号: H01L2182

    CPC分类号: H01L27/118 H01L27/0207

    摘要: Briefly, in accordance with one embodiment of the invention, an integrated circuit includes: a gate array architecture. The gate array architecture includes a semiconductor substrate having a plurality of N-type diffusion regions and P-type diffusion regions. The diffusion regions have partially overlying polysilicon landing sites to form N-type and P-type transistors. The regions are relatively sized to form two distinct transistor sizes, smaller N- and P-type transistors and larger N- and P-type transistors.

    摘要翻译: 简而言之,根据本发明的一个实施例,集成电路包括:门阵列结构。 门阵列结构包括具有多个N型扩散区和P型扩散区的半导体衬底。 扩散区域具有部分覆盖多晶硅着陆点以形成N型和P型晶体管。 这些区域相对大小以形成两个不同的晶体管尺寸,较小的N型和P型晶体管以及较大的N型和P型晶体管。