公开(公告)号：US20060044891A1

公开(公告)日：2006-03-02

申请号：US10931472

申请日：2004-08-31

申请人： Feng Lin ,  Brent Keeth ,  Brian Johnson ,  Seong-hoon Lee

发明人： Feng Lin ,  Brent Keeth ,  Brian Johnson ,  Seong-hoon Lee

IPC分类号： G11C7/00

CPC分类号： G11C7/109 ,  G11C7/1006 ,  G11C7/1078 ,  G11C7/1087 ,  G11C7/22 ,  G11C7/222

摘要： A memory system couples command, address or write data signals from a memory controller to a memory device and read data signals from the memory device to the memory controller. A respective strobe generator circuit in each of the memory controller and the memory device each generates an in-phase strobe signal and a quadrature strobe signal. Command, address or write data signals stored in respective output latches in the memory controller are clocked by the in-phase signals from the internal strobe generator circuit. These command, address or write data signals are latched into input latches in the memory device by the quadrature strobe signal coupled from the memory controller to the memory device. In substantially the same manner, read data signals are coupled from the memory device to the memory controller using the in-phase and quadrature strobe signals generated by the internal strobe generator circuit.

公开(公告)号：US06930955B2

公开(公告)日：2005-08-16

申请号：US10851081

申请日：2004-05-24

申请人： Brian Johnson ,  Brent Keeth ,  Feng Lin

发明人： Brian Johnson ,  Brent Keeth ,  Feng Lin

IPC分类号： G11C7/10 ,  G11C7/22 ,  G11C8/00 ,  G11C11/4076

CPC分类号： G11C7/222 ,  G11C7/1072 ,  G11C11/4076

摘要： A method and apparatus for managing the variable timing of internal clock signals derived from an external clock signal in order to compensate for uncertainty and variations in the amount of read clock back timing relative to data flow to achieve a specified read latency. A reset signal is generated at DRAM initialization and starts an first counter, which counts external clock cycles, and is also passed through the slave delay line of the delay lock loop to start a second counter. The counters run continuously once started and the difference in count values represent the internal delay as an external clock signal passes through the delay lock loop to produce an internal read clock signal. An internal read latency value is used to offset either counter to account for the internal read latency of the DRAM circuit. Once the non-offset counter is equivalent to the offset counter, read data is placed on an output line with a specified read latency and synchronized with the external read clock.

摘要翻译： 一种用于管理从外部时钟信号导出的内部时钟信号的可变定时的方法和装置，以便补偿相对于数据流的读取时钟反馈时序的不确定性和变化，以实现指定的读取等待时间。 在DRAM初始化时产生复位信号，并启动计数外部时钟周期的第一计数器，并且还通过延迟锁定循环的从延迟线来启动第二个计数器。 一旦启动，计数器连续运行，当外部时钟信号通过延迟锁定环路以产生内部读取时钟信号时，计数值的差异代表内部延迟。 内部读延迟值用于抵消DRAM电路的内部读延迟。 一旦非偏移计数器等效于偏移计数器，读取数据将放置在具有指定读延迟并与外部读时钟同步的输出线上。

公开(公告)号：US07269094B2

公开(公告)日：2007-09-11

申请号：US11352131

申请日：2006-02-10

申请人： Feng Lin ,  Brent Keeth ,  Brian Johnson ,  Seong-hoon Lee

发明人： Feng Lin ,  Brent Keeth ,  Brian Johnson ,  Seong-hoon Lee

IPC分类号： G11C8/00

CPC分类号： G11C7/109 ,  G11C7/1006 ,  G11C7/1078 ,  G11C7/1087 ,  G11C7/22 ,  G11C7/222

摘要： A memory system couples command, address or write data signals from a memory controller to a memory device and read data signals from the memory device to the memory controller. A respective strobe generator circuit in each of the memory controller and the memory device each generates an in-phase strobe signal and a quadrature strobe signal. Command, address or write data signals stored in respective output latches in the memory controller are clocked by the in-phase signals from the internal strobe generator circuit. These command, address or write data signals are latched into input latches in the memory device by the quadrature strobe signal coupled from the memory controller to the memory device. In substantially the same manner, read data signals are coupled from the memory device to the memory controller using the in-phase and quadrature strobe signals generated by the internal strobe generator circuit.

公开(公告)号：US20060126406A1

公开(公告)日：2006-06-15

申请号：US11352142

申请日：2006-02-10

申请人： Feng Lin ,  Brent Keeth ,  Brian Johnson ,  Seong-hoon Lee

发明人： Feng Lin ,  Brent Keeth ,  Brian Johnson ,  Seong-hoon Lee

IPC分类号： G11C7/00

CPC分类号： G11C7/109 ,  G11C7/1006 ,  G11C7/1078 ,  G11C7/1087 ,  G11C7/22 ,  G11C7/222

摘要： A memory system couples command, address or write data signals from a memory controller to a memory device and read data signals from the memory device to the memory controller. A respective strobe generator circuit in each of the memory controller and the memory device each generates an in-phase strobe signal and a quadrature strobe signal. Command, address or write data signals stored in respective output latches in the memory controller are clocked by the in-phase signals from the internal strobe generator circuit. These command, address or write data signals are latched into input latches in the memory device by the quadrature strobe signal coupled from the memory controller to the memory device. In substantially the same manner, read data signals are coupled from the memory device to the memory controller using the in-phase and quadrature strobe signals generated by the internal strobe generator circuit.

公开(公告)号：US06762974B1

公开(公告)日：2004-07-13

申请号：US10389807

申请日：2003-03-18

申请人： Brian Johnson ,  Brent Keeth ,  Feng Lin

发明人： Brian Johnson ,  Brent Keeth ,  Feng Lin

IPC分类号： G11C800

CPC分类号： G11C7/222 ,  G11C7/1072 ,  G11C11/4076

摘要： A method and apparatus for managing the variable timing of internal clock signals derived from an external clock signal in order to compensate for uncertainty and variations in the amount of read clock back timing relative to data flow to achieve a specified read latency. A reset signal is generated at DRAM initialization and starts an first counter, which counts external clock cycles, and is also passed through the slave delay line of the delay lock loop to start a second counter. The counters run continuously once started and the difference in count values represent the internal delay as an external clock signal passes through the delay lock loop to produce an internal read clock signal. An internal read latency value is used to offset either counter to account for the internal read latency of the DRAM circuit. Once the non-offset counter is equivalent to the offset counter, read data is placed on an output line with a specified read latency and synchronized with the external read clock.

摘要翻译： 一种用于管理从外部时钟信号导出的内部时钟信号的可变定时的方法和装置，以便补偿相对于数据流的读取时钟反馈时序的不确定性和变化，以实现指定的读取等待时间。 在DRAM初始化时产生复位信号，并启动计数外部时钟周期的第一计数器，并且还通过延迟锁定循环的从延迟线来启动第二个计数器。 一旦启动，计数器连续运行，当外部时钟信号通过延迟锁定环路以产生内部读取时钟信号时，计数值的差异代表内部延迟。 内部读延迟值用于抵消DRAM电路的内部读延迟。 一旦非偏移计数器等效于偏移计数器，读取数据将放置在具有指定读延迟并与外部读时钟同步的输出线上。

公开(公告)号：US06687185B1

公开(公告)日：2004-02-03

申请号：US10230221

申请日：2002-08-29

申请人： Brent Keeth ,  Brian Johnson ,  Feng Lin

发明人： Brent Keeth ,  Brian Johnson ,  Feng Lin

IPC分类号： G11C800

CPC分类号： G11C7/106 ,  G11C7/1051 ,  G11C7/1066 ,  G11C11/4076 ,  G11C2207/2281

摘要： An apparatus and method for coordinating the variable timing of internal clock signals derived from an external clock signal to ensure that read data and a read clock used to latch the read data arrive at the data latch in synchronism and with a specified read latency. A read clock is produced from the external clock signal in a delay lock loop circuit and a start signal, produced in response to a read command, is passed through a delay circuit slaved with the delay lock loop so that the read clock signal and a delayed start signal are subject to the same internal timing variations. The delayed start signal is used to thereby control the output of read data by the read clock signal.

摘要翻译： 一种用于协调从外部时钟信号导出的内部时钟信号的可变定时的装置和方法，以确保读取数据和用于锁存读取数据的读取时钟同步并以指定的读取延迟到达数据锁存器。 在延迟锁定环路电路中，从外部时钟信号产生读时钟，并且响应于读命令产生的起始信号通过与延迟锁定环相对应的延迟电路，使得读时钟信号和延迟 启动信号受到相同的内部时序变化。 延迟启动信号用于通过读时钟信号控制读数据的输出。

公开(公告)号：US07251194B2

公开(公告)日：2007-07-31

申请号：US11352078

申请日：2006-02-10

申请人： Feng Lin ,  Brent Keeth ,  Brian Johnson ,  Seong-hoon Lee

发明人： Feng Lin ,  Brent Keeth ,  Brian Johnson ,  Seong-hoon Lee

IPC分类号： G11C8/18

CPC分类号： G11C7/109 ,  G11C7/1006 ,  G11C7/1078 ,  G11C7/1087 ,  G11C7/22 ,  G11C7/222

摘要： A memory system couples command, address or write data signals from a memory controller to a memory device and read data signals from the memory device to the memory controller. A respective strobe generator circuit in each of the memory controller and the memory device each generates an in-phase strobe signal and a quadrature strobe signal. Command, address or write data signals stored in respective output latches in the memory controller are clocked by the in-phase signals from the internal strobe generator circuit. These command, address or write data signals are latched into input latches in the memory device by the quadrature strobe signal coupled from the memory controller to the memory device. In substantially the same manner, read data signals are coupled from the memory device to the memory controller using the in-phase and quadrature strobe signals generated by the internal strobe generator circuit.

摘要翻译： 存储器系统将命令，地址或写入数据信号从存储器控制器耦合到存储器件，并将数据信号从存储器件读取到存储器控制器。 每个存储器控制器和存储器件中的相应选通发生器电路都产生同相选通信号和正交选通信号。 存储在存储器控制器中的相应输出锁存器中的命令，地址或写入数据信号由来自内部选通发生器电路的同相信号计时。 这些命令，地址或写入数据信号通过从存储器控制器耦合到存储器件的正交选通信号而被锁存在存储器件中的输入锁存器中。 以基本相同的方式，使用由内部选通发生器电路产生的同相和正交选通信号，将读取的数据信号从存储器件耦合到存储器控制器。

公开(公告)号：US07126874B2

公开(公告)日：2006-10-24

申请号：US10931472

申请日：2004-08-31

申请人： Feng Lin ,  Brent Keeth ,  Brian Johnson ,  Seong-hoon Lee

发明人： Feng Lin ,  Brent Keeth ,  Brian Johnson ,  Seong-hoon Lee

IPC分类号： G11C8/00

CPC分类号： G11C7/109 ,  G11C7/1006 ,  G11C7/1078 ,  G11C7/1087 ,  G11C7/22 ,  G11C7/222

摘要： A memory system couples command, address or write data signals from a memory controller to a memory device and read data signals from the memory device to the memory controller. A respective strobe generator circuit in each of the memory controller and the memory device each generates an in-phase strobe signal and a quadrature strobe signal. Command, address or write data signals stored in respective output latches in the memory controller are clocked by the in-phase signals from the internal strobe generator circuit. These command, address or write data signals are latched into input latches in the memory device by the quadrature strobe signal coupled from the memory controller to the memory device. In substantially the same manner, read data signals are coupled from the memory device to the memory controller using the in-phase and quadrature strobe signals generated by the internal strobe generator circuit.

摘要翻译： 存储器系统将命令，地址或写入数据信号从存储器控制器耦合到存储器件，并将数据信号从存储器件读取到存储器控制器。 每个存储器控制器和存储器件中的相应选通发生器电路都产生同相选通信号和正交选通信号。 存储在存储器控制器中的相应输出锁存器中的命令，地址或写入数据信号由来自内部选通发生器电路的同相信号计时。 这些命令，地址或写入数据信号通过从存储器控制器耦合到存储器件的正交选通信号而被锁存在存储器件中的输入锁存器中。 以基本相同的方式，使用由内部选通发生器电路产生的同相和正交选通信号，将读取的数据信号从存储器件耦合到存储器控制器。

公开(公告)号：US20060140023A1

公开(公告)日：2006-06-29

申请号：US11352078

申请日：2006-02-10

申请人： Feng Lin ,  Brent Keeth ,  Brian Johnson ,  Seong-hoon Lee

发明人： Feng Lin ,  Brent Keeth ,  Brian Johnson ,  Seong-hoon Lee

IPC分类号： G11C7/00

CPC分类号： G11C7/109 ,  G11C7/1006 ,  G11C7/1078 ,  G11C7/1087 ,  G11C7/22 ,  G11C7/222

摘要： A memory system couples command, address or write data signals from a memory controller to a memory device and read data signals from the memory device to the memory controller. A respective strobe generator circuit in each of the memory controller and the memory device each generates an in-phase strobe signal and a quadrature strobe signal. Command, address or write data signals stored in respective output latches in the memory controller are clocked by the in-phase signals from the internal strobe generator circuit. These command, address or write data signals are latched into input latches in the memory device by the quadrature strobe signal coupled from the memory controller to the memory device. In substantially the same manner, read data signals are coupled from the memory device to the memory controller using the in-phase and quadrature strobe signals generated by the internal strobe generator circuit.

公开(公告)号：US20060133165A1

公开(公告)日：2006-06-22

申请号：US11351836

申请日：2006-02-10

申请人： Feng Lin ,  Brent Keeth ,  Brian Johnson ,  Seong-hoon Lee

发明人： Feng Lin ,  Brent Keeth ,  Brian Johnson ,  Seong-hoon Lee

IPC分类号： G11C7/00

CPC分类号： G11C7/109 ,  G11C7/1006 ,  G11C7/1078 ,  G11C7/1087 ,  G11C7/22 ,  G11C7/222

摘要： A memory system couples command, address or write data signals from a memory controller to a memory device and read data signals from the memory device to the memory controller. A respective strobe generator circuit in each of the memory controller and the memory device each generates an in-phase strobe signal and a quadrature strobe signal. Command, address or write data signals stored in respective output latches in the memory controller are clocked by the in-phase signals from the internal strobe generator circuit. These command, address or write data signals are latched into input latches in the memory device by the quadrature strobe signal coupled from the memory controller to the memory device. In substantially the same manner, read data signals are coupled from the memory device to the memory controller using the in-phase and quadrature strobe signals generated by the internal strobe generator circuit.