公开(公告)号：US06534417B2

公开(公告)日：2003-03-18

申请号：US10126851

申请日：2002-04-19

Applicant: Brigitte C. Stoehr ,  Michael D. Welch

Inventor： Brigitte C. Stoehr ,  Michael D. Welch

IPC: H01L2100

CPC classification number: H01J37/321 ,  G03F1/30 ,  H01J2237/334 ,  H01L21/31116

Abstract: A process is provided for etching a silicon based material in a substrate, such as a photomask, to form features with straight sidewalls, flat bottoms, and high profile angles between the sidewalls and bottom, and minimizing the formation of polymer deposits on the substrate. In the etching process, the substrate is positioned in a processing chamber, a processing gas comprising a fluorocarbon, which advantageously is a hydrogen free fluorocarbon, is introduced into the processing chamber, wherein the substrate is maintained at a reduced temperature, and the processing gas is excited into a plasma state at a reduced power level to etch the silicon based material of the substrate. The processing gas may further comprise an inert gas, such as argon.

公开(公告)号：US06391790B1

公开(公告)日：2002-05-21

申请号：US09625343

申请日：2000-07-25

Applicant: Brigitte C. Stoehr ,  Michael D. Welch

Inventor： Brigitte C. Stoehr ,  Michael D. Welch

IPC: H01L2100

CPC classification number: H01J37/321 ,  G03F1/30 ,  H01J2237/334 ,  H01L21/31116

Abstract: A process is provided for etching a silicon based material in a substrate, such as a photomask, to form features with straight sidewalls, flat bottoms, and high profile angles between the sidewalls and bottom, and minimizing the formation of polymer deposits on the substrate. In the etching process, the substrate is positioned in a processing chamber, a processing gas comprising a fluorocarbon, which advantageously is a hydrogen free fluorocarbon, is introduced into the processing chamber, wherein the substrate is maintained at a reduced temperature, and the processing gas is excited into a plasma state at a reduced power level to etch the silicon based material of the substrate. The processing gas may further comprise an inert gas, such as argon.

Abstract translation: 提供了一种用于在诸如光掩模的基底中蚀刻硅基材料以形成具有直的侧壁，平坦的底部以及在侧壁和底部之间的高轮廓角度的特征并且使基底上的聚合物沉积物的形成最小化的方法。 在蚀刻工艺中，将基板定位在处理室中，将含氟碳氟化合物的处理气体（有利地是无氢氟碳化合物）引入处理室，其中基板保持在降低的温度，并且处理气体 在降低的功率水平下被激发成等离子体状态以蚀刻基板的硅基材料。 处理气体还可以包括惰性气体，例如氩气。

公开(公告)号：US07115523B2

公开(公告)日：2006-10-03

申请号：US10391071

申请日：2003-03-18

Applicant: Brigitte C. Stoehr ,  Michael D. Welch ,  Melisa J. Buie

Inventor： Brigitte C. Stoehr ,  Michael D. Welch ,  Melisa J. Buie

IPC: H01L21/302

CPC classification number: H01J37/321 ,  G03F1/30 ,  H01J2237/334 ,  H01L21/31116

Abstract: A process is provided for etching a silicon based material in a substrate, such as a photomask, to form features with straight sidewalls, flat bottoms, and high profile angles between the sidewalls and bottom, and minimizing the formation of polymer deposits on the substrate. In the etching process, the substrate is positioned in a processing chamber, a processing gas comprising a fluorocarbon, which advantageously is a hydrogen free fluorocarbon, is introduced into the processing chamber, wherein the substrate is maintained at a reduced temperature, and the processing gas is excited into a plasma state at a reduced power level to etch the silicon based material of the substrate. The processing gas may further comprise an inert gas, such as argon.

公开(公告)号：US07018934B2

公开(公告)日：2006-03-28

申请号：US10235223

申请日：2002-09-04

Applicant: Melisa J. Buie ,  Brigitte C. Stoehr

Inventor： Melisa J. Buie ,  Brigitte C. Stoehr

IPC: H01L21/302

CPC classification number: H01J37/321 ,  C23F4/00 ,  G03F1/80 ,  H01L21/32136

Abstract: Method and apparatus for etching a metal layer disposed on a substrate, such as a photomask, are provided. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising (i) hydrogen chloride, (ii) an oxygen containing gas, (iii) another chlorine containing gas, and optionally, (iv) an inert gas into the processing chamber, wherein the substrate is maintained at a reduced temperature, and the processing gas is excited into a plasma state at a reduced power level to etch exposed portions of the metal layer disposed on the substrate.

公开(公告)号：US07371485B2

公开(公告)日：2008-05-13

申请号：US11264189

申请日：2005-10-31

Applicant: Cynthia B. Brooks ,  Melisa J. Buie ,  Brigitte C. Stoehr

Inventor： Cynthia B. Brooks ,  Melisa J. Buie ,  Brigitte C. Stoehr

IPC: G03F9/00 ,  G03C5/00

CPC classification number: G03F1/80 ,  C23F4/00 ,  G03F1/50

Abstract: Method and apparatus for etching a metal layer disposed on a substrate, such as a photolithographic reticle, are provided. In one aspect, a method is provided for processing a photolithographic reticle including positioning the reticle on a support member in a processing chamber, wherein the reticle comprises a metal photomask layer formed on a silicon-based substrate, and a patterned resist material deposited on the silicon-based substrate, etching the substrate with an oxygen-free processing gas, and then etching the substrate with an oxygen containing processing gas.

Abstract translation: 提供了用于蚀刻设置在诸如光刻掩模之类的基板上的金属层的方法和设备。 在一个方面，提供了一种用于处理光刻掩模版的方法，包括将掩模版定位在处理室中的支撑构件上，其中所述掩模版包括形成在硅基衬底上的金属光掩模层和沉积在所述衬底上的图案化抗蚀剂材料 硅基衬底，用无氧处理气体蚀刻衬底，然后用含氧处理气体蚀刻衬底。

公开(公告)号：US06960413B2

公开(公告)日：2005-11-01

申请号：US10803867

申请日：2004-03-18

Applicant: Cynthia B. Brooks ,  Melisa J. Buie ,  Brigitte C. Stoehr

Inventor： Cynthia B. Brooks ,  Melisa J. Buie ,  Brigitte C. Stoehr

IPC: A61N5/00 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  C23F4/00 ,  G03C5/00 ,  G03F1/00 ,  G03F1/80 ,  G03F9/00 ,  G21G5/00

CPC classification number: G03F1/80 ,  C23F4/00 ,  G03F1/50

Abstract: Method and apparatus for etching a metal layer disposed on a substrate, such as a photolithographic reticle, are provided. In one aspect, a method is provided for processing a photolithographic reticle including positioning the reticle on a support member in a processing chamber, wherein the reticle comprises a metal photomask layer formed on a silicon-based substrate, and a patterned resist material deposited on the silicon-based substrate, etching the substrate with an oxygen-free processing gas, and then etching the substrate with an oxygen containing processing gas.

Abstract translation: 提供了用于蚀刻设置在诸如光刻掩模之类的基板上的金属层的方法和设备。 在一个方面，提供了一种用于处理光刻掩模版的方法，包括将掩模版定位在处理室中的支撑构件上，其中所述掩模版包括形成在硅基衬底上的金属光掩模层和沉积在所述衬底上的图案化抗蚀剂材料 硅基衬底，用无氧处理气体蚀刻衬底，然后用含氧处理气体蚀刻衬底。