公开(公告)号：US11694867B2

公开(公告)日：2023-07-04

申请号：US17411197

申请日：2021-08-25

申请人： Bruker Nano, Inc.

发明人： Joseph S. Fragala ,  Xing Zhao

IPC分类号： H01J5/18 ,  H01J9/24 ,  H01J9/233 ,  H01J35/18

CPC分类号： H01J9/233 ,  H01J5/18 ,  H01J9/24 ,  H01J35/18 ,  H01J2235/18

摘要： A method for producing a radiation window includes patterning a photo resist structure onto a double-sided silicon wafer, plasma etching the silicon wafer to create an etched silicon wafer having a silicon supporting structure etched upon a first side of the double-sided silicon wafer, applying a silicon nitride thin film to the etched silicon wafer, patterning a photo resist structure and plasma etching a second side of the double-sided silicon wafer to create an initial window in the silicon nitride thin film, and wet etching the second side of the double-sided silicon wafer to release the silicon nitride thin film and supporting structure from the portion of the double-sided silicon wafer defined by the initial window.

公开(公告)号：US20220068635A1

公开(公告)日：2022-03-03

申请号：US17411197

申请日：2021-08-25

申请人： Bruker Nano, Inc.

发明人： Joseph S. Fragala ,  Xing Zhao

IPC分类号： H01L21/027 ,  H01L21/3065 ,  H01J9/233

摘要： A method for producing a radiation window includes patterning a photo resist structure onto a double-sided silicon wafer, plasma etching the silicon wafer to create an etched silicon wafer having a silicon supporting structure etched upon a first side of the double-sided silicon wafer, applying a silicon nitride thin film to the etched silicon wafer, patterning a photo resist structure and plasma etching a second side of the double-sided silicon wafer to create an initial window in the silicon nitride thin film, and wet etching the second side of the double-sided silicon wafer to release the silicon nitride thin film and supporting structure from the portion of the double-sided silicon wafer defined by the initial window.