公开(公告)号：US20120220681A1

公开(公告)日：2012-08-30

申请号：US13403298

申请日：2012-02-23

Applicant: Byeong-Soo BAE ,  SeungCheol YANG

Inventor： Byeong-Soo BAE ,  SeungCheol YANG

IPC: C08G77/18 ,  C08G77/06

CPC classification number: C08G59/3281 ,  C08G59/68 ,  C08G65/105 ,  C08G65/18 ,  C08K5/1525 ,  C08L83/06

Abstract: Provided is a photo-curable transparent resin in which an oxetane monomer for promotion of photo-curing, control of viscosity, and improvement of physical properties is mixed with a photo-cationically polymerizable cyclo-aliphatic epoxy group-containing oligosiloxane resin prepared by a sol-gel reaction. The photo-cationically polymerizable photo-curable transparent resin added with the oxetane monomer provides a cured product having high curing density and retaining excellent mechanical properties, thermal-mechanical properties, and electrical properties.

Abstract translation: 提供一种可光固化的透明树脂，其中用于促进光固化，粘度控制和物理性能改善的氧杂环丁烷单体与通过溶胶制备的光阳离子聚合的含环脂基环氧基的低聚硅氧烷树脂混合 凝胶反应。 加入氧杂环丁烷单体的光阳离子聚合光固化透明树脂提供了具有高固化密度和保持优异的机械性能，热机械性能和电性能的固化产物。

公开(公告)号：US20120032165A1

公开(公告)日：2012-02-09

申请号：US13198232

申请日：2011-08-04

Applicant: Byeong-Soo BAE ,  Jun-Hyuck JEON

Inventor： Byeong-Soo BAE ,  Jun-Hyuck JEON

IPC: H01L29/786 ,  H01B1/20 ,  H01B1/06 ,  H01B1/12 ,  H01L29/26 ,  H01L21/36

CPC classification number: H01L29/7869 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02573 ,  H01L21/02628

Abstract: Provided are an aqueous solution composition for fluorine doped metal oxide semiconductor, a method for manufacturing a fluorine doped metal oxide semiconductor using the same, and a thin film transistor including the same. The aqueous solution composition for fluorine doped metal oxide semiconductor includes: a fluorine compound precursor made of one or two or more selected from the group consisting of a metal compound containing fluorine and an organic material containing fluorine; and an aqueous solution containing water or catalyst. The method for manufacturing a fluorine doped metal oxide semiconductor, includes: preparing an aqueous solution composition for fluorine doped metal oxide semiconductor, coating a substrate with the aqueous solution composition; and performing heat treatment on the coated substrate to form the fluorine doped metal oxide semiconductor. The thin film transistor of the present invention can exhibit excellent electrical properties even at a temperature for low-temperature annealing, as compared with the metal oxide semiconductor thin film transistor of the related art.

Abstract translation: 提供了一种用于氟掺杂金属氧化物半导体的水溶液组合物，使用该水溶液组合物的氟掺杂金属氧化物半导体的制造方法以及包含该掺杂金属氧化物半导体的薄膜晶体管。 用于掺杂氟的金属氧化物半导体的水溶液组合物包括：由选自含氟金属化合物和含氟有机材料的一种或两种以上组成的氟化合物前体; 和含有水或催化剂的水溶液。 氟掺杂金属氧化物半导体的制造方法，包括：制备掺杂氟的金属氧化物半导体的水溶液组合物，用所述水溶液组合物涂布基材; 对涂布的基板进行热处理，形成掺氟金属氧化物半导体。 与现有技术的金属氧化物半导体薄膜晶体管相比，本发明的薄膜晶体管即使在低温退火的温度下也能表现出优异的电性能。

公开(公告)号：US20100178478A1

公开(公告)日：2010-07-15

申请号：US12617357

申请日：2009-11-12

Applicant: Byeong-Soo BAE ,  Jungho JIN ,  Seung Cheol YANG ,  Ji Hoon KO

Inventor： Byeong-Soo BAE ,  Jungho JIN ,  Seung Cheol YANG ,  Ji Hoon KO

IPC: B32B7/02 ,  C08L83/06

CPC classification number: C08K3/40 ,  H01L29/78603 ,  Y10T428/23986 ,  Y10T428/24942 ,  Y10T428/2933 ,  Y10T428/2971 ,  Y10T428/31612 ,  Y10T428/31663 ,  Y10T442/2992 ,  C08L83/04

Abstract: Provided is a non-hydrolytic transparent composite composition having excellent transparency and heat resistance, and a low thermal expansion coefficient. Particularly, the transparent composite composition includes a glass filler dispersed in a crosslinked transparent resin produced by a non-hydrolytic reaction. The non-hydrolytic transparent siloxane resin is a resin having Si—O (siloxane) bonds, a resin having at least one kind of heterometal bonds, including Si—O bonds, or the resin further containing other ingredients. When the transparent siloxane resin produced by a non-hydrolytic reaction forms a composite in combination with the glass filler, the composite realizes high transparency and heat resistance, as well as a low thermal expansion coefficient. Therefore, the transparent composite composition is useful as a substrate for thin film transistor (TFT) devices, display devices and optical devices.

Abstract translation: 本发明提供透明性，耐热性优异，热膨胀系数低的非水解透明性复合组合物。 特别地，透明复合组合物包括分散在通过非水解反应制备的交联透明树脂中的玻璃填料。 非水解性透明硅氧烷树脂是具有Si-O（硅氧烷）键的树脂，具有至少一种包含Si-O键的异金属键的树脂，或还含有其它成分的树脂。 当通过非水解反应生成的透明硅氧烷树脂与玻璃填料组合形成复合物时，该复合物实现了高透明度和耐热性以及低的热膨胀系数。 因此，透明复合组合物可用作薄膜晶体管（TFT）器件，显示器件和光学器件的衬底。