公开(公告)号：US20070231977A1

公开(公告)日：2007-10-04

申请号：US11760869

申请日：2007-06-11

申请人： Byoung-Deog CHOI ,  Sung-Sik Bae ,  Won-Sik Kim

发明人： Byoung-Deog CHOI ,  Sung-Sik Bae ,  Won-Sik Kim

IPC分类号： H01L21/84

CPC分类号： H01L27/12 ,  H01L29/78615 ,  H01L29/78639 ,  H01L29/78675

摘要： A method of fabricating a thin film transistor includes forming an active layer on an insulating substrate; forming a gate insulation film on the insulating substrate; forming source, drain, and body contact regions which are separated by a channel region in the active layer; forming a gate on the gate insulation film; forming an interlayer insulation film on the insulating substrate; and forming source and drain electrodes electrically connected with the source and drain regions, respectively, wherein a voltage is applied to the channel region of the active layer through the body contact region, and the body contact region is connected to the source or drain electrode.

摘要翻译： 制造薄膜晶体管的方法包括在绝缘基板上形成有源层; 在绝缘基板上形成栅极绝缘膜; 形成由有源层中的沟道区分隔的源极，漏极和体接触区域; 在栅极绝缘膜上形成栅极; 在绝缘基板上形成层间绝缘膜; 以及分别形成与源极和漏极区域电连接的源极和漏极，其中电压通过本体接触区域施加到有源层的沟道区域，并且主体接触区域连接到源极或漏极电极。

公开(公告)号：US07274037B2

公开(公告)日：2007-09-25

申请号：US10827326

申请日：2004-04-20

申请人： Byoung-Deog Choi ,  Sung-Sik Bae ,  Won-Sik Kim

发明人： Byoung-Deog Choi ,  Sung-Sik Bae ,  Won-Sik Kim

IPC分类号： H01L29/04

CPC分类号： H01L27/12 ,  H01L29/78615 ,  H01L29/78639 ,  H01L29/78675

摘要： A thin film transistor including an active layer formed on an insulating substrate and having channel, source, and drain regions formed therein, wherein a voltage is applied to the channel region to discharge hot carriers generated in the channel region.

摘要翻译： 一种薄膜晶体管，包括形成在绝缘基板上的有源层，其中形成有沟道，源极和漏极区，其中电压被施加到沟道区以排放在沟道区中产生的热载流子。

公开(公告)号：US08652885B2

公开(公告)日：2014-02-18

申请号：US11760869

申请日：2007-06-11

申请人： Byoung-Deog Choi ,  Sung-Sik Bae ,  Won-Sik Kim

发明人： Byoung-Deog Choi ,  Sung-Sik Bae ,  Won-Sik Kim

IPC分类号： H01L21/00

CPC分类号： H01L27/12 ,  H01L29/78615 ,  H01L29/78639 ,  H01L29/78675

摘要： A method of fabricating a thin film transistor includes forming an active layer on an insulating substrate; forming a gate insulation film on the insulating substrate; forming source, drain, and body contact regions which are separated by a channel region in the active layer; forming a gate on the gate insulation film; forming an interlayer insulation film on the insulating substrate; and forming source and drain electrodes electrically connected with the source and drain regions, respectively, wherein a voltage is applied to the channel region of the active layer through the body contact region, and the body contact region is connected to the source or drain electrode.

摘要翻译： 制造薄膜晶体管的方法包括在绝缘基板上形成有源层; 在绝缘基板上形成栅极绝缘膜; 形成由有源层中的沟道区分隔的源极，漏极和体接触区域; 在栅极绝缘膜上形成栅极; 在绝缘基板上形成层间绝缘膜; 以及分别形成与源极和漏极区域电连接的源极和漏极，其中电压通过本体接触区域施加到有源层的沟道区域，并且主体接触区域连接到源极或漏极电极。

公开(公告)号：US08624298B2

公开(公告)日：2014-01-07

申请号：US11760864

申请日：2007-06-11

申请人： Byoung-Deog Choi ,  Sung-Sik Bae ,  Won-Sik Kim

发明人： Byoung-Deog Choi ,  Sung-Sik Bae ,  Won-Sik Kim

IPC分类号： H01L23/52

CPC分类号： H01L27/12 ,  H01L29/78615 ,  H01L29/78639 ,  H01L29/78675

摘要： A flat panel display includes a gate line, a data line, and a power supply line and a plurality of pixels connected to the lines, wherein each of the pixels includes a first thin film transistor that includes an active layer having a channel region, a source region, and a drain region and a bias supply layer in contact with the channel region so as to apply a voltage to the channel region of the first thin film transistor, wherein the bias supply layer of the first thin film transistor is connected to the power supply line.

摘要翻译： 平板显示器包括栅极线，数据线，以及连接到线路的电源线和多个像素，其中每个像素包括第一薄膜晶体管，其包括具有沟道区的有源层， 源区域以及与沟道区域接触的漏极区域和偏压供给层，以向第一薄膜晶体管的沟道区域施加电压，其中第一薄膜晶体管的偏置供给层连接到 电源线。

公开(公告)号：US08013337B2

公开(公告)日：2011-09-06

申请号：US11760876

申请日：2007-06-11

申请人： Byoung-Deog Choi ,  Sung-Sik Bae ,  Won-Sik Kim

发明人： Byoung-Deog Choi ,  Sung-Sik Bae ,  Won-Sik Kim

IPC分类号： H01L29/04

CPC分类号： H01L27/12 ,  H01L29/78615 ,  H01L29/78639 ,  H01L29/78675

摘要： A thin film transistor including an active layer formed on an insulating substrate and having channel, source, and drain regions formed therein; a gate electrode formed over the channel region of the active layer; source and drain electrodes respectively formed over the source and drain regions of the active layer; and a body contact region formed in the active layer so that the body contact region is in contact with the channel region and separated from the source and drain regions, wherein a voltage is applied to the channel region through the body contact region, and the body contact region is connected to the source electrode or the drain electrode.

摘要翻译： 1.一种薄膜晶体管，包括形成在绝缘基板上的有源层，其中形成有沟道，源极和漏极区域; 形成在有源层的沟道区上的栅电极; 源极和漏极分别形成在有源层的源极和漏极区域上; 以及形成在所述有源层中的体接触区域，使得所述体接触区域与所述沟道区域接触并且与所述源极区域和漏极区域分离，其中通过所述身体接触区域向所述沟道区域施加电压，并且所述主体 接触区域连接到源电极或漏电极。

公开(公告)号：US20070228398A1

公开(公告)日：2007-10-04

申请号：US11760876

申请日：2007-06-11

申请人： Byoung-Deog CHOI ,  Sung-Sik Bae ,  Won-Sik Kim

发明人： Byoung-Deog CHOI ,  Sung-Sik Bae ,  Won-Sik Kim

IPC分类号： H01L29/68 ,  H01L33/00

CPC分类号： H01L27/12 ,  H01L29/78615 ,  H01L29/78639 ,  H01L29/78675

摘要： A thin film transistor including an active layer formed on an insulating substrate and having channel, source, and drain regions formed therein; a gate electrode formed over the channel region of the active layer; source and drain electrodes respectively formed over the source and drain regions of the active layer; and a body contact region formed in the active layer so that the body contact region is in contact with the channel region and separated from the source and drain regions, wherein a voltage is applied to the channel region through the body contact region, and the body contact region is connected to the source electrode or the drain electrode.

摘要翻译： 1.一种薄膜晶体管，包括形成在绝缘基板上的有源层，其中形成有沟道，源极和漏极区域; 形成在有源层的沟道区上的栅电极; 源极和漏极分别形成在有源层的源极和漏极区域上; 以及形成在所述有源层中的体接触区域，使得所述体接触区域与所述沟道区域接触并且与所述源极区域和漏极区域分离，其中通过所述身体接触区域向所述沟道区域施加电压，并且所述主体 接触区域连接到源电极或漏电极。

公开(公告)号：US07274036B2

公开(公告)日：2007-09-25

申请号：US10910350

申请日：2004-08-04

申请人： Byoung-Deog Choi ,  Won-Sik Kim ,  Myeong-Seob So

发明人： Byoung-Deog Choi ,  Won-Sik Kim ,  Myeong-Seob So

IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L31/00 ,  H01L29/12 ,  H01L29/786 ,  H01L27/01 ,  H01L27/12

CPC分类号： H01L29/78666 ,  H01L27/12 ,  H01L29/783 ,  H01L29/7841 ,  H01L29/78609 ,  H01L29/78675

摘要： A TFT including a gate metallic layer, a body layer doped with a dopant having a first polarity, a source layer and a drain layer doped with a dopant having a second polarity, a semiconductor layer formed between the source layer and the drain layer, and a contact coupling the gate metallic layer and the body layer.

摘要翻译： 一种TFT，包括栅极金属层，掺杂有第一极性的掺杂剂的体层，掺杂有第二极性的掺杂剂的源极层和漏极层，形成在源极层和漏极层之间的半导体层，以及 耦合栅极金属层和主体层的接触。

公开(公告)号：US20050082530A1

公开(公告)日：2005-04-21

申请号：US10959976

申请日：2004-10-08

申请人： Jae-Bon Koo ,  Byoung-Deog Choi ,  Myeong-Seob So ,  Won-Sik Kim

发明人： Jae-Bon Koo ,  Byoung-Deog Choi ,  Myeong-Seob So ,  Won-Sik Kim

IPC分类号： H01L29/786 ,  H01L29/10

CPC分类号： H01L29/78615

摘要： A thin film transistor of the present invention comprises, an active layer formed on an insulating substrate and having a channel region and source/drain regions; a gate electrode formed corresponding to the channel region of the active region; a body contact region separately formed with the source/drain regions in the active layer; source/drain electrodes each connected to the source/drain regions; and a conductive wiring for connecting the body contact region and the gate electrode.

摘要翻译： 本发明的薄膜晶体管包括：形成在绝缘基板上并具有沟道区域和源极/漏极区域的有源层; 形成对应于所述有源区的沟道区的栅电极; 与所述有源层中的源极/漏极区域分开形成的体接触区域; 源极/漏极，各自连接到源极/漏极区; 以及用于连接体接触区域和栅电极的导电布线。

公开(公告)号：US08704305B2

公开(公告)日：2014-04-22

申请号：US10959976

申请日：2004-10-08

申请人： Jae-Bon Koo ,  Byoung-Deog Choi ,  Myeong-Seob So ,  Won-Sik Kim

发明人： Jae-Bon Koo ,  Byoung-Deog Choi ,  Myeong-Seob So ,  Won-Sik Kim

IPC分类号： H01L27/01

CPC分类号： H01L29/78615

摘要： A thin film transistor of the present invention comprises, an active layer formed on an insulating substrate and having a channel region and source/drain regions; a gate electrode formed corresponding to the channel region of the active region; a body contact region separately formed with the source/drain regions in the active layer; source/drain electrodes each connected to the source/drain regions; and a conductive wiring for connecting the body contact region and the gate electrode.

摘要翻译： 本发明的薄膜晶体管包括：形成在绝缘基板上并具有沟道区域和源极/漏极区域的有源层; 形成对应于所述有源区的沟道区的栅电极; 与所述有源层中的源极/漏极区域分开形成的体接触区域; 源极/漏极，各自连接到源极/漏极区; 以及用于连接体接触区域和栅电极的导电布线。

公开(公告)号：US20050035343A1

公开(公告)日：2005-02-17

申请号：US10910350

申请日：2004-08-04

申请人： Byoung-Deog Choi ,  Won-Sik Kim ,  Myeong-Seob So

发明人： Byoung-Deog Choi ,  Won-Sik Kim ,  Myeong-Seob So

IPC分类号： G09F9/30 ,  H01L27/12 ,  H01L27/32 ,  H01L29/78 ,  H01L29/786 ,  H01L29/06

CPC分类号： H01L29/78666 ,  H01L27/12 ,  H01L29/783 ,  H01L29/7841 ,  H01L29/78609 ,  H01L29/78675

摘要： A TFT including a gate metallic layer, a body layer doped with a dopant having a first polarity, a source layer and a drain layer doped with a dopant having a second polarity, a semiconductor layer formed between the source layer and the drain layer, and a contact coupling the gate metallic layer and the body layer.

摘要翻译： 一种TFT，包括栅极金属层，掺杂有第一极性的掺杂剂的体层，掺杂有第二极性的掺杂剂的源极层和漏极层，形成在源极层和漏极层之间的半导体层，以及 耦合栅极金属层和主体层的接触。