公开(公告)号：US08624298B2

公开(公告)日：2014-01-07

申请号：US11760864

申请日：2007-06-11

申请人： Byoung-Deog Choi ,  Sung-Sik Bae ,  Won-Sik Kim

发明人： Byoung-Deog Choi ,  Sung-Sik Bae ,  Won-Sik Kim

IPC分类号： H01L23/52

CPC分类号： H01L27/12 ,  H01L29/78615 ,  H01L29/78639 ,  H01L29/78675

摘要： A flat panel display includes a gate line, a data line, and a power supply line and a plurality of pixels connected to the lines, wherein each of the pixels includes a first thin film transistor that includes an active layer having a channel region, a source region, and a drain region and a bias supply layer in contact with the channel region so as to apply a voltage to the channel region of the first thin film transistor, wherein the bias supply layer of the first thin film transistor is connected to the power supply line.

摘要翻译： 平板显示器包括栅极线，数据线，以及连接到线路的电源线和多个像素，其中每个像素包括第一薄膜晶体管，其包括具有沟道区的有源层， 源区域以及与沟道区域接触的漏极区域和偏压供给层，以向第一薄膜晶体管的沟道区域施加电压，其中第一薄膜晶体管的偏置供给层连接到 电源线。

公开(公告)号：US08013337B2

公开(公告)日：2011-09-06

申请号：US11760876

申请日：2007-06-11

申请人： Byoung-Deog Choi ,  Sung-Sik Bae ,  Won-Sik Kim

发明人： Byoung-Deog Choi ,  Sung-Sik Bae ,  Won-Sik Kim

IPC分类号： H01L29/04

CPC分类号： H01L27/12 ,  H01L29/78615 ,  H01L29/78639 ,  H01L29/78675

摘要： A thin film transistor including an active layer formed on an insulating substrate and having channel, source, and drain regions formed therein; a gate electrode formed over the channel region of the active layer; source and drain electrodes respectively formed over the source and drain regions of the active layer; and a body contact region formed in the active layer so that the body contact region is in contact with the channel region and separated from the source and drain regions, wherein a voltage is applied to the channel region through the body contact region, and the body contact region is connected to the source electrode or the drain electrode.

摘要翻译： 1.一种薄膜晶体管，包括形成在绝缘基板上的有源层，其中形成有沟道，源极和漏极区域; 形成在有源层的沟道区上的栅电极; 源极和漏极分别形成在有源层的源极和漏极区域上; 以及形成在所述有源层中的体接触区域，使得所述体接触区域与所述沟道区域接触并且与所述源极区域和漏极区域分离，其中通过所述身体接触区域向所述沟道区域施加电压，并且所述主体 接触区域连接到源电极或漏电极。

公开(公告)号：US20070228398A1

公开(公告)日：2007-10-04

申请号：US11760876

申请日：2007-06-11

申请人： Byoung-Deog CHOI ,  Sung-Sik Bae ,  Won-Sik Kim

发明人： Byoung-Deog CHOI ,  Sung-Sik Bae ,  Won-Sik Kim

IPC分类号： H01L29/68 ,  H01L33/00

CPC分类号： H01L27/12 ,  H01L29/78615 ,  H01L29/78639 ,  H01L29/78675

摘要： A thin film transistor including an active layer formed on an insulating substrate and having channel, source, and drain regions formed therein; a gate electrode formed over the channel region of the active layer; source and drain electrodes respectively formed over the source and drain regions of the active layer; and a body contact region formed in the active layer so that the body contact region is in contact with the channel region and separated from the source and drain regions, wherein a voltage is applied to the channel region through the body contact region, and the body contact region is connected to the source electrode or the drain electrode.

摘要翻译： 1.一种薄膜晶体管，包括形成在绝缘基板上的有源层，其中形成有沟道，源极和漏极区域; 形成在有源层的沟道区上的栅电极; 源极和漏极分别形成在有源层的源极和漏极区域上; 以及形成在所述有源层中的体接触区域，使得所述体接触区域与所述沟道区域接触并且与所述源极区域和漏极区域分离，其中通过所述身体接触区域向所述沟道区域施加电压，并且所述主体 接触区域连接到源电极或漏电极。

公开(公告)号：US06894737B2

公开(公告)日：2005-05-17

申请号：US09859681

申请日：2001-09-24

申请人： Sung-Sik Bae

发明人： Sung-Sik Bae

IPC分类号： G02F1/1333 ,  G02F1/1339 ,  G02F1/1362 ,  G02F1/136

CPC分类号： G02F1/1339 ,  G02F1/136227 ,  G02F2001/133357

摘要： A liquid crystal display having a substrate includes a plurality of gate lines extended from each gate on the substrate, a gate insulating layer on the substrate including the gate lines, a plurality of data lines arranged to be perpendicular to the gate lines, a passivation layer over the data lines and the gate insulation layer, a plurality of etching holes in the passivation layer and the gate insulating layer, wherein the gate insulating layer within the etching holes has at least one concave and convex portions, and a plurality of seal pattern lines in the etching holes.

摘要翻译： 具有衬底的液晶显示器包括从衬底上的每个栅极延伸的多条栅极线，在包括栅极线的衬底上的栅极绝缘层，与栅极线垂直的多条数据线，钝化层 在数据线和栅极绝缘层上，在钝化层和栅极绝缘层中的多个蚀刻孔，其中蚀刻孔内的栅极绝缘层具有至少一个凹凸部分和多个密封图案线 在蚀刻孔中。

公开(公告)号：US06458613B1

公开(公告)日：2002-10-01

申请号：US09184825

申请日：1998-11-02

申请人： Sung Sik Bae

发明人： Sung Sik Bae

IPC分类号： H01L2100

CPC分类号： H01L29/66765 ,  G02F1/136227 ,  H01L29/4908

摘要： An etching method for manufacturing a liquid crystal display having TFTs, gate bus lines, data bus lines which include a refractory metal such as Mo, Ta, Ti, MoSi, TaSi or TiSi, and a passivation layer covering such layers, is such that refractory metal is not damaged by an etchant used for patterning the passivation layer. The method includes forming a passivation layer covering the switching element, the gate bus line and the data bus line on the substrate, forming a patterning layer on the passivation layer using a photo-resist wherein the patterning layer has open portions exposing some portions of the passivation layer on the switching element and a start portion of the gate and data bus lines, and removing the exposed portions of the passivation layer using an etching gas including CF4 and H2 gases. A mixing ratio of the H2 gas to the CF4 gas is varied and dependent on the area of the portion of the passivation layer to be removed and is preferably about 1% to about 20%.

摘要翻译： 用于制造具有TFT，栅极总线，包括诸如Mo，Ta，Ti，MoSi，TaSi或TiSi的难熔金属的数据总线的液晶显示器的蚀刻方法以及覆盖这种层的钝化层是这样的：耐火材料 用于图案化钝化层的蚀刻剂不会损坏金属。 该方法包括在衬底上形成覆盖开关元件，栅极总线和数据总线的钝化层，使用光致抗蚀剂在钝化层上形成图案化层，其中图案化层具有暴露部分的开放部分 开关元件上的钝化层和栅极和数据总线的起始部分，以及使用包括CF 4和H 2气体的蚀刻气体去除钝化层的暴露部分。 H2气体与CF4气体的混合比例变化并且取决于待除去的钝化层部分的面积，优选为约1％至约20％。

公开(公告)号：US07274037B2

公开(公告)日：2007-09-25

申请号：US10827326

申请日：2004-04-20

申请人： Byoung-Deog Choi ,  Sung-Sik Bae ,  Won-Sik Kim

发明人： Byoung-Deog Choi ,  Sung-Sik Bae ,  Won-Sik Kim

IPC分类号： H01L29/04

CPC分类号： H01L27/12 ,  H01L29/78615 ,  H01L29/78639 ,  H01L29/78675

摘要： A thin film transistor including an active layer formed on an insulating substrate and having channel, source, and drain regions formed therein, wherein a voltage is applied to the channel region to discharge hot carriers generated in the channel region.

摘要翻译： 一种薄膜晶体管，包括形成在绝缘基板上的有源层，其中形成有沟道，源极和漏极区，其中电压被施加到沟道区以排放在沟道区中产生的热载流子。

公开(公告)号：US20050191782A1

公开(公告)日：2005-09-01

申请号：US11060574

申请日：2005-02-17

申请人： Tae-Hoon Yang ,  Kyu-Hwan Choi ,  Sung-Sik Bae

发明人： Tae-Hoon Yang ,  Kyu-Hwan Choi ,  Sung-Sik Bae

IPC分类号： H01L21/00 ,  H01L21/336 ,  H01L21/84 ,  H01L29/786

CPC分类号： H01L29/66757 ,  H01L29/78621

摘要： A PMOS thin film transistor including an LDD region may be fabricated by implanting an ion dose at a specific concentration in order to form the LDD region with a certain range of sheet resistance at both ends of a gate electrode of the PMOS thin film transistor. A buffer layer, an active layer, the gate insulating layer and a gate electrode may be sequentially formed on the substrate of the transistor.

摘要翻译： 可以通过以特定浓度注入离子剂量来形成包括LDD区的PMOS薄膜晶体管，以便在PMOS薄膜晶体管的栅电极的两端形成具有一定范围的薄层电阻的LDD区。 可以在晶体管的衬底上依次形成缓冲层，有源层，栅极绝缘层和栅电极。

公开(公告)号：US06856361B2

公开(公告)日：2005-02-15

申请号：US10006896

申请日：2001-12-10

申请人： Woong-Kwon Kim ,  Jae-Beom Choi ,  Sung-Sik Bae ,  Kwang-Jo Hwang

发明人： Woong-Kwon Kim ,  Jae-Beom Choi ,  Sung-Sik Bae ,  Kwang-Jo Hwang

IPC分类号： G02F1/136 ,  G02F1/1362 ,  G02F1/1333 ,  G02F1/1335

CPC分类号： G02F1/136227

摘要： A liquid crystal display according to the present invention uses an organic layer treated with H2 plasma before fabricating an inorganic layer on the top of the organic layer. When forming thin film transistors (TFT) used in the LCD, an Indium Tin Oxide layer is fabricated above the TFTs and acts as a pixel electrode. When the organic layer, such as a passivation layer, is treated with the H2 plasma, an intermediate layer having an O—H bonding structure is formed to enhance bonding or attachment of an inorganic layer, such as an ITO layer, to the organic layer.

摘要翻译： 根据本发明的液晶显示器在有机层的顶部制造无机层之前，使用用H 2等离子体处理的有机层。 当形成在LCD中使用的薄膜晶体管（TFT）时，在TFT之上制造铟锡氧化物层，并用作像素电极。 当用H 2等离子体处理诸如钝化层的有机层时，形成具有O-H键结构的中间层，以增强诸如ITO层的无机层与有机层的结合或附着。

公开(公告)号：US06552759B2

公开(公告)日：2003-04-22

申请号：US10125450

申请日：2002-04-19

申请人： Woong-Kwon Kim ,  Jae-Beom Choi ,  Sung-Sik Bae ,  Kwang-Jo Hwang

发明人： Woong-Kwon Kim ,  Jae-Beom Choi ,  Sung-Sik Bae ,  Kwang-Jo Hwang

IPC分类号： G02F1136

CPC分类号： G02F1/136227

摘要： A liquid crystal display according to the present invention uses an organic layer treated with H2 plasma before fabricating an inorganic layer on the top of the organic layer. When forming thin film transistors (TFT) used in the LCD, an Indium Tin Oxide layer is fabricated above the TFTs and acts as a pixel electrode. When the organic layer, such as a passivation layer, is treated with the H2 plasma, an intermediate layer having an O—H bonding structure is formed to enhance bonding or attachment of an inorganic layer, such as an ITO layer, to the organic layer.

公开(公告)号：US08652885B2

公开(公告)日：2014-02-18

申请号：US11760869

申请日：2007-06-11

申请人： Byoung-Deog Choi ,  Sung-Sik Bae ,  Won-Sik Kim

发明人： Byoung-Deog Choi ,  Sung-Sik Bae ,  Won-Sik Kim

IPC分类号： H01L21/00

CPC分类号： H01L27/12 ,  H01L29/78615 ,  H01L29/78639 ,  H01L29/78675

摘要： A method of fabricating a thin film transistor includes forming an active layer on an insulating substrate; forming a gate insulation film on the insulating substrate; forming source, drain, and body contact regions which are separated by a channel region in the active layer; forming a gate on the gate insulation film; forming an interlayer insulation film on the insulating substrate; and forming source and drain electrodes electrically connected with the source and drain regions, respectively, wherein a voltage is applied to the channel region of the active layer through the body contact region, and the body contact region is connected to the source or drain electrode.

摘要翻译： 制造薄膜晶体管的方法包括在绝缘基板上形成有源层; 在绝缘基板上形成栅极绝缘膜; 形成由有源层中的沟道区分隔的源极，漏极和体接触区域; 在栅极绝缘膜上形成栅极; 在绝缘基板上形成层间绝缘膜; 以及分别形成与源极和漏极区域电连接的源极和漏极，其中电压通过本体接触区域施加到有源层的沟道区域，并且主体接触区域连接到源极或漏极电极。