摘要:
The invention provides a heat treatment apparatus, in which an intake valve (91a) is mounted on an ambient gas feed pipe (91) connected to a heating chamber (12), an exhaust valve (131a) is mounted on an exhaust pipe (131), and a pressure sensor (150) is provided on the heating chamber (12). Through the control of a control unit (80) connected to the pressure sensor (150), to the intake valve (91a) and to the exhaust valve (131a), the intake valve (91a) and the exhaust valve (131a) are opened or closed, thus supplying ambient gas into the heating chamber (12) or exhausting ambient gas from the cooling chamber (13) depending on an internal pressure of the heating chamber (12). Thus, the amount of ambient gas used in heat treating workpieces (1) is minimized and thus operational costs are reduced. It is possible to prevent accidents such as gas explosions as well as to reduce environmental contamination caused by the combustion of ambient gas.
摘要:
The invention provides a heat treatment apparatus, in which an intake valve (91a) is mounted on an ambient gas feed pipe (91) connected to a heating chamber (12), an exhaust valve (131a) is mounted on an exhaust pipe (131), and a pressure sensor (150) is provided on the heating chamber (12). Through the control of a control unit (80) connected to the pressure sensor (150), to the intake valve (91a) and to the exhaust valve (131a), the intake valve (91a) and the exhaust valve (131a) are opened or closed, thus supplying ambient gas into the heating chamber (12) or exhausting ambient gas from the cooling chamber (13) depending on an internal pressure of the heating chamber (12). Thus, the amount of ambient gas used in heat treating workpieces (1) is minimized and thus operational costs are reduced. It is possible to prevent accidents such as gas explosions as well as to reduce environmental contamination caused by the combustion of ambient gas.
摘要:
In one embodiment, the semiconductor device includes a non-volatile memory cell array. Memory cells of the non-volatile memory cell array are resistance based, and each memory cell has a resistance that changes over time after data is written into the memory cell. A write address buffer is configured to store write addresses associated with data being written into the non-volatile memory cell array, and a read unit is configured to perform a read operation to read data from the non-volatile memory cell array. The read unit is configured to control a read current applied to the non-volatile memory cell array during the read operation based on whether a read address matches one of the stored write addresses and at least one indication of settling time of the data being written into the non-volatile memory cell array.
摘要:
In one embodiment, the semiconductor device includes a non-volatile memory cell array. Memory cells of the non-volatile memory cell array are resistance based, and each memory cell has a resistance that changes over time after data is written into the memory cell. A write address buffer is configured to store write addresses associated with data being written into the non-volatile memory cell array, and a read unit is configured to perform a read operation to read data from the non-volatile memory cell array. The read unit is configured to control a read current applied to the non-volatile memory cell array during the read operation based on whether a read address matches one of the stored write addresses and at least one indication of settling time of the data being written into the non-volatile memory cell array.