公开(公告)号：US20130134032A1

公开(公告)日：2013-05-30

申请号：US13728448

申请日：2012-12-27

Applicant: CANON ANELVA CORPORATION

Inventor： Koji TSUNEKAWA ,  Yoshinori NAGAMINE ,  Kazumasa NISHIMURA ,  Franck ERNULT

IPC: G11B5/39

CPC classification number: G11B5/3906 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  C23C14/081 ,  C23C14/34 ,  C23C14/3492 ,  C23C14/568 ,  C23C14/5853 ,  G01R33/09 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3909 ,  H01F41/18 ,  H01F41/307 ,  H01L43/08 ,  H01L43/12

Abstract: One embodiment of the present invention is a method of fabricating a tunnel magnetic resistive element including a first ferromagnetic layer, a tunnel barrier layer and a second ferromagnetic layer, comprising a step of making the tunnel barrier layer, comprising the step of making the tunnel barrier layer includes the steps of: forming a first layer on the first ferromagnetic layer by applying DC power to a metal target and introducing sputtering gas without introducing oxygen gas in a sputtering chamber; and forming a second layer on the first layer by applying DC power to the metal target and introducing the sputtering gas and oxygen gas with the DC power to be applied to the metal target from the step of forming the first layer in the sputtering chamber, wherein the second layer is oxygen-doped.

Abstract translation: 本发明的一个实施例是制造包括第一铁磁层，隧道势垒层和第二铁磁层的隧道磁阻元件的方法，包括制造隧道势垒层的步骤，包括使隧道势垒 层包括以下步骤：通过向金属靶施加直流电力并在溅射室中引入氧气而引入溅射气体，在第一铁磁层上形成第一层; 以及在所述溅射室中形成所述第一层的步骤，通过向所述金属靶施加直流电力并将所述溅射气体和氧气与所述施加到所述金属靶的直流电力引入所述第一层，形成第二层，其中， 第二层是氧掺杂的。