Imaging device and imaging system

    公开(公告)号:US11935905B2

    公开(公告)日:2024-03-19

    申请号:US17063187

    申请日:2020-10-05

    IPC分类号: H01L27/146 H04N25/704

    摘要: An imaging device comprises pixels. The pixel includes first semiconductor regions of a first conductivity type provided in a surface part of a semiconductor substrate and a second semiconductor region of a second conductivity type provided in the surface part of the semiconductor substrate between the first semiconductor regions. The pixel includes: a light-receiving unit in which photodiodes each configured between the second semiconductor region and one of the first semiconductor regions; quenching circuits, each connected to a corresponding one of the first semiconductor regions; and a counter unit connected to each of connection nodes between the first semiconductor regions and the quenching circuits and counts a pulse generated in response to a photon being incident on the light-receiving unit. The second semiconductor region is provided across a deeper part of the semiconductor substrate than the first semiconductor regions.

    Image sensor and control method thereof, and image capturing apparatus

    公开(公告)号:US11044434B2

    公开(公告)日:2021-06-22

    申请号:US16744317

    申请日:2020-01-16

    摘要: An image sensor having a plurality of pixels each of which comprises: a photoelectric converter that repeatedly generates charge corresponding to an amount of incident light; an A/D converter that A/D converts a voltage corresponding to the charge generated by the photoelectric converter into a digital signal by comparing the voltage with a reference voltage that changes with lapse of time; a capacitor that holds a threshold voltage based on the voltage corresponding to the charge; and a switching circuit that switches whether to perform A/D conversion on a voltage that corresponds to newly generated charge by the photoelectric converter based on a comparison result between the voltage that corresponds to the newly generated charge and the threshold voltage held in the capacitor.

    Solid-state image sensor, image capturing apparatus and image capturing method

    公开(公告)号:US10834349B2

    公开(公告)日:2020-11-10

    申请号:US16027651

    申请日:2018-07-05

    IPC分类号: H04N5/378 H04N7/18

    摘要: A solid-state image sensor comprises: a plurality of pixels each provided with a sensor unit that generates a pulse signal at a frequency corresponding to a frequency of reception of photons; a first counter that counts a number of pulses generated by the sensor unit; and an output unit that outputs a signal corresponding to a count value counted by the first counter in a case where change in the number of pulses detected per unit time is greater than a threshold.

    IMAGE SENSOR AND ELECTRONIC DEVICE HAVING THE SAME

    公开(公告)号:US20190289213A1

    公开(公告)日:2019-09-19

    申请号:US16354933

    申请日:2019-03-15

    IPC分类号: H04N5/232

    摘要: An image sensor that obtains an image in which shake is corrected, while at the same time suppresses an increase in the circuit size, is disclosed. The image sensor has a plurality of pixels. Each of the plurality of pixels includes a light-sensitive element that detects the incidence of single photons; and a counter that counts a pulse contained in a signal. The image sensor further comprises a control unit that, on the basis of detected shake, switches a signal of the light-sensitive element supplied to the counter in a pixel, or replaces a count value of the counter of the pixel with a count value of the counter in another pixel.

    IMAGE PROCESSING APPARATUS, IMAGE PROCESSING METHOD, NON-TRANSITORY COMPUTER-READABLE STORAGE MEDIUM, AND IMAGE PICKUP APPARATUS FOR PROCESSING A PICKED-UP IMAGE

    公开(公告)号:US20170126967A1

    公开(公告)日:2017-05-04

    申请号:US15404773

    申请日:2017-01-12

    IPC分类号: H04N5/232

    摘要: An image processing apparatus for processing a picked-up image which is output from an image pickup element in which a microlens array for obtaining the picked-up image including ray directional information of an object image formed by a photographing optical system has been arranged has: a refocus processing unit for executing a refocus processing of the obtained picked-up image on the basis of the ray directional information and generating a reconstruction image; and a defect pixel detection unit for detecting a defect pixel from the obtained picked-up image. When the picked-up image is obtained, the detection of the defect pixel of the obtained picked-up image is performed. When a refocus processing is instructed, the refocus processing is executed to the picked-up image in which the detection of the defect pixel is performed.

    IMAGE SENSOR AND IMAGE CAPTURING APPARATUS
    8.
    发明申请

    公开(公告)号:US20200169684A1

    公开(公告)日:2020-05-28

    申请号:US16691229

    申请日:2019-11-21

    摘要: An image sensor comprises: a plurality of pixels, each pixel including a light-receiving portion that outputs an electrical signal obtained by photoelectrically converting incident light and an A/D converter that AD-converts the electrical signal, the plurality of pixels configured to be capable of AD-converting a signal output from the light-receiving portion of a first pixel, among a predetermined plurality of pixels, using the A/D converter of another pixel, every predetermined plurality of pixels; and a selection circuit that selects a pixel to AD-convert the electrical signal output from the light-receiving portion of the first pixel, every predetermined plurality of pixels. The A/D converters of the predetermined plurality of pixels carry out the AD conversion in parallel.

    IMAGE SENSOR AND IMAGE CAPTURE APPARATUS
    10.
    发明申请

    公开(公告)号:US20190238781A1

    公开(公告)日:2019-08-01

    申请号:US16376046

    申请日:2019-04-05

    摘要: In a pixel section of an image sensor, pixels are arranged two-dimensionally, each of the pixels including an amplifier transistor that is connected to a power voltage and has a gate into which a voltage of a signal charge generated by a photoelectric conversion area is input and a selection transistor that is connected to the amplifier transistor and a signal line. The image sensor includes an AD conversion circuit having a reference transistor having a gate into which a ramp signal is input and a constant current source that is connected to the reference transistor and the signal line. The voltage of the ramp signal or a driving ability of the reference transistor changes depending on whether one selection transistor or a plurality of selection transistors is/are turned on per signal line to obtain a signal charge to be AD-converted.