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1.
公开(公告)号:US20240355668A1
公开(公告)日:2024-10-24
申请号:US18637949
申请日:2024-04-17
发明人: Tatsuya SUZUKI , Nobuhiko SATO
IPC分类号: H01L21/70 , H01L21/02 , H01L21/28 , H01L21/8234
CPC分类号: H01L21/707 , H01L21/0214 , H01L21/0228 , H01L21/28202 , H01L21/823475
摘要: A semiconductor apparatus according to an embodiment of the present disclosure includes: a substrate; a wiring layer serving as a topmost layer formed over the substrate; a first protection film formed so as to cover the wiring layer; a planarization film formed on the first protection film; and a second protection film formed on the planarization film. The first protection film and the second protection film are each thicker than the planarization film.