公开(公告)号：US12087829B2

公开(公告)日：2024-09-10

申请号：US17500089

申请日：2021-10-13

申请人： CHANGXIN MEMORY TECHNOLOGIES, INC.

发明人： Bing Zou ,  Cheng Yeh Hsu

IPC分类号： H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H10B99/00 ,  H01L21/265 ,  H01L21/66

CPC分类号： H01L29/401 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/66621 ,  H10B99/00 ,  H01L21/26513 ,  H01L22/12

摘要： Embodiments of the present application provide a semiconductor structure and its fabricating method, and a semiconductor memory. The method of fabricating a semiconductor structure comprises providing a substrate and performing ion implantation on the substrate to form an active area, forming a gate groove on surface of the substrate, measuring depth of the gate groove, and performing ion implantation compensation, if the depth of the gate groove meets a preset condition, on the substrate according to the depth of the gate groove, and forming an ion compensation region in the active area at one side of the gate groove.

公开(公告)号：US20220077289A1

公开(公告)日：2022-03-10

申请号：US17455691

申请日：2021-11-19

申请人： CHANGXIN MEMORY TECHNOLOGIES, INC.

发明人： Qu Luo ,  Cheng Yeh Hsu

IPC分类号： H01L29/40 ,  H01L29/423

摘要： Disclosed are a semiconductor device and a manufacturing method thereof. The method includes: providing a semiconductor substrate; forming a first wordline trench structure; forming a first sacrificial layer at the bottom of the first wordline trench structure; filling the first wordline trench structure located in active regions by epitaxial growth; forming a first insulation layer covering the top of the semiconductor substrate and the first wordline trench structure; forming a second wordline trench structure and a fin-type structure in the active regions, a depth of the second wordline trench structure being less than that of the first wordline trench structure, and a projection of the second wordline trench structure in a vertical direction completely overlapping with a projection of the first sacrificial layer in the vertical direction; removing the first sacrificial layer; and filling the first wordline trench structure, the second wordline trench structure and the wordline tunnel.