公开(公告)号：US20060244151A1

公开(公告)日：2006-11-02

申请号：US10908204

申请日：2005-05-02

申请人： CHEN-HUA YU ,  CHENG-LIN HUANG ,  SHAU-LIN SHUE ,  CHING-HUA HSIEH ,  SHING-CHYANG PAN ,  HSIEN-MING LEE LEE ,  HSUEH-HUNG FU

发明人： CHEN-HUA YU ,  CHENG-LIN HUANG ,  SHAU-LIN SHUE ,  CHING-HUA HSIEH ,  SHING-CHYANG PAN ,  HSIEN-MING LEE LEE ,  HSUEH-HUNG FU

IPC分类号： H01L23/48

CPC分类号： H01L23/5226 ,  H01L21/76805 ,  H01L21/76844 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： Semiconductor devices having an oblique metal recess for receiving metal during metallization processes are described. In one example, a semiconductor device includes a dielectric layer formed over a conductive pad disposed in a substrate. The conductive pad is etched to include an oblique recess, which interfaces with a metal deposited during a metallization process. Related methods for forming such metal contacts and interconnections for the semiconductor device are also described.

摘要翻译： 描述了在金属化处理期间具有用于接收金属的倾斜金属凹部的半导体器件。 在一个示例中，半导体器件包括在布置在衬底中的导电焊盘上形成的电介质层。 导电焊盘被蚀刻以包括倾斜凹部，其与在金属化过程期间沉积的金属相接触。 还描述了用于形成用于半导体器件的金属触点和互连的相关方法。