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公开(公告)号：US20220320227A1
公开(公告)日：2022-10-06
申请号：US17310401
申请日：2020-09-30
发明人： Tao Gao , Peng Huang , Bingqiang Gui , Ke Yang
IPC分类号： H01L27/32
摘要： A display substrate, a display panel, and a display device are provided. The display substrate includes: a base substrate; a first semiconductor layer on the base substrate; and a second semiconductor layer on a side of the first semiconductor layer away from the base substrate. The display substrate further includes a plurality of thin film transistors on the base substrate, which at least include a first transistor, a second transistor and a third transistor. Each of the plurality of thin film transistors includes an active layer. The active layer of at least one of the first transistor and the second transistor is located in the second semiconductor layer and contains an oxide semiconductor material. The active layer of the third transistor is located in the first semiconductor layer and contains a polysilicon semiconductor material. At least one of the first transistor and the second transistor has a dual-gate structure.
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公开(公告)号：US12068333B2
公开(公告)日：2024-08-20
申请号：US17310401
申请日：2020-09-30
发明人： Tao Gao , Peng Huang , Bingqiang Gui , Ke Yang
IPC分类号： H01L27/12 , H01L29/786 , H10K59/131 , G09G3/3233 , H10K59/35
CPC分类号： H01L27/1251 , H01L27/1225 , H01L29/78648 , H10K59/131 , G09G3/3233 , G09G2300/0426 , H10K59/351
摘要： A display substrate, a display panel, and a display device are provided. The display substrate includes: a base substrate; a first semiconductor layer on the base substrate; and a second semiconductor layer on a side of the first semiconductor layer away from the base substrate. The display substrate further includes a plurality of thin film transistors on the base substrate, which at least include a first transistor, a second transistor and a third transistor. Each of the plurality of thin film transistors includes an active layer. The active layer of at least one of the first transistor and the second transistor is located in the second semiconductor layer and contains an oxide semiconductor material. The active layer of the third transistor is located in the first semiconductor layer and contains a polysilicon semiconductor material. At least one of the first transistor and the second transistor has a dual-gate structure.
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公开(公告)号：US11737342B2
公开(公告)日：2023-08-22
申请号：US17210844
申请日：2021-03-24
发明人： Huaisen Ren , Ke Yang , Tao Gao , Zubin Lv , Peng Hou , Yanqiang Wang , Yongzhan Han
IPC分类号： H10K65/00 , G06V40/13 , H10K59/122 , H10K59/124 , H10K59/125 , H10K59/40 , H10K59/12
CPC分类号： H10K65/00 , G06V40/1318 , H10K59/122 , H10K59/124 , H10K59/125 , H10K59/1201 , H10K59/40
摘要： The present disclosure provides a display substrate and a manufacturing method thereof, and a display apparatus. The display substrate has a fingerprint identification region. The display substrate includes a base substrate; a display unit on the base substrate and including a display thin film transistor and a light-emitting device, a second electrode of the display thin film transistor being coupled to a first electrode of the light-emitting device; and a fingerprint identification unit at a gap between adjacent display units in the fingerprint identification region and including a fingerprint identification transistor and a photosensitive device, a first electrode of the fingerprint identification transistor being coupled to a second electrode of the photosensitive device. The display substrate further includes a gate insulating layer on a side of an active layer of the display thin film transistor and an active layer of the fingerprint identification transistor distal to the base substrate.
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