公开(公告)号：US20120025230A1

公开(公告)日：2012-02-02

申请号：US12848053

申请日：2010-07-30

申请人： CHUNHUI YAN ,  JIANPING ZHANG ,  YING LIU ,  FANGHAI ZHAO ,  KEVIN MA

发明人： CHUNHUI YAN ,  JIANPING ZHANG ,  YING LIU ,  FANGHAI ZHAO ,  KEVIN MA

IPC分类号： H01L33/08 ,  H01L33/02 ,  H01L33/00

CPC分类号： H01L33/08 ,  H01L27/153 ,  H01L33/007 ,  H01L33/20 ,  H01L33/24 ,  H01L33/32

摘要： A three-dimensional LED structure with vertically displaced active-region includes at least two groups of vertically displaced surfaces on a non-planar substrate. The first group of surfaces are separated from the second group of surfaces by a vertical distance in the growth direction of the LED structure. The first group of surfaces are connected to the second group of surfaces by sidewalls, respectively. The sidewalls can be inclined or vertical and have a sufficient height so that a layer such as an n-type layer, an active-region, or a p-type layer in a first LED structure deposited on the first group of surfaces and a corresponding layer such as an n-type layer, an active-region, or a p-type layer in a second LED structure deposited on the second group of surfaces are separated by the sidewalls. The two groups of surfaces may be vertically displaced from each other in certain areas of an LED chip, while merge into an integral surface in other areas. A method for fabricating the three-dimensional LED structure is also provided.

摘要翻译： 具有垂直位移的有源区的三维LED结构在非平面衬底上包括至少两组垂直移位的表面。 第一组表面在LED结构的生长方向上与第二组表面分离一个垂直距离。 第一组表面分别通过侧壁连接到第二组表面。 侧壁可以是倾斜的或垂直的并且具有足够的高度，使得在第一组表面上沉积的第一LED结构中的诸如n型层，有源区或p型层的层和相应的 在第二组表面上沉积的第二LED结构中的诸如n型层，有源区或p型层的层被侧壁隔开。 两组表面可以在LED芯片的某些区域中彼此垂直位移，同时在其他区域中合并成一个整体表面。 还提供了一种用于制造三维LED结构的方法。

公开(公告)号：US20110315952A1

公开(公告)日：2011-12-29

申请号：US12824097

申请日：2010-06-25

申请人： CHUNHUI YAN ,  JIANPING ZHANG ,  YING LIU ,  FANGHAI ZHAO

发明人： CHUNHUI YAN ,  JIANPING ZHANG ,  YING LIU ,  FANGHAI ZHAO

IPC分类号： H01L33/04 ,  H01L21/302

CPC分类号： H01L33/64 ,  H01L33/06 ,  H01L33/24

摘要： A light-emitting device comprises an active-region sandwiched between an n-type layer and a p-type layer, that allows lateral carrier injection into the active-region so as to reduce heat generation in the active-region and to minimize additional forward voltage increase associated with bandgap discontinuity. In some embodiments, the active-region is a vertically displaced multiple-quantum-well (MQW) active-region. A method for fabricating the same is also provided.

摘要翻译： 发光器件包括夹在n型层和p型层之间的有源区，其允许横向载流子注入到有源区中，以便减少有源区中的发热并使附加的前向最小化 电压增加与带隙不连续相关。 在一些实施例中，有源区是垂直移位的多量子阱（MQW）活性区。 还提供了一种制造该方法的方法。

公开(公告)号：US20140203287A1

公开(公告)日：2014-07-24

申请号：US13555087

申请日：2012-07-21

申请人： JIANPING ZHANG ,  MARIO SAENGER ,  WILLIAM SO ,  FANGHAI ZHAO ,  CHUNHUI YAN

发明人： JIANPING ZHANG ,  MARIO SAENGER ,  WILLIAM SO ,  FANGHAI ZHAO ,  CHUNHUI YAN

IPC分类号： H01L33/32

CPC分类号： H01L33/145

摘要： A nitride light emitting device comprises a current blocking Schottky junction zone formed below the p-electrode and above the active region so that current injection from the p-electrode to the area of the active region that is vertically shaded by the p-electrode is blocked by the Schottky junction zone. A method for fabricating the same is also provided.

摘要翻译： 氮化物发光器件包括形成在p电极下方和有源区上方的电流阻挡肖特基结区域，使得从p电极到被p电极垂直阴影的有源区域的电流被阻挡 由肖特基交界处。 还提供了一种制造该方法的方法。