公开(公告)号：US10553463B2

公开(公告)日：2020-02-04

申请号：US15988128

申请日：2018-05-24

Applicant: Tokyo Electron Limited ,  CKD Corporation

Inventor： Atsushi Kobayashi ,  Atsuhiko Tabuchi ,  Hideki Wakai ,  Kazutoshi Itoh ,  Yasuhisa Hirose ,  Keiichi Nishikawa ,  Takahiro Minatani

IPC: H01L21/67 ,  H01L21/683 ,  H01L21/66

Abstract: A temperature control system includes a first temperature adjustment unit storing fluid at a first temperature; a second temperature adjustment unit storing fluid at a second temperature higher than the first temperature; a low-temperature flow path for passing fluid supplied from the first temperature adjustment unit; a high-temperature flow path for passing fluid supplied from the second temperature adjustment unit; a bypass flow path for circulating fluid; a combination flow path for passing fluid from the low-temperature flow path, the high-temperature flow path, and the bypass flow path merged at a merging part; a temperature adjustment part that passes fluid from the combination flow path and cools/heats a member of a semiconductor manufacturing device; and a control device that controls valve positions of variable valves attached to the three flow paths upstream of the merging part and adjusts the flow rate distribution ratio for the three flow paths.

公开(公告)号：US09984908B2

公开(公告)日：2018-05-29

申请号：US14354198

申请日：2012-11-13

Applicant: Tokyo Electron Limited ,  CKD Corporation

Inventor： Atsushi Kobayashi ,  Atsuhiko Tabuchi ,  Hideki Wakai ,  Kazutoshi Itoh ,  Yasuhisa Hirose ,  Keiichi Nishikawa ,  Takahiro Minatani

IPC: H01L21/00 ,  H01L21/67 ,  G05D23/19

CPC classification number: H01L21/67103 ,  G05D23/1934 ,  H01L21/67109 ,  H01L21/67248

Abstract: A temperature control system includes a first temperature adjustment unit storing fluid at a first temperature; a second temperature adjustment unit storing fluid at a second temperature higher than the first temperature; a low-temperature flow path for passing fluid supplied from the first temperature adjustment unit; a high-temperature flow path for passing fluid supplied from the second temperature adjustment unit; a bypass flow path for circulating fluid; a combination flow path for passing fluid from the low-temperature flow path, the high-temperature flow path, and the bypass flow path merged at a merging part; a temperature adjustment part that passes fluid from the combination flow path and cools/heats a member of a semiconductor manufacturing device; and a control device that controls valve positions of variable valves attached to the three flow paths upstream of the merging part and adjusts the flow rate distribution ratio for the three flow paths.

公开(公告)号：US09508476B2

公开(公告)日：2016-11-29

申请号：US14812922

申请日：2015-07-29

Applicant: CKD CORPORATION

Inventor： Masayuki Kouketsu ,  Akihiro Ito ,  Kazutoshi Itoh ,  Takashi Hosono ,  Sadayoshi Muto

IPC: H01F7/00 ,  H01F5/06 ,  H01F41/12 ,  F16K49/00 ,  F16K31/06 ,  H01F7/08 ,  H01F5/00 ,  H01J35/14

CPC classification number: H01F5/06 ,  F16K31/0675 ,  F16K49/00 ,  H01F5/00 ,  H01F7/08 ,  H01F27/08 ,  H01F41/064 ,  H01F41/125 ,  H01J35/14 ,  H01J2235/087 ,  H01J2235/1287 ,  Y10T29/49073 ,  Y10T137/6416

Abstract: An electromagnetic coil includes a conductor winding 12a formed by winding a conductor 12b a plurality of times about a predetermined axis, and a ceramic layer 12c formed through thermal spraying on an axial end surface of the conductor winding 12a, and having a flattened surface. A maximal value t12 of thickness of the ceramic layer 12c is set to three times or less a maximal value t11 of depth of the recesses formed at the surface of turns of the conductor 12b at the axial end surface.

Abstract translation: 电磁线圈包括通过围绕预定轴线多次缠绕导体12b而形成的导体绕组12a，以及通过热喷涂形成在导体绕组12a的轴向端面上并具有扁平表面的陶瓷层12c。 将陶瓷层12c的厚度的最大值t12设定为在轴向端面处形成在导体12b的匝面的凹部的深度的最大值t11的三倍以下。

公开(公告)号：US20140262199A1

公开(公告)日：2014-09-18

申请号：US14354198

申请日：2012-11-13

Applicant: Tokyo Electron Limited ,  CKD Corporation

Inventor： Atsushi Kobayashi ,  Atsuhiko Tabuchi ,  Hideki Wakai ,  Kazutoshi Itoh ,  Yasuhisa Hirose ,  Keiichi Nishikawa ,  Takahiro Minatani

IPC: H01L21/67

CPC classification number: H01L21/67103 ,  G05D23/1934 ,  H01L21/67109 ,  H01L21/67248

Abstract: A temperature control system includes a first temperature adjustment unit storing fluid at a first temperature; a second temperature adjustment unit storing fluid at a second temperature higher than the first temperature; a low-temperature flow path for passing fluid supplied from the first temperature adjustment unit; a high-temperature flow path for passing fluid supplied from the second temperature adjustment unit; a bypass flow path for circulating fluid; a combination flow path for passing fluid from the low-temperature flow path, the high-temperature flow path, and the bypass flow path merged at a merging part; a temperature adjustment part that passes fluid from the combination flow path and cools/heats a member of a semiconductor manufacturing device; and a control device that controls valve positions of variable valves attached to the three flow paths upstream of the merging part and adjusts the flow rate distribution ratio for the three flow paths.

Abstract translation: 温度控制系统包括：第一温度调节单元，其在第一温度下存储流体; 第二温度调节单元，其在高于第一温度的第二温度下存储流体; 用于使从第一温度调节单元供应的流体通过的低温流路; 用于使从第二温度调节单元供给的流体通过的高温流路; 用于循环流体的旁路流路; 用于使来自低温流路的流体，高温流路和在合流部合流的旁通流路的组合流路; 温度调节部，其使来自所述组合流路的流体冷却/加热半导体制造装置的构件; 以及控制装置，其控制附接到合流部上游的三个流路的可变阀的阀位，并调节三个流路的流量分配比。