公开(公告)号：US10900927B2

公开(公告)日：2021-01-26

申请号：US16356019

申请日：2019-03-18

Applicant: UNIVERSITY OF SOUTH CAROLINA ,  CLEMSON UNIVERSITY

Inventor： Kenneth Walsh ,  Goutam Koley ,  Md. Sayful Islam ,  Hongmei Li

IPC: G01N27/414 ,  G01N27/333 ,  G01N27/30 ,  H01L29/16

Abstract: A graphene-based ion sensitive field effect transistor (GISFET) with high sensitivity and selectivity for ions is provided. For example, the GISFET of the present invention can exhibit high sensitivity and selectivity for K+ ions has been demonstrated utilizing a valinomycin-based ion selective membrane. The sensitivity of the GISFET can be at least about 50 millivolts/decade and can be stable for a time period of about two months, indicating the GISFET's reliability and effectiveness for physiological monitoring.

公开(公告)号：US20190293595A1

公开(公告)日：2019-09-26

申请号：US16356019

申请日：2019-03-18

Applicant: UNIVERSITY OF SOUTH CAROLINA ,  CLEMSON UNIVERSITY

Inventor： Kenneth Walsh ,  Goutam Koley ,  Md. Sayful Islam ,  Hongmei Li

IPC: G01N27/414 ,  H01L29/16 ,  G01N27/30 ,  G01N27/333

Abstract: A graphene-based ion sensitive field effect transistor (GISFET) with high sensitivity and selectivity for ions is provided. For example, the GISFET of the present invention can exhibit high sensitivity and selectivity for K+ ions has been demonstrated utilizing a valinomycin-based ion selective membrane. The sensitivity of the GISFET can be at least about 50 millivolts/decade and can be stable for a time period of about two months, indicating the GISFET's reliability and effectiveness for physiological monitoring.

公开(公告)号：US11630007B2

公开(公告)日：2023-04-18

申请号：US16909453

申请日：2020-06-23

Applicant: CLEMSON UNIVERSITY

Inventor： Soaram Kim ,  Goutam Koley ,  Yongchang Dong ,  Apparao M. Rao

IPC: G01L1/18 ,  H01C17/00 ,  H01C1/14 ,  H01C10/10

Abstract: Pressure/strain piezoresistive are described that include a poled piezoelectric polymer such as PVDF or P(VDF-TrFE) and graphene. The poled piezoelectric polymer and the graphene are electronically coupled to form a heterojunction and provide an ultra-high sensitivity pressure/strain sensor. The sensors can be carried on a flexible supporting substrate such as PDMS or PET to exhibit high flexibility. The materials of formation can be biocompatible and the sensors can be wearable or implantable.