公开(公告)号：US12132454B2

公开(公告)日：2024-10-29

申请号：US17415546

申请日：2019-12-12

Applicant: COMET AG

Inventor： Daniel Gruner ,  Andreas Hartmann ,  Philippe Dennler ,  Markus Reiff ,  André Grede ,  Anton Labanc

IPC: H03F1/52 ,  H01J37/32 ,  H03F3/195 ,  H03F3/24

CPC classification number: H03F3/245 ,  H01J37/32183 ,  H03F3/195 ,  H03F1/523 ,  H03F2200/444 ,  H03F2200/451 ,  H03F2200/541

Abstract: A radiofrequency, RF, power amplifier, including at least one field-effect transistor, FET, wherein a source terminal of the at least one FET is connected to ground. At least one diode is included, wherein a cathode of the at least one diode is connected to a drain terminal of the at least one FET and an anode of the at least one diode is connected to ground. An output network is connected to the drain terminal of the at least one FET. An input network is connected to a gate terminal of the at least one FET.

公开(公告)号：US20220060160A1

公开(公告)日：2022-02-24

申请号：US17415546

申请日：2019-12-12

Applicant: COMET AG

Inventor： Daniel Gruner ,  Andreas Hartmann ,  Philippe Dennler ,  Markus Reiff ,  André Grede ,  Anton Labanc

IPC: H03F3/24 ,  H03F3/195 ,  H01J37/32

Abstract: A radiofrequency, RF, power amplifier, including at least one field-effect transistor, FET, wherein a source terminal of the at least one FET is connected to ground. At least one diode is included, wherein a cathode of the at least one diode is connected to a drain terminal of the at least one FET and an anode of the at least one diode is connected to ground. An output network is connected to the drain terminal of the at least one FET. An input network is connected to a gate terminal of the at least one FET.