公开(公告)号：US20150060965A1

公开(公告)日：2015-03-05

申请号：US14451648

申请日：2014-08-05

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT

发明人： Pierre GIDON ,  Norbert MOUSSY

IPC分类号： H01L27/146 ,  H01L31/103

CPC分类号： H01L27/14643 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L31/1037

摘要： Photodetecting device comprising: a semiconductor layer doped according to a first type of conductivity; two first semiconductor portions doped according to a second type of conductivity opposed to the first type of conductivity, distinct and separated from one another, and arranged in the semiconductor layer next to one another; a second semiconductor portion doped according to the first type of conductivity with a level of doping greater than that of the semiconductor layer and delimiting, with the semiconductor layer, the first portions by forming p-n junctions, wherein a part of the semiconductor layer separates the first portions such that the depletion zones between the first portions form a potential barrier of which the level is less than the potential of the second portion and of the semiconductor layer.

摘要翻译： 光检测装置，包括：根据第一类导电性掺杂的半导体层; 根据与第一类型的导电性相反的第二类型的导电性，彼此不同且彼此分离并且彼此相邻布置在半导体层中的两个第一半导体部分被掺杂; 根据所述第一类型的导电性掺杂的第二半导体部分，其掺杂程度大于所述半导体层的掺杂水平，并且通过形成pn结来限定所述第一部分，其中半导体层的一部分将第一 使得第一部分之间的耗尽区形成电位低于第二部分和半导体层的电位的势垒的部分。