公开(公告)号：US12080821B2

公开(公告)日：2024-09-03

申请号：US18588391

申请日：2024-02-27

申请人： NANJING UNIVERSITY

发明人： Hai Lu ,  Dong Zhou ,  Weizong Xu

IPC分类号： H01L31/103 ,  H01L31/0224 ,  H01L31/0312 ,  H01L31/18

CPC分类号： H01L31/1037 ,  H01L31/022408 ,  H01L31/0312 ,  H01L31/1812

摘要： The present invention discloses a novel silicon carbide-based lateral PN junction extreme ultraviolet detector with enhanced detection performance based on selective-area ion implantation, including an N-type ohmic contact lower electrode, an N-type substrate and a lightly-doped epitaxial layer which are connected sequentially from bottom to top, where the lightly-doped epitaxial layer is an N-type lightly-doped epitaxial layer or a P-type lightly-doped epitaxial layer; in a case that the lightly-doped epitaxial layer is an N-type or P-type lightly-doped epitaxial layer, a P-type or N-type well region is formed on the surface of the N-type or P-type lightly-doped epitaxial layer through the selective-area ion implantation, a P-type or N-type ohmic contact upper electrode is arranged on the P-type or N-type well region, and the P-type or N-type ohmic contact upper electrode is provided with a metal conductive electrode along its periphery.

公开(公告)号：US20230393248A1

公开(公告)日：2023-12-07

申请号：US18236868

申请日：2023-08-22

申请人： Artilux, Inc.

发明人： Yun-Chung Na ,  Che-Fu Liang

IPC分类号： G01S7/4863 ,  G01S17/894 ,  G01S17/10 ,  H01L27/146 ,  H01L29/161 ,  H01L31/103

CPC分类号： G01S7/4863 ,  G01S17/894 ,  G01S17/10 ,  H01L27/14609 ,  H01L27/14629 ,  H01L27/14643 ,  H01L29/161 ,  H01L31/1037

摘要： An apparatus including a semiconductor substrate; an absorption layer coupled to the semiconductor substrate, the absorption layer including a photodiode region configured to absorb photons and to generate photo-carriers from the absorbed photons; one or more first switches controlled by a first control signal, the one or more first switches configured to collect at least a portion of the photo-carriers based on the first control signal; and one or more second switches controlled by a second control signal, the one or more second switches configured to collect at least a portion of the photo-carriers based on the second control signal, where the second control signal is different from the first control signal.

公开(公告)号：US20230378386A1

公开(公告)日：2023-11-23

申请号：US18358817

申请日：2023-07-25

申请人： ActLight SA

发明人： Maxim GUREEV ,  Denis SALLIN ,  Serguei OKHONIN

IPC分类号： H01L31/0352 ,  G01J1/42 ,  H01L25/18 ,  H01L27/146 ,  H01L31/103

CPC分类号： H01L31/035272 ,  G01J1/42 ,  H01L25/18 ,  H01L27/1463 ,  H01L27/14643 ,  H01L31/1037

摘要： A dynamic photodiode detector or detector array having a light absorbing region of doped semiconductor material for absorbing photons. Electrons or holes generated by photon absorption are detected with a construction of oppositely heavily doped anode and cathode regions and a heavily doped ground region of the same doping type as the anode region. Photon detection involves switching the device from reverse bias to forward bias to create a depletion region enclosing the anode region. When a photon is then absorbed the electron or hole thereby generated drifts under the electric field induced by the biasing to the depletion region where it causes the anode-to-ground current to increase. Furthermore, the detector is configured such that anode-to-cathode current starts to flow once a threshold number of electrons or holes reaches the depletion region, where the threshold may be one to provide single photon detection.

公开(公告)号：US10032951B2

公开(公告)日：2018-07-24

申请号：US14432886

申请日：2014-03-31

申请人： HAMAMATSU PHOTONICS K.K.

发明人： Peter Seitz

IPC分类号： G01J5/20 ,  H01L31/113 ,  H01L31/02 ,  H01L31/103 ,  H01L27/146 ,  G01J5/24 ,  G01J1/46

CPC分类号： H01L31/1136 ,  G01J1/46 ,  G01J5/24 ,  H01L27/14649 ,  H01L31/02019 ,  H01L31/103 ,  H01L31/1037

摘要： A photosensor for the detection of infrared radiation in the wavelength range of 1 to 1000 micrometers consists of a semiconductor substrate with a highly doped interaction volume for the incoming radiation. At the edge of this highly doped region, an extended gate electrode is placed consisting of a conducting material on top of an insulating layer. On the other side of the gate electrode, another highly doped semiconductor region is placed, acting as a charge collector. Through free carrier absorption in the interaction volume, incoming photons impart their energy on mobile charge carriers. In the case of free electrons, the gate electrode is biased slightly below the reset voltage of the interaction volume, so that the electrons carrying the additional energy of the absorbed photons can predominantly make the transition from the interaction volume across the gate electrode area to the charge collector volume.

公开(公告)号：US20180190698A1

公开(公告)日：2018-07-05

申请号：US15908447

申请日：2018-02-28

申请人： Artilux Corporation

发明人： Yun-Chung Na ,  Che-Fu Liang ,  Szu-Lin Cheng ,  Shu-Lu Chen ,  Kuan-Chen Chu ,  Chung-Chih Lin ,  Han-Din Liu

IPC分类号： H01L27/146 ,  H01L29/06 ,  H01L31/103 ,  H01L29/732 ,  H01L31/02 ,  H01L31/028 ,  H01L29/08 ,  H01L29/161

CPC分类号： H01L27/14612 ,  G01S7/4816 ,  G01S7/486 ,  G01S7/4914 ,  G01S17/36 ,  G01S17/42 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14681 ,  H01L29/0657 ,  H01L29/0804 ,  H01L29/161 ,  H01L29/732 ,  H01L29/735 ,  H01L31/02005 ,  H01L31/02019 ,  H01L31/02161 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/103 ,  H01L31/1037 ,  H01L31/1105

摘要： An optical apparatus including a semiconductor substrate; a first light absorption region supported by the semiconductor substrate, the first light absorption region including germanium and configured to absorb photons and to generate photo-carriers from the absorbed photons; a first layer supported by at least a portion of the semiconductor substrate and the first light absorption region, the first layer being different from the first light absorption region; one or more first switches controlled by a first control signal, the one or more first switches configured to collect at least a portion of the photo-carriers based on the first control signal; and one or more second switches controlled by a second control signal, the one or more second switches configured to collect at least a portion of the photo-carriers based on the second control signal, wherein the second control signal is different from the first control signal.

公开(公告)号：US20180108799A1

公开(公告)日：2018-04-19

申请号：US15609854

申请日：2017-05-31

申请人： STMICROELECTRONICS (RESEARCH & DEVELOPMENT) LIMITED

发明人： Laurence Stark

IPC分类号： H01L31/107 ,  H01L31/02 ,  H01L29/72

CPC分类号： H01L31/107 ,  G01J2001/4466 ,  H01L29/72 ,  H01L31/02027 ,  H01L31/0352 ,  H01L31/1037 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： An avalanche diode includes a PN junction with a first deep trench structure adjacent to the PN junction. An area via which photons impinge is provided, the PN junction extending substantially vertically with respect to the area. An avalanche diode array can be formed to include a number of avalanche diodes.

公开(公告)号：US09647165B2

公开(公告)日：2017-05-09

申请号：US14830870

申请日：2015-08-20

申请人： GLOBALFOUNDRIES INC.

发明人： Steven M. Shank ,  John J. Ellis-Monaghan ,  Marwan H. Khater ,  Jason S. Orcutt

IPC分类号： H01L31/105 ,  H01L31/0232 ,  H01L31/109 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/18

CPC分类号： H01L31/1812 ,  H01L31/022408 ,  H01L31/028 ,  H01L31/0312 ,  H01L31/035272 ,  H01L31/03529 ,  H01L31/03921 ,  H01L31/1037 ,  H01L31/109 ,  H01L31/1864 ,  H01L31/1872 ,  Y02E10/50

摘要： Various particular embodiments include a method for forming a photodetector, including: forming a structure including a barrier layer disposed between a layer of doped silicon (Si) and a layer of germanium (Ge), the barrier layer including a crystallization window; and annealing the structure to convert, via the crystallization window, the Ge to a first composition of silicon germanium (SiGe) and the doped Si to a second composition of SiGe.

公开(公告)号：US20150280047A1

公开(公告)日：2015-10-01

申请号：US14432886

申请日：2014-03-31

申请人： HAMAMATSU PHOTONICS K.K.

发明人： Peter Seitz

IPC分类号： H01L31/113 ,  G01J5/24 ,  H01L27/146

CPC分类号： H01L31/1136 ,  G01J1/46 ,  G01J5/24 ,  H01L27/14649 ,  H01L31/02019 ,  H01L31/103 ,  H01L31/1037

摘要： A photosensor for the detection of infrared radiation in the wavelength range of 1 to 1000 micrometers consists of a semiconductor substrate with a highly doped interaction volume for the incoming radiation. At the edge of this highly doped region, an extended gate electrode is placed consisting of a conducting material on top of an insulating layer. On the other side of the gate electrode, another highly doped semiconductor region is placed, acting as a charge collector. Through free carrier absorption in the interaction volume, incoming photons impart their energy on mobile charge carriers. In the case of free electrons, the gate electrode is biased slightly below the reset voltage of the interaction volume, so that the electrons carrying the additional energy of the absorbed photons can predominantly make the transition from the interaction volume across the gate electrode area to the charge collector volume.

摘要翻译： 用于检测1至1000微米波长范围内的红外辐射的光电传感器由具有用于入射辐射的高掺杂相互作用体积的半导体衬底组成。 在该高掺杂区域的边缘处，由绝缘层顶部的导电材料放置延伸的栅电极。 在栅电极的另一侧，放置另一个高掺杂半导体区域，充当电荷收集器。 通过相互作用体积中的自由载体吸收，入射光子将其能量赋予移动电荷载体。 在自由电子的情况下，栅电极被稍微偏置在相互作用体积的复位电压之下，使得携带吸收的光子的附加能量的电子可以主要地从跨越栅极电极区域的相互作用体积向 电荷收集器体积。

公开(公告)号：US20150263212A1

公开(公告)日：2015-09-17

申请号：US14635303

申请日：2015-03-02

申请人： Kabushiki Kaisha Toshiba

发明人： Shinji UYA ,  Nagataka Tanaka ,  Mokuji Kageyama ,  Hideo Numata

IPC分类号： H01L31/105 ,  H01L27/146 ,  H01L31/18

CPC分类号： H01L31/1804 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/3221 ,  H01L27/14621 ,  H01L27/14645 ,  H01L27/14656 ,  H01L27/14689 ,  H01L31/02162 ,  H01L31/02327 ,  H01L31/1037 ,  H01L31/186 ,  Y02E10/547 ,  Y02P70/521

摘要： According to one embodiment, a substrate for semiconductor devices includes a P-type semiconductor substrate, a P-type or N-type semiconductor layer, and a P-type or N-type epitaxial layer. The P-type or N-type semiconductor layer is provided at a surface layer of the semiconductor substrate and has a resistance value lower than a resistance value of the semiconductor substrate. The P-type or N-type epitaxial layer is provided on a surface of the semiconductor layer and has a resistance value higher than the resistance value of the semiconductor layer.

摘要翻译： 根据一个实施例，用于半导体器件的衬底包括P型半导体衬底，P型或N型半导体层以及P型或N型外延层。 P型或N型半导体层设置在半导体衬底的表面层上，其电阻值低于半导体衬底的电阻值。 P型或N型外延层设置在半导体层的表面上，其电阻值高于半导体层的电阻值。

公开(公告)号：US09123842B2

公开(公告)日：2015-09-01

申请号：US13554886

申请日：2012-07-20

申请人： Bahman Hekmatshoartabari ,  Jeehwan Kim ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Bahman Hekmatshoartabari ,  Jeehwan Kim ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L21/00 ,  H01L31/0352 ,  H01L31/103 ,  B82Y20/00

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L31/1037

摘要： A photoreceptor includes a multilayer blocking structure to reduce dark discharge of the surface voltage of the photoreceptor resulting from electron injection from an electrically conductive substrate. The multilayer blocking structure includes wide band gap semiconductor layers in alternating sequence with one or more narrow band gap blocking layers. A fabrication method of the photoreceptor includes transfer-doping of the narrow band gap blocking layers, which are deposited in alternating sequence with wide band gap semiconductor layers to form a blocking structure. Suppression of hole or electron injection can be obtained using the method.

摘要翻译： 感光体包括多层阻挡结构，以减少由导电基底电子注入的感光体的表面电压的暗放电。 多层阻挡结构包括与一个或多个窄带隙阻挡层交替顺序的宽带隙半导体层。 感光体的制造方法包括：以宽带隙半导体层交替排列形成阻挡结构的窄带隙阻挡层的转移掺杂。 使用该方法可以获得空穴或电子注入的抑制。