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1.发明申请公开(公告)号：US20190305518A1
公开(公告)日：2019-10-03
申请号：US16364241
申请日：2019-03-26
Inventor： Nicolas OLIVIER , Christophe JANY
Abstract: A laser diode of the VC SEL type includes, superimposed on top of a substrate, a bottom Bragg mirror, a region of one or more quantum wells, and a top Bragg mirror. A section of the bottom Bragg mirror has an area that is less than that of a section of the top Bragg mirror, the sections being defined in planes parallel to the plane of the substrate. The laser diode further includes a peripheral region, constituted by a confinement material, situated between the substrate and the top Bragg mirror, and surrounding at least the bottom Bragg mirror. The laser diode is devoid of any laterally-oxidized layer. Thanks to the specific geometrical configuration of the laser diode, the charge carriers are confined, during operation, to the center of the laser diode.
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2.发明申请公开(公告)号：US20200274321A1
公开(公告)日：2020-08-27
申请号：US16472136
申请日：2017-12-22
Inventor： Elodie GHEGIN , Christophe JANY , Fabrice NEMOUCHI , Philippe RODRIGUEZ , Bertrand SZELAG
Abstract: A process for producing a component includes a structure made of III-V material(s) on the surface of a substrate, the structure comprising at least one upper contact level defined on the surface of a first III-V material and a lower contact level defined on the surface of a second III-V material, comprising: successive operations of encapsulation of the structure with at least one dielectric; making primary apertures in a dielectric for the two contacts; making secondary apertures in a dielectric for the two contacts; at least partial filling of the apertures with at least one metallic material so as to produce upper contact bottom metallization and at least one upper contact pad in contact with the metallization for each of said contacts. A component produced by the process is also provided. The component may be a laser diode.
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