Method for forming a common electrode of a plurality of optoelectronic devices

    公开(公告)号:US11569411B2

    公开(公告)日:2023-01-31

    申请号:US17097639

    申请日:2020-11-13

    Inventor: Marion Volpert

    Abstract: A method for forming a common electrode is provided, including: a) providing a support substrate on which rest optoelectronic devices separated by trenches; b) forming a dielectric layer on front faces, flanks, and a bottom of the trenches, of a thickness E1 and a thickness E2, which is less than the thickness E1, at, respectively, the front faces and the flanks; c) etching a thickness E3 of the dielectric layer, so as to uncover the flanks at a first section of the trenches; d) forming a metal layer filling the trenches and covering the front faces; and e) performing a mechanochemical polishing of the metal layer, the polishing stopping on a portion of the dielectric layer, the metal layer remaining in the trenches forming the common electrode.

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