公开(公告)号：US08866375B2

公开(公告)日：2014-10-21

申请号：US13654838

申请日：2012-10-18

Applicant: Commissariat A L'Energie Atomique Et Aux Energies Alternatives

Inventor： Adrien Gasse ,  Yohan Desieres ,  Francois Levy

IPC: H01J1/62 ,  H01J63/04 ,  H01L33/46 ,  H01L33/50 ,  H05B33/10 ,  H05B33/12 ,  H01L33/52

CPC classification number: H05B33/12 ,  H01L33/46 ,  H01L33/507 ,  H01L33/52 ,  H05B33/10

Abstract: A light-emitting diode component includes a primary source, a conversion layer forming a secondary source configured for absorbing the primary radiation at least in part and emitting a secondary radiation, an encapsulation layer, situated between the primary and secondary sources. The light-emitting diode component also includes a reflection layer (i) situated between the encapsulation layer and the conversion layer and having a face in contact with the encapsulation layer so as to form an interface with the encapsulation layer, the reflection layer (i) and the encapsulation layer being configured so that the interface allows the primary radiation originating from the primary source to pass and reflects the secondary radiation toward the outside of the light emitting diode.

Abstract translation: 发光二极管部件包括主源，形成辅助源的转换层，其被配置为至少部分地吸收主辐射并且发射次级辐射，位于主源和次源之间的封装层。 发光二极管部件还包括位于封装层和转换层之间的反射层（i），并且具有与封装层接触的面以形成与封装层的界面，反射层（i） 并且所述封装层被配置为使得所述接口允许源自所述主源的所述主辐射通过并且将所述辅助辐射反射到所述发光二极管的外部。

公开(公告)号：US11495710B2

公开(公告)日：2022-11-08

申请号：US17109388

申请日：2020-12-02

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Adrien Gasse ,  Amélie Dussaigne ,  François Levy

IPC: H01L33/22 ,  H01L25/075 ,  H01L33/00 ,  H01L33/30 ,  H01L33/32 ,  H01L33/62

Abstract: A method for producing a patterned layer of material includes producing a first substrate having a patterned face, producing, against the patterned face of the first substrate, a stack of layers having an intermediate layer and the layer to be patterned, the intermediate layer being disposed between the layer to be patterned and the first substrate, a first face of the intermediate layer disposed on the first substrate side being patterned in accordance with a design that is the inverse of that of the patterned face of the first substrate, and removing the first substrate. The intermediate layer is anisotropically etched from the first face of the intermediate layer, and at least part of the thickness of the layer to be patterned is etched, patterning a face of the layer to be patterned in accordance with the design of the first face of the intermediate layer.

公开(公告)号：US11165005B2

公开(公告)日：2021-11-02

申请号：US16342446

申请日：2017-10-16

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Adrien Gasse ,  David Henry ,  Bertrand Chambion

IPC: H01L33/62 ,  H01L31/02 ,  H01L31/18 ,  H01L33/00 ,  H01L25/16

Abstract: The invention relates to a method for producing a first microelectronic chip including a layer of interest having a connection face, intended to be hybridized with a second microelectronic chip. The method including depositing a layer of adhesive on a face of the layer of interest opposite to the first connection face and fastening a handle layer to the layer of adhesive. The method also includes, prior to the steps of depositing the adhesive and fastening the handle layer, defining, on the one hand, a maximum thickness eccmax and a minimum value Eccmin and a maximum value Eccmax of the Young's modulus for the layer of adhesive, and, on the other hand, the minimum thickness ecpmin for the handle layer.

公开(公告)号：US11094742B2

公开(公告)日：2021-08-17

申请号：US16851165

申请日：2020-04-17

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Adrien Gasse ,  Ludovic Dupre ,  Marion Volpert

IPC: H01L27/15 ,  H01L33/00 ,  H01L27/144 ,  H01L31/0224 ,  H01L31/0232 ,  H01L31/18 ,  H01L33/38 ,  H01L33/50

Abstract: A method for producing a photo-emitting and/or photo-receiving device with a metal optical separation grid, comprising at least: producing at least one photo-emitting and/or photo-receiving component, wherein at least one first metal electrode of the photo-emitting and/or photo-receiving component covers side flanks of at least one semiconductor stack of the photo-emitting and/or photo-receiving component and extends to at least one emitting and/or receiving face of the photo-emitting and/or photo-receiving component; treating at least one face of the first metal electrode located at the emitting and/or receiving face, rendering wettable said face of the first metal electrode; producing of the metal optical separation grid on at least one support; fastening of the metal optical separation grid against said face of the first metal electrode by brazing; removing the support.

公开(公告)号：US20160155900A1

公开(公告)日：2016-06-02

申请号：US14776562

申请日：2014-03-14

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Hubert Bono ,  Bernard Andre ,  Adrien Gasse

IPC: H01L33/32 ,  H01L33/64 ,  H01L33/08 ,  H01L33/46 ,  H01L33/50

CPC classification number: H01L33/32 ,  H01L27/156 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/18 ,  H01L33/46 ,  H01L33/502 ,  H01L33/505 ,  H01L33/52 ,  H01L33/54 ,  H01L33/641 ,  H01L33/642 ,  H01L2933/0025 ,  H01L2933/0033 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0075

Abstract: The invention relates to a process for manufacturing light-emitting diodes comprising the following steps: a) forming light-emitting diodes (5) on a silicon layer (1) of an SOI wafer (1, 2, 3), said layer resting on a carrier (2, 3); b) bonding, on the light-emitting diode side, a silicon wafer forming a cap (7) equipped with a void facing each light-emitting diode; c) thinning the silicon wafer to form an aperture facing each light-emitting diode; d) filling each aperture with a transparent material (21, 23); and e) at least partially removing the carrier of the SOI wafer (3) and producing connecting and heat-sinking metallisations.

Abstract translation: 本发明涉及一种制造发光二极管的方法，包括以下步骤：a）在SOI晶片（1,2,3）的硅层（1）上形成发光二极管（5），所述层位于 载体（2,3）; b）在发光二极管侧接合形成具有面向每个发光二极管的空隙的帽（7）的硅晶片; c）使硅晶片变薄以形成面对每个发光二极管的孔; d）用透明材料（21,23）填充每个孔; 以及e）至少部分去除SOI晶片（3）的载体并产生连接和散热金属化。

公开(公告)号：US11581464B2

公开(公告)日：2023-02-14

申请号：US17221344

申请日：2021-04-02

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Adrien Gasse ,  Ludovic Dupre ,  Marianne Consonni

IPC: H01L33/62 ,  H01L33/00 ,  H01L25/16 ,  H01L31/02 ,  H01L31/101 ,  H01L31/18

Abstract: Photo-emitting and/or photo-receiving diode array device, comprising: a stack of first and second semiconductor layers doped according to different types; first trenches passing through the stack and surrounding a region of the stack wherein several diodes are formed; dielectric portions arranged in the first trenches and covering lateral flanks of said region over the entire thickness of the second layer and a first part of the thickness of the first layer; first electrically conductive portions arranged in the first trenches and covering the lateral flanks of said region over a second part of the thickness of the first layer, and forming first electrodes of the diodes of said region; at least one second trench partially passing through the first layer and separating the portions of the first layer from the diodes of said region.