公开(公告)号：US20150079772A1

公开(公告)日：2015-03-19

申请号：US14391865

申请日：2013-04-08

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  S'TILE

发明人： Jean-Paul Garandet ,  Virginie Brize ,  Etienne Pihan ,  Alain Straboni ,  Florent Dupont

IPC分类号： H01L21/02

CPC分类号： H01L21/02667 ,  C30B1/02 ,  C30B13/02 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02612 ,  H01L21/02628 ,  H01L31/03682 ,  H01L31/182 ,  H01L31/1872 ,  Y02E10/546 ,  Y02P70/521

摘要： The present invention relates to a method for forming a crystallised silicon layer made up of grains having an average size of no less than 20 μm, including at least the steps that comprise: (1) providing a layer of silicon to be (re)crystallised, the average grain size of which is less than 10 μm; (2) placing said layer of silicon to be (re)crystallised in contact with a liquid composition at least partially made up of a metal solvent; and (3) exposing the assembly to a thermal treatment suitable for (re)crystallising said layer of silicon with the expected grain size, characterised in that said thermal treatment includes heating the assembly made up of the layer of silicon in contact with said liquid composition to a temperature that is lower than 1410° C. and at least equal to the eutectic temperature in the solvent-silicon phase diagram.

摘要翻译： 本发明涉及一种形成由平均粒径不小于20μm的晶粒构成的结晶硅层的方法，至少包括以下步骤：（1）提供待重结晶的硅层 其平均粒径小于10μm; （2）将所述硅层重新结晶化，至少部分地由金属溶剂组成的液体组合物接触; 和（3）将所述组件暴露于适合于使所述硅的所述硅层结晶的预热晶粒度的热处理，其特征在于，所述热处理包括加热由与所述液体组合物接触的硅层组成的组件 达到低于1410℃的温度，并且至少等于溶剂 - 硅相图中的共晶温度。

公开(公告)号：US09230806B2

公开(公告)日：2016-01-05

申请号：US14391865

申请日：2013-04-08

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  S'TILE

发明人： Jean-Paul Garandet ,  Virginie Brize ,  Etienne Pihan ,  Alain Straboni ,  Florent Dupont

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L21/02 ,  C30B1/02 ,  C30B29/06 ,  H01L31/18 ,  H01L31/0368

CPC分类号： H01L21/02667 ,  C30B1/02 ,  C30B13/02 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02612 ,  H01L21/02628 ,  H01L31/03682 ,  H01L31/182 ,  H01L31/1872 ,  Y02E10/546 ,  Y02P70/521

摘要： The present invention relates to a method for forming a crystallized silicon layer made up of grains having an average size of no less than 20 μm, including at least the steps that comprise: (1) providing a layer of silicon to be (re)crystallized, the average grain size of which is less than 10 μm; (2) placing said layer of silicon to be (re)crystallized in contact with a liquid composition at least partially made up of a metal solvent; and (3) exposing the assembly to a thermal treatment suitable for (re)crystallizing said layer of silicon with the expected grain size, characterized in that said thermal treatment includes heating the assembly made up of the layer of silicon in contact with said liquid composition to a temperature that is lower than 1410° C. and at least equal to the eutectic temperature in the solvent-silicon phase diagram.

摘要翻译： 本发明涉及一种形成由平均粒径不小于20μm的晶粒构成的结晶硅层的方法，至少包括以下步骤：（1）提供待重结晶的硅层 其平均粒径小于10μm; （2）将所述硅层重新结晶化，至少部分地由金属溶剂组成的液体组合物接触; 和（3）将所述组件暴露于适于以所述预期晶粒尺寸（重新）结晶所述硅层的热处理，其特征在于，所述热处理包括加热由与所述液体组合物接触的硅层组成的组件 达到低于1410℃的温度，并且至少等于溶剂 - 硅相图中的共晶温度。