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公开(公告)号：US09230806B2
公开(公告)日：2016-01-05
申请号：US14391865
申请日：2013-04-08
CPC分类号： H01L21/02667 , C30B1/02 , C30B13/02 , C30B29/06 , H01L21/02532 , H01L21/02595 , H01L21/02612 , H01L21/02628 , H01L31/03682 , H01L31/182 , H01L31/1872 , Y02E10/546 , Y02P70/521
摘要： The present invention relates to a method for forming a crystallized silicon layer made up of grains having an average size of no less than 20 μm, including at least the steps that comprise: (1) providing a layer of silicon to be (re)crystallized, the average grain size of which is less than 10 μm; (2) placing said layer of silicon to be (re)crystallized in contact with a liquid composition at least partially made up of a metal solvent; and (3) exposing the assembly to a thermal treatment suitable for (re)crystallizing said layer of silicon with the expected grain size, characterized in that said thermal treatment includes heating the assembly made up of the layer of silicon in contact with said liquid composition to a temperature that is lower than 1410° C. and at least equal to the eutectic temperature in the solvent-silicon phase diagram.
摘要翻译： 本发明涉及一种形成由平均粒径不小于20μm的晶粒构成的结晶硅层的方法，至少包括以下步骤：（1）提供待重结晶的硅层 其平均粒径小于10μm; （2）将所述硅层重新结晶化，至少部分地由金属溶剂组成的液体组合物接触; 和（3）将所述组件暴露于适于以所述预期晶粒尺寸（重新）结晶所述硅层的热处理，其特征在于，所述热处理包括加热由与所述液体组合物接触的硅层组成的组件 达到低于1410℃的温度，并且至少等于溶剂 - 硅相图中的共晶温度。
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公开(公告)号：US20150079772A1
公开(公告)日：2015-03-19
申请号：US14391865
申请日：2013-04-08
IPC分类号： H01L21/02
CPC分类号： H01L21/02667 , C30B1/02 , C30B13/02 , C30B29/06 , H01L21/02532 , H01L21/02595 , H01L21/02612 , H01L21/02628 , H01L31/03682 , H01L31/182 , H01L31/1872 , Y02E10/546 , Y02P70/521
摘要： The present invention relates to a method for forming a crystallised silicon layer made up of grains having an average size of no less than 20 μm, including at least the steps that comprise: (1) providing a layer of silicon to be (re)crystallised, the average grain size of which is less than 10 μm; (2) placing said layer of silicon to be (re)crystallised in contact with a liquid composition at least partially made up of a metal solvent; and (3) exposing the assembly to a thermal treatment suitable for (re)crystallising said layer of silicon with the expected grain size, characterised in that said thermal treatment includes heating the assembly made up of the layer of silicon in contact with said liquid composition to a temperature that is lower than 1410° C. and at least equal to the eutectic temperature in the solvent-silicon phase diagram.
摘要翻译： 本发明涉及一种形成由平均粒径不小于20μm的晶粒构成的结晶硅层的方法，至少包括以下步骤：（1）提供待重结晶的硅层 其平均粒径小于10μm; （2）将所述硅层重新结晶化，至少部分地由金属溶剂组成的液体组合物接触; 和（3）将所述组件暴露于适合于使所述硅的所述硅层结晶的预热晶粒度的热处理，其特征在于，所述热处理包括加热由与所述液体组合物接触的硅层组成的组件 达到低于1410℃的温度，并且至少等于溶剂 - 硅相图中的共晶温度。
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3.发明授权公开(公告)号：US10125430B2
公开(公告)日：2018-11-13
申请号：US14894385
申请日：2014-05-26
发明人： Etienne Pihan , Vanessa Amaral De Oliveira , Denis Camel , Denis Chavrier , Gautier Fortin , Anis Jouini , Benoit Marie , Nelly Plassat
摘要： A method for manufacturing a silicon cylinder by growth on seeds in a directed solidification furnace, including at least the following steps: (i) providing a crucible having a longitudinal axis (Z), in which the bottom is covered with a layer of seeds of monocrystalline silicon in a right prism shape; and (ii) proceeding with directed solidification of silicon by growth on seeds, in a direction of growth that is co-linear with the axis (Z) and with a concave solidification front, spatially or temporally; characterized in that the layer in step (i) of: one or more central seeds Gc; and one or more peripheral seeds Gp contiguous to the seed(s) Gc, the peripheral seeds Gp having a specific size.
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公开(公告)号：US09373504B2
公开(公告)日：2016-06-21
申请号：US14403915
申请日：2013-05-22
发明人： Jean-Paul Garandet , Etienne Pihan
IPC分类号： H01L21/02 , C30B19/12 , C30B25/18 , C30B25/20 , C30B29/06 , H01L21/306 , H01L21/3065
CPC分类号： H01L21/02636 , C30B19/12 , C30B25/186 , C30B25/20 , C30B29/06 , H01L21/02439 , H01L21/02513 , H01L21/02532 , H01L21/02634 , H01L21/02639 , H01L21/30604 , H01L21/3065
摘要： The present invention relates to a method for manufacturing an epitactic silicon layer made up of crystallites with a size no lower than 20 μm, including: providing a layer of crystallized silicon the surface of which, being inhomogeneous in terms of the size of the crystallites, is made up of large crystallites with a size no lower than 20 μm, and small crystallites of a smaller size; forming, on the surface of the inhomogeneous silicon layer, a layer of at least one non-nucleating material for the silicon, the thickness of which is adjusted such to cover the entire outer surface of the small crystallites, while leaving all or part of the outer surface of the large crystallites accessible; and carrying out epitaxial growth of a silicon layer on the surface of the assembly obtained at the end of step, under conditions that are suitable for forming the expected epitactic layer.
摘要翻译： 本发明涉及一种制造尺寸不小于20μm的微晶构成的中空硅层的方法，包括：提供一层结晶硅，其表面在微晶尺寸方面不均匀， 由尺寸不小于20μm的大晶体和较小尺寸的小晶体构成; 在不均匀硅层的表面上形成用于硅的至少一种非成核材料的层，其厚度被调节以覆盖小微晶的整个外表面，同时留下全部或部分 大晶粒的外表面可达; 并且在适于形成预期的中空层的条件下，在步骤结束时获得的组件的表面上进行硅层的外延生长。
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公开(公告)号：US20150155168A1
公开(公告)日：2015-06-04
申请号：US14403915
申请日：2013-05-22
发明人： Jean-Paul Garandet , Etienne Pihan
IPC分类号： H01L21/02 , H01L21/3065 , H01L21/306
CPC分类号： H01L21/02636 , C30B19/12 , C30B25/186 , C30B25/20 , C30B29/06 , H01L21/02439 , H01L21/02513 , H01L21/02532 , H01L21/02634 , H01L21/02639 , H01L21/30604 , H01L21/3065
摘要： The present invention relates to a method for manufacturing an epitactic silicon layer made up of crystallites with a size no lower than 20 μm, including: providing a layer of crystallised silicon the surface of which, being inhomogeneous in terms of the size of the crystallites, is made up of large crystallites with a size no lower than 20 μm, and small crystallites of a smaller size; forming, on the surface of the inhomogeneous silicon layer, a layer of at least one non-nucleating material for the silicon, the thickness of which is adjusted such to cover the entire outer surface of the small crystallites, while leaving all or part of the outer surface of the large crystallites accessible; and carrying out epitaxial growth of a silicon layer on the surface of the assembly obtained at the end of step, under conditions that are suitable for forming the expected epitactic layer.
摘要翻译： 本发明涉及一种制造尺寸不小于20μm的微晶构成的中空硅层的方法，包括：提供一层结晶硅，其表面在微晶尺寸方面不均匀， 由尺寸不小于20μm的大晶体和较小尺寸的小晶体构成; 在不均匀硅层的表面上形成用于硅的至少一种非成核材料的层，其厚度被调节以覆盖小微晶的整个外表面，同时留下全部或部分 大晶粒的外表面可达; 并且在适于形成预期的中空层的条件下，在步骤结束时获得的组件的表面上进行硅层的外延生长。
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公开(公告)号：US10131999B2
公开(公告)日：2018-11-20
申请号：US14894380
申请日：2014-05-26
摘要： A method for producing a silicon ingot, provided with symmetrical grain boundaries, including at least steps made of: (i) providing crucible with longitudinal axis, bottom of which includes a paving formed from monocrystalline cuboid silicon seeds with a square or rectangular base and arranged contiguously, the paving, when viewed according to axis, being in shape of a grid of orthogonal directions (x) and (y) parallel to edges of seeds; and (ii) proceeding with controlled solidification of silicon by growth on seeds in a growth direction collinear to axis; wherein paving in step (i) is produced from identical silicon seeds, with two seeds contiguous in direction (x) being images of each other by turning axis (y) and two seeds contiguous in direction (y) being images of each other by turning axis (x), and misorientation 2θ between crystalline arrays of two contiguous seeds being greater than 4°.
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7.发明申请Method of Forming a Crystallized Silicon Layer on the Surface of a Plurality of Substrates 审中-公开在多个基板的表面上形成结晶硅层的方法公开(公告)号：US20140261156A1
公开(公告)日：2014-09-18
申请号：US14349987
申请日：2012-10-02
CPC分类号： C30B19/02 , C30B19/062 , C30B29/06 , H01L21/02381 , H01L21/02532 , H01L21/02625 , H01L21/02628
摘要： The present invention concerns a method of forming, by liquid phase epitaxial growth, on the surface of a plurality of substrates, a layer of crystallised silicon having a grain size greater than or equal to 200 μm, comprising at least the steps consisting of: (i) arranging a liquid bath formed from a liquid metal solvent phase in which liquid silicon is homogeneously dispersed; (ii) immersing, in the bath of step (i), said substrates (1), in such a way that each of the surfaces of the substrates (1) that need to be coated is in contact with the liquid bath, said surfaces being arranged parallel to one another, and perpendicularly to the interface (3) of the liquid bath (2) and the gas atmosphere (4) contiguous to said liquid bath or according to an inclination angle of at least 45° in relation to said interface (3); (iii) imposing, on the whole of step (ii), conditions conducive to the vaporisation of said liquid solvent phase and to the establishing of a natural convection movement of the liquid bath in the vicinity of the surfaces to be coated of the substrates, which are held in fixed position; and (iv) recovering the substrates coated with the crystallised silicon layer formed at the end of step (iii).
摘要翻译： 本发明涉及通过液相外延生长在多个基板的表面上形成具有大于或等于200μm的晶粒尺寸的结晶硅层的方法，至少包括以下步骤：（ i）布置由液态硅均匀分散的液态金属溶剂相形成的液浴; （ii）将所述基板（1）浸入步骤（i）的槽中，使得需要涂布的基板（1）的每个表面与液槽接触，所述表面 彼此平行并且垂直于液槽（2）的界面（3）和与所述液槽相邻的气体气氛（4），或者相对于所述界面的至少45°的倾斜角度 （3）; （iii）在整个步骤（ii）中施加有助于所述液体溶剂相的蒸发的条件以及在待涂布的表面附近建立液槽的自然对流运动， 固定位置; 和（iv）回收涂有步骤（iii）末端形成的结晶硅层的基材。
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