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1.发明授权Photo-diode and transistor semiconductor radiation detector with the photodiode biased slightly below its breakdown voltage 失效光电二极管和晶体管半导体辐射检测器，其光电二极管偏压低于其断电电压
公开(公告)号：US3452206A
公开(公告)日：1969-06-24
申请号：US3452206D
申请日：1967-06-15
Applicant: COMP GENERALE ELECTRICITE
Inventor： BIET JEAN-PIERRE , BENOIT JACQUES L
IPC: H01L27/07 , H01L27/144 , H01L27/146 , H01L31/00 , H01J39/00 , H01J39/12
CPC classification number: H01L27/14643 , H01L27/0761 , H01L27/1446 , H01L31/00
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