公开(公告)号：US20230116816A1

公开(公告)日：2023-04-13

申请号：US17961897

申请日：2022-10-07

Applicant: CORNING INCORPORATED

Inventor： Yen-Kai Huang ,  Bernhard Anton Moegele ,  Uwe Stute ,  Ralf Joachim Terbrueggen

IPC: C03B33/02 ,  C03B33/08 ,  B23K26/21

Abstract: A method including emitting a laser beam toward a transparent workpiece such that portions of the laser beam pass through openings of a beam shaping structure and form corresponding laser beam focal lines across the transparent workpiece. The laser beam focal lines forming a plurality of defects in the transparent workpiece disposed along a contour line. The method further including separating the transparent workpiece along the contour line to provide a first workpiece section and a second workpiece section and a cut edge surface on each of the first and second workpiece sections, each cut edge including a defect region and an unaffected region. The defect region having a higher surface roughness than the unaffected region and a minimum distance of the unaffected region to the first major surface being about 20% or less of a thickness between the first major surface and the second major surface.

公开(公告)号：US20240371693A1

公开(公告)日：2024-11-07

申请号：US18652102

申请日：2024-05-01

Applicant: CORNING INCORPORATED

Inventor： Andreas Simon Gaab ,  Nicolai Martin Haenel ,  Roni Daniel Levi ,  Bernhard Anton Moegele ,  Ralf Joachim Terbrueggen

IPC: H01L21/768 ,  H01L21/20 ,  H01L21/683

Abstract: Methods, systems, and devices implementing techniques for dicing bonded wafers using laser technologies are described. A bonded wafer includes an optically transmissive substrate bonded with a semiconductor substrate. The optically transmissive substrate is irradiated using a first laser technology associated with perforating the optically transmissive substrate to form damage tracks. The semiconductor substrate is irradiated using a second laser technology associated with forming damage regions within the semiconductor substrate. The damage regions of the semiconductor substrate are aligned with the damage tracks of the optically transmissive substrate during irradiation of the semiconductor substrate or the optically transmissive substrate, forming an aligned region through the bonded wafer with a relatively high likelihood for fracture. After irradiating the optically transmissive substrate and the semiconductor substrate, one or more forces may be applied to the bonded wafer to separate the bonded wafer into respective dies along the aligned region.