TECHNIQUES FOR DICING BONDED WAFERS USING LASER TECHNOLOGIES

    公开(公告)号:US20240371693A1

    公开(公告)日:2024-11-07

    申请号:US18652102

    申请日:2024-05-01

    Abstract: Methods, systems, and devices implementing techniques for dicing bonded wafers using laser technologies are described. A bonded wafer includes an optically transmissive substrate bonded with a semiconductor substrate. The optically transmissive substrate is irradiated using a first laser technology associated with perforating the optically transmissive substrate to form damage tracks. The semiconductor substrate is irradiated using a second laser technology associated with forming damage regions within the semiconductor substrate. The damage regions of the semiconductor substrate are aligned with the damage tracks of the optically transmissive substrate during irradiation of the semiconductor substrate or the optically transmissive substrate, forming an aligned region through the bonded wafer with a relatively high likelihood for fracture. After irradiating the optically transmissive substrate and the semiconductor substrate, one or more forces may be applied to the bonded wafer to separate the bonded wafer into respective dies along the aligned region.

    METHODS FOR LINEAR LASER PROCESSING OF TRANSPARENT WORKPIECES USING PULSED LASER BEAM FOCAL LINES AND CHEMICAL ETCHING SOLUTIONS

    公开(公告)号:US20200283325A1

    公开(公告)日:2020-09-10

    申请号:US16809960

    申请日:2020-03-05

    Abstract: A method for processing a transparent workpiece includes forming a closed contour in the transparent workpiece. The closed contour includes a plurality of defects in the transparent workpiece and has a rectilinear shape. Forming the closed contour includes directing a pulsed laser beam through an aspheric optical element and into the transparent workpiece to generate an induced absorption within the transparent workpiece and produce a defect within the transparent workpiece. Forming the closed contour also includes translating the pulsed laser beam focal line along a closed contour line having the rectilinear shape, thereby laser forming the plurality of defects of the closed contour. In addition, the method for processing the transparent workpiece includes etching the transparent workpiece with a chemical etching solution to separate a portion of the transparent workpiece along the closed contour, thereby forming an aperture extending through the transparent workpiece.

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