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公开(公告)号:US20160211420A1
公开(公告)日:2016-07-21
申请号:US14602040
申请日:2015-01-21
Applicant: CREE, INC.
Inventor: MATTHEW DONOFRIO , PRITISH KAR , STEN HEIKMAN , HARSHAD GOLAKIA , RAJEEV ACHARYA , YUVARAJ DORA
CPC classification number: H01L33/46 , H01L33/0095 , H01L33/14 , H01L33/38 , H01L33/42 , H01L2933/0016 , H01L2933/0025
Abstract: Simplified LED chip architectures or chip builds are disclosed that can result in simpler manufacturing processes using fewer steps. The LED structure can have fewer layers than conventional LED chips with the layers arranged in different ways for efficient fabrication and operation. The LED chips can comprise an active LED structure. A dielectric reflective layer is included adjacent to one of the oppositely doped layers. A metal reflective layer is on the dielectric reflective layer, wherein the dielectric and metal reflective layers extend beyond the edge of said active region. By extending the dielectric layer, the LED chips can emit with more efficiency by reflecting more LED light to emit in the desired direction. By extending the metal reflective layer beyond the edge of the active region, the metal reflective layer can serve as a current spreading layer and barrier, in addition to reflecting LED light to emit in the desired direction. The LED chips can also comprise self-aligned and self-limiting features that simplify etching processes during fabrication.
Abstract translation: 公开了简化的LED芯片架构或芯片构造,其可以使用更少的步骤导致更简单的制造过程。 LED结构可以具有比常规LED芯片更少的层,其中层以不同的方式布置以有效地制造和操作。 LED芯片可以包括有源LED结构。 电介质反射层包含在相邻掺杂层之一附近。 金属反射层在介电反射层上,其中电介质和金属反射层延伸超过所述有源区的边缘。 通过延伸电介质层,LED芯片可以通过反射更多的LED光以期望的方向发射而以更高的效率发射。 通过将金属反射层延伸超过有源区的边缘,金属反射层可以用作电流扩散层和势垒,除了反射LED光以期望的方向发射。 LED芯片还可以包括自制和自限制特征,其简化制造期间的蚀刻工艺。