Abstract:
A high efficiency LED chip is disclosed that comprises an active LED structure comprising an active layer between two oppositely doped layers. A first reflective layer can be provided adjacent to one of the oppositely doped layers, with the first layer comprising a material with a different index of refraction than the active LED structure. The difference in IR between the active LED structure and the first reflective layer increases TIR of light at the junction. In some embodiments the first reflective layer can comprise an IR lower than the semiconductor material, increasing the amount of light that can experience TIR. Some embodiments of LED chips according to the present invention can also comprise a second reflective layer or metal layer on and used in conjunction with the first reflective layer such that light passing through the first reflective layer can be reflected by the second reflective layer.
Abstract:
LED packages are disclosed that are compact and efficiently emit light, and can comprise encapsulants with planar surfaces that refract and/or reflect light within the package encapsulant. The packages can comprise a submount with one or more LEDs, and a blanket conversion material layer on the LEDs and the submount. The encapsulant can be on the submount, over the LEDs, and light reflected within the encapsulant will reach the conversion material, where it is absorbed and emitted omnidirectionally. Reflected light can now escape the encapsulant, allowing for efficient emission and a broader emission profile, when compared to conventional packages with hemispheric encapsulants or lenses. In certain embodiments, the LED package provides a higher chip area to LED package area ratio. By using an encapsulant with planar surfaces, the LED package can provide unique dimensional relationships between the various features and the LED package ratios, enabling more flexibility with different applications.
Abstract:
Simplified LED chip architectures or chip builds are disclosed that can result in simpler manufacturing processes using fewer steps. The LED structure can have fewer layers than conventional LED chips with the layers arranged in different ways for efficient fabrication and operation. The LED chips can comprise an active LED structure. A dielectric reflective layer is included adjacent to one of the oppositely doped layers. A metal reflective layer is on the dielectric reflective layer, wherein the dielectric and metal reflective layers extend beyond the edge of said active region. By extending the dielectric layer, the LED chips can emit with more efficiency by reflecting more LED light to emit in the desired direction. By extending the metal reflective layer beyond the edge of the active region, the metal reflective layer can serve as a current spreading layer and barrier, in addition to reflecting LED light to emit in the desired direction. The LED chips can also comprise self-aligned and self-limiting features that simplify etching processes during fabrication.
Abstract:
LED packages are disclosed that are compact and efficiently emit light, and can comprise encapsulants with planar surfaces that refract and/or reflect light within the package encapsulant. The packages can comprise a submount with one or a plurality of LEDs. In packages with a plurality of LEDs, each LED can emit the same or different wavelengths of light. A blanket conversion material layer can be included on at least some of the LEDs and the submount. The encapsulant with planar surfaces can be on the submount, over at least some of the LEDs, with the planar surfaces causing total internal reflection of light within the package. TIR light within the encapsulant can reach the conversion material, where it can be absorbed and emitted omnidirectionally. TIR light can now escape from the encapsulant and allow for efficient emission and a broader emission profile when compared to conventional packages with hemispheric encapsulants.