公开(公告)号：US20220367696A1

公开(公告)日：2022-11-17

申请号：US17321992

申请日：2021-05-17

Applicant: CREE, INC.

Inventor： Thomas J. SMITH, JR. ,  Saptharishi SRIRAM ,  Charles W. RICHARDS, IV

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/205 ,  H01L29/40 ,  H01L21/76 ,  H01L21/765 ,  H01L29/66 ,  H02H3/06 ,  H02H3/12

Abstract: An apparatus includes a substrate; a group III-Nitride barrier layer; a source electrically coupled to the group III-Nitride barrier layer; a gate on the group III-Nitride barrier layer; a drain electrically coupled to the group III-Nitride barrier layer; a p-region being arranged at or below the group III-Nitride barrier layer; and a recovery enhancement circuit configured to reduce an impact of an overload received by the gate. Additionally, at least a portion of the p-region is arranged vertically below at least one of the following: the source, the gate, an area between the gate and the drain.