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公开(公告)号：US09228855B2
公开(公告)日：2016-01-05
申请号：US13787585
申请日：2013-03-06
发明人： Bertrand F. Cambou , Douglas J. Lee , Ken Mackay , Barry Hoberman
CPC分类号： G01D5/12 , G01B7/30 , G01C17/02 , G01D5/16 , G01R33/0029 , G01R33/096 , G01R33/098 , G11C11/1659 , G11C11/1673 , G11C11/1675
摘要： An apparatus includes circuits, a field line configured to generate a magnetic field based on an input, a sensing module configured to determine a parameter of each circuit, and a magnetic field direction determination module configured to determine an angular orientation of the apparatus relative to an external magnetic field based on the parameter. Each circuit includes multiple magnetic tunnel junctions. Each magnetic tunnel junction includes a storage layer having a storage magnetization direction and a sense layer having a sense magnetization direction configured based on the magnetic field. Each magnetic tunnel junction is configured such that the sense magnetization direction and a resistance of the magnetic tunnel junction vary based on the external magnetic field. The parameter varies based on the resistances of the multiple magnetic tunnel junctions. The magnetic field direction determination module is implemented in at least one of a memory or a processing device.
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公开(公告)号：US09395209B2
公开(公告)日：2016-07-19
申请号：US14552326
申请日：2014-11-24
发明人： Bertrand F. Cambou , Douglas J. Lee , Ken Mackay , Barry Hoberman
CPC分类号： G01D5/12 , G01B7/30 , G01C17/02 , G01D5/16 , G01R33/0029 , G01R33/096 , G01R33/098 , G11C11/1659 , G11C11/1673 , G11C11/1675
摘要： An apparatus includes circuits, a field line configured to generate a magnetic field based on an input, a sensing module configured to determine a parameter of each circuit, and a magnetic field direction determination module configured to determine an angular orientation of the apparatus relative to an external magnetic field based on the parameter. Each circuit includes multiple magnetic tunnel junctions. Each magnetic tunnel junction includes a storage layer having a storage magnetization direction and a sense layer having a sense magnetization direction configured based on the magnetic field. Each magnetic tunnel junction is configured such that the sense magnetization direction and a resistance of the magnetic tunnel junction vary based on the external magnetic field. The parameter varies based on the resistances of the multiple magnetic tunnel junctions. The magnetic field direction determination module is implemented in at least one of a memory or a processing device.
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公开(公告)号：US20150077095A1
公开(公告)日：2015-03-19
申请号：US14552302
申请日：2014-11-24
发明人： Bertrand F. Cambou , Douglas J. Lee , Ken Mackay , Barry Hoberman
CPC分类号： G01D5/12 , G01B7/30 , G01C17/02 , G01D5/16 , G01R33/0029 , G01R33/096 , G01R33/098 , G11C11/1659 , G11C11/1673 , G11C11/1675
摘要： An apparatus includes circuits, a field line configured to generate a magnetic field based on an input, a sensing module configured to determine a parameter of each circuit, and a magnetic field direction determination module configured to determine an angular orientation of the apparatus relative to an external magnetic field based on the parameter. Each circuit includes multiple magnetic tunnel junctions. Each magnetic tunnel junction includes a storage layer having a storage magnetization direction and a sense layer having a sense magnetization direction configured based on the magnetic field. Each magnetic tunnel junction is configured such that the sense magnetization direction and a resistance of the magnetic tunnel junction vary based on the external magnetic field. The parameter varies based on the resistances of the multiple magnetic tunnel junctions. The magnetic field direction determination module is implemented in at least one of a memory or a processing device.
摘要翻译： 一种装置包括电路，被配置为基于输入产生磁场的场线，被配置为确定每个电路的参数的感测模块以及被配置为确定所述装置相对于所述电路的角度定向的磁场方向确定模块 基于参数的外部磁场。 每个电路包括多个磁隧道结。 每个磁性隧道结包括具有存储磁化方向的存储层和具有基于磁场配置的感测磁化方向的感测层。 每个磁性隧道结被构造成使得感应磁化方向和磁性隧道结的电阻基于外部磁场而变化。 该参数根据多个磁隧道结的电阻而变化。 磁场方向确定模块在存储器或处理装置中的至少一个中实现。
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公开(公告)号：US20150077098A1
公开(公告)日：2015-03-19
申请号：US14552326
申请日：2014-11-24
发明人： Bertrand F. Cambou , Douglas J. Lee , Ken Mackay , Barry Hoberman
CPC分类号： G01D5/12 , G01B7/30 , G01C17/02 , G01D5/16 , G01R33/0029 , G01R33/096 , G01R33/098 , G11C11/1659 , G11C11/1673 , G11C11/1675
摘要： An apparatus includes circuits, a field line configured to generate a magnetic field based on an input, a sensing module configured to determine a parameter of each circuit, and a magnetic field direction determination module configured to determine an angular orientation of the apparatus relative to an external magnetic field based on the parameter. Each circuit includes multiple magnetic tunnel junctions. Each magnetic tunnel junction includes a storage layer having a storage magnetization direction and a sense layer having a sense magnetization direction configured based on the magnetic field. Each magnetic tunnel junction is configured such that the sense magnetization direction and a resistance of the magnetic tunnel junction vary based on the external magnetic field. The parameter varies based on the resistances of the multiple magnetic tunnel junctions. The magnetic field direction determination module is implemented in at least one of a memory or a processing device.
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公开(公告)号：US20130241536A1
公开(公告)日：2013-09-19
申请号：US13787585
申请日：2013-03-06
发明人： Bertrand F. Cambou , Douglas J. Lee , Ken Mackay , Barry Hoberman
IPC分类号： G01B7/30
CPC分类号： G01D5/12 , G01B7/30 , G01C17/02 , G01D5/16 , G01R33/0029 , G01R33/096 , G01R33/098 , G11C11/1659 , G11C11/1673 , G11C11/1675
摘要： An apparatus includes circuits, a field line configured to generate a magnetic field based on an input, a sensing module configured to determine a parameter of each circuit, and a magnetic field direction determination module configured to determine an angular orientation of the apparatus relative to an external magnetic field based on the parameter. Each circuit includes multiple magnetic tunnel junctions. Each magnetic tunnel junction includes a storage layer having a storage magnetization direction and a sense layer having a sense magnetization direction configured based on the magnetic field. Each magnetic tunnel junction is configured such that the sense magnetization direction and a resistance of the magnetic tunnel junction vary based on the external magnetic field. The parameter varies based on the resistances of the multiple magnetic tunnel junctions. The magnetic field direction determination module is implemented in at least one of a memory or a processing device.
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公开(公告)号：US09395210B2
公开(公告)日：2016-07-19
申请号：US14552363
申请日：2014-11-24
发明人： Bertrand F. Cambou , Douglas J. Lee , Ken Mackay , Barry Hoberman
CPC分类号： G01D5/12 , G01B7/30 , G01C17/02 , G01D5/16 , G01R33/0029 , G01R33/096 , G01R33/098 , G11C11/1659 , G11C11/1673 , G11C11/1675
摘要： An apparatus includes circuits, a field line configured to generate a magnetic field based on an input, a sensing module configured to determine a parameter of each circuit, and a magnetic field direction determination module configured to determine an angular orientation of the apparatus relative to an external magnetic field based on the parameter. Each circuit includes multiple magnetic tunnel junctions. Each magnetic tunnel junction includes a storage layer having a storage magnetization direction and a sense layer having a sense magnetization direction configured based on the magnetic field. Each magnetic tunnel junction is configured such that the sense magnetization direction and a resistance of the magnetic tunnel junction vary based on the external magnetic field. The parameter varies based on the resistances of the multiple magnetic tunnel junctions. The magnetic field direction determination module is implemented in at least one of a memory or a processing device.
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公开(公告)号：US20150077097A1
公开(公告)日：2015-03-19
申请号：US14552363
申请日：2014-11-24
发明人： Bertrand F. Cambou , Douglas J. Lee , Ken Mackay , Barry Hoberman
CPC分类号： G01D5/12 , G01B7/30 , G01C17/02 , G01D5/16 , G01R33/0029 , G01R33/096 , G01R33/098 , G11C11/1659 , G11C11/1673 , G11C11/1675
摘要： An apparatus includes circuits, a field line configured to generate a magnetic field based on an input, a sensing module configured to determine a parameter of each circuit, and a magnetic field direction determination module configured to determine an angular orientation of the apparatus relative to an external magnetic field based on the parameter. Each circuit includes multiple magnetic tunnel junctions. Each magnetic tunnel junction includes a storage layer having a storage magnetization direction and a sense layer having a sense magnetization direction configured based on the magnetic field. Each magnetic tunnel junction is configured such that the sense magnetization direction and a resistance of the magnetic tunnel junction vary based on the external magnetic field. The parameter varies based on the resistances of the multiple magnetic tunnel junctions. The magnetic field direction determination module is implemented in at least one of a memory or a processing device.
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公开(公告)号：US09310223B2
公开(公告)日：2016-04-12
申请号：US14552338
申请日：2014-11-24
发明人： Bertrand F. Cambou , Douglas J. Lee , Ken Mackay , Barry Hoberman
CPC分类号： G01D5/12 , G01B7/30 , G01C17/02 , G01D5/16 , G01R33/0029 , G01R33/096 , G01R33/098 , G11C11/1659 , G11C11/1673 , G11C11/1675
摘要： An apparatus includes circuits, a field line configured to generate a magnetic field based on an input, a sensing module configured to determine a parameter of each circuit, and a magnetic field direction determination module configured to determine an angular orientation of the apparatus relative to an external magnetic field based on the parameter. Each circuit includes multiple magnetic tunnel junctions. Each magnetic tunnel junction includes a storage layer having a storage magnetization direction and a sense layer having a sense magnetization direction configured based on the magnetic field. Each magnetic tunnel junction is configured such that the sense magnetization direction and a resistance of the magnetic tunnel junction vary based on the external magnetic field. The parameter varies based on the resistances of the multiple magnetic tunnel junctions. The magnetic field direction determination module is implemented in at least one of a memory or a processing device.
摘要翻译： 一种装置包括电路，被配置为基于输入产生磁场的场线，被配置为确定每个电路的参数的感测模块以及被配置为确定所述装置相对于所述电路的角度定向的磁场方向确定模块 基于参数的外部磁场。 每个电路包括多个磁隧道结。 每个磁性隧道结包括具有存储磁化方向的存储层和具有基于磁场配置的感测磁化方向的感测层。 每个磁性隧道结被构造成使得感应磁化方向和磁性隧道结的电阻基于外部磁场而变化。 该参数根据多个磁隧道结的电阻而变化。 磁场方向确定模块在存储器或处理装置中的至少一个中实现。
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公开(公告)号：US09267816B2
公开(公告)日：2016-02-23
申请号：US14552302
申请日：2014-11-24
发明人： Bertrand F. Cambou , Douglas J. Lee , Ken Mackay , Barry Hoberman
CPC分类号： G01D5/12 , G01B7/30 , G01C17/02 , G01D5/16 , G01R33/0029 , G01R33/096 , G01R33/098 , G11C11/1659 , G11C11/1673 , G11C11/1675
摘要： An apparatus includes circuits, a field line configured to generate a magnetic field based on an input, a sensing module configured to determine a parameter of each circuit, and a magnetic field direction determination module configured to determine an angular orientation of the apparatus relative to an external magnetic field based on the parameter. Each circuit includes multiple magnetic tunnel junctions. Each magnetic tunnel junction includes a storage layer having a storage magnetization direction and a sense layer having a sense magnetization direction configured based on the magnetic field. Each magnetic tunnel junction is configured such that the sense magnetization direction and a resistance of the magnetic tunnel junction vary based on the external magnetic field. The parameter varies based on the resistances of the multiple magnetic tunnel junctions. The magnetic field direction determination module is implemented in at least one of a memory or a processing device.
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公开(公告)号：US20150077096A1
公开(公告)日：2015-03-19
申请号：US14552338
申请日：2014-11-24
发明人： Bertrand F. Cambou , Douglas J. Lee , Ken Mackay , Barry Hoberman
CPC分类号： G01D5/12 , G01B7/30 , G01C17/02 , G01D5/16 , G01R33/0029 , G01R33/096 , G01R33/098 , G11C11/1659 , G11C11/1673 , G11C11/1675
摘要： An apparatus includes circuits, a field line configured to generate a magnetic field based on an input, a sensing module configured to determine a parameter of each circuit, and a magnetic field direction determination module configured to determine an angular orientation of the apparatus relative to an external magnetic field based on the parameter. Each circuit includes multiple magnetic tunnel junctions. Each magnetic tunnel junction includes a storage layer having a storage magnetization direction and a sense layer having a sense magnetization direction configured based on the magnetic field. Each magnetic tunnel junction is configured such that the sense magnetization direction and a resistance of the magnetic tunnel junction vary based on the external magnetic field. The parameter varies based on the resistances of the multiple magnetic tunnel junctions. The magnetic field direction determination module is implemented in at least one of a memory or a processing device.
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