公开(公告)号：US20130182499A1

公开(公告)日：2013-07-18

申请号：US13739044

申请日：2013-01-11

Applicant: CROCUS Technology SA

Inventor： Ioan Lucian Prejbeanu ,  Ricardo Sousa

IPC: G11C11/16

CPC classification number: G11C11/1675 ,  G11C11/16 ,  G11C11/161

Abstract: The present disclosure concerns a method for writing to a MRAM cell comprising a magnetic tunnel junction formed from a storage layer having a storage magnetization; a reference layer having a reference magnetization; and a tunnel barrier layer included between the sense and storage layers; and a current line electrically connected to said magnetic tunnel junction; the method comprising: passing a heating current in the magnetic tunnel junction for heating the magnetic tunnel junction; passing a field current for switching the storage magnetization in a written direction in accordance with the polarity of the field current. The magnitude of the heating current is such that it acts as a spin polarized current and can adjust the storage magnetization; and the polarity of the heating current is such as to adjust the storage magnetization substantially towards said written direction.

Abstract translation: 本公开涉及一种用于写入到具有由具有存储磁化的存储层形成的磁性隧道结的MRAM单元的方法; 具有参考磁化的参考层; 以及包括在感测层和存储层之间的隧道势垒层; 以及电连接到所述磁性隧道结的电流线; 所述方法包括：使所述磁性隧道结中的加热电流通过以加热所述磁性隧道结; 根据励磁电流的极性，传递用于沿写入方向切换存储磁化的励磁电流。 加热电流的大小使得其作为自旋极化电流并且可以调节存储磁化强度; 并且加热电流的极性使得大致朝向所述写入方向调节存储磁化。

公开(公告)号：US09396782B2

公开(公告)日：2016-07-19

申请号：US14405909

申请日：2013-06-07

Applicant: CROCUS Technology SA

Inventor： Jérémy Alvarez-Hérault ,  Ioan Lucian Prejbeanu ,  Ricardo Sousa

IPC: G11C11/16

CPC classification number: G11C11/1675 ,  G11C11/16 ,  G11C11/161

Abstract: Method for writing to a MRAM cell including a magnetic tunnel junction including a first and second ferromagnetic layer, and a tunnel barrier layer; and a bipolar transistor in electrical connection with one end of the magnetic tunnel junction, the bipolar transistor being arranged for controlling the passing and polarity of a heating current in the magnetic tunnel junction. The method includes a sequence of writing steps, each writing step including passing the heating current in the magnetic tunnel junction such as to heat it to a high temperature threshold; and once the magnetic tunnel junction has reached the high temperature threshold, adjusting a second magnetization of the second ferromagnetic layer for writing a write data; wherein during one of the writing steps, the polarity of the heating current is reversed from one during the subsequent writing step. The method allows for an increased lifespan of the MRAM cell.

Abstract translation: 写入包括包括第一和第二铁磁层的磁性隧道结的MRAM单元和隧道势垒层的方法; 以及与磁性隧道结的一端电连接的双极晶体管，所述双极晶体管布置成用于控制磁性隧道结中的加热电流的通过和极性。 该方法包括写入步骤序列，每个写入步骤包括使加热电流传递到磁性隧道结中，以将其加热到高温阈值; 并且一旦磁性隧道结已经达到高温阈值，则调整用于写入写入数据的第二铁磁层的第二磁化强度; 其中在一个写入步骤期间，在随后的写入步骤期间加热电流的极性与一个相反。 该方法允许增加MRAM单元的使用寿命。

公开(公告)号：US20150179245A1

公开(公告)日：2015-06-25

申请号：US14405909

申请日：2013-06-07

Applicant: CROCUS Technology SA

Inventor： Jérémy Alvarez-Hérault ,  Ioan Lucian Prejbeanu ,  Ricardo Sousa

IPC: G11C11/16

CPC classification number: G11C11/1675 ,  G11C11/16 ,  G11C11/161

Abstract: Method for writing to a MRAM cell including a magnetic tunnel junction including a first and second ferromagnetic layer, and a tunnel barrier layer; and a bipolar transistor in electrical connection with one end of the magnetic tunnel junction, the bipolar transistor being arranged for controlling the passing and polarity of a heating current in the magnetic tunnel junction. The method includes a sequence of writing steps, each writing step including passing the heating current in the magnetic tunnel junction such as to heat it to a high temperature threshold; and once the magnetic tunnel junction has reached the high temperature threshold, adjusting a second magnetization of the second ferromagnetic layer for writing a write data; wherein during one of the writing steps, the polarity of the heating current is reversed from one during the subsequent writing step. The method allows for an increased lifespan of the MRAM cell.

Abstract translation: 写入包括包括第一和第二铁磁层的磁性隧道结的MRAM单元和隧道势垒层的方法; 以及与磁性隧道结的一端电连接的双极晶体管，所述双极晶体管布置成用于控制磁性隧道结中的加热电流的通过和极性。 该方法包括写入步骤序列，每个写入步骤包括使加热电流传递到磁性隧道结中，以将其加热到高温阈值; 并且一旦磁性隧道结已经达到高温阈值，则调整用于写入写入数据的第二铁磁层的第二磁化强度; 其中在一个写入步骤期间，在随后的写入步骤期间加热电流的极性与一个相反。 该方法允许增加MRAM单元的使用寿命。

公开(公告)号：US08971102B2

公开(公告)日：2015-03-03

申请号：US13739044

申请日：2013-01-11

Applicant: CROCUS Technology SA

Inventor： Ioan Lucian Prejbeanu ,  Ricardo Sousa

IPC: G11C11/00 ,  G11C11/16

CPC classification number: G11C11/1675 ,  G11C11/16 ,  G11C11/161

Abstract: The present disclosure concerns a method for writing to a MRAM cell comprising a magnetic tunnel junction formed from a storage layer having a storage magnetization; a reference layer having a reference magnetization; and a tunnel barrier layer included between the sense and storage layers; and a current line electrically connected to said magnetic tunnel junction; the method comprising: passing a heating current in the magnetic tunnel junction for heating the magnetic tunnel junction; passing a field current for switching the storage magnetization in a written direction in accordance with the polarity of the field current. The magnitude of the heating current is such that it acts as a spin polarized current and can adjust the storage magnetization; and the polarity of the heating current is such as to adjust the storage magnetization substantially towards said written direction.

Abstract translation: 本公开涉及一种用于写入到具有由具有存储磁化的存储层形成的磁性隧道结的MRAM单元的方法; 具有参考磁化的参考层; 以及包括在感测层和存储层之间的隧道势垒层; 以及电连接到所述磁性隧道结的电流线; 所述方法包括：使所述磁性隧道结中的加热电流通过以加热所述磁性隧道结; 根据励磁电流的极性，传递用于沿写入方向切换存储磁化的励磁电流。 加热电流的大小使得其作为自旋极化电流并且可以调节存储磁化强度; 并且加热电流的极性使得大致朝向所述写入方向调节存储磁化。