公开(公告)号：US20230036341A1

公开(公告)日：2023-02-02

申请号：US17789628

申请日：2020-09-04

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Jingchuan ZHAO ,  Zhili ZHANG ,  Sen ZHANG

IPC: H01L29/78 ,  H01L29/40 ,  H01L29/66

Abstract: Disclosed are a laterally diffused metal oxide semiconductor device and a method for preparing the same. The device includes a substrate (101) of a first conductivity type, a drift region (102) of a second conductivity type, a longitudinal floating field plate array and a plurality of implantation regions (103) of the first conductivity type. The drift region is located in the substrate of the first conductivity type. The longitudinal floating field plate array includes a plurality of longitudinal floating field plate structures (104) arranged at intervals in rows and columns. Each longitudinal floating field plate structures includes a dielectric layer (1041) disposed on an inner surface of a trench and a conductive layer (1042) filling the trench. The plurality of implantation regions are located in the drift region of, each implantation region is located between two adjacent longitudinal floating field plate structures in each row.

公开(公告)号：US20220336657A1

公开(公告)日：2022-10-20

申请号：US17620952

申请日：2020-05-26

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Zhili ZHANG ,  Jingchuan ZHAO ,  Sen ZHANG

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/66 ,  H01L29/40

Abstract: A laterally diffused metal-oxide-semiconductor (LDMOS) device and a method of manufacturing the LDMOS device are disclosed. The method includes: obtaining a substrate with a drift region formed thereon, the drift region having a first conductivity type and disposed on the substrate of a second conductivity type; etching the drift region to form therein a sinking structure, the sinking structure includes at least one of an implanting groove and an implanting hole; implanting ions of the second conductivity type at the bottom of the sinking structure; forming a buried layer of the second conductivity type by causing diffusion of the ions of the second conductivity type using a thermal treatment; and filling an electrical property modification material into the sinking structure, the electrical property modification material differs from the material of the drift region.

公开(公告)号：US20230146299A1

公开(公告)日：2023-05-11

申请号：US17912760

申请日：2021-07-02

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Jingchuan ZHAO ,  Nailong HE ,  Sen ZHANG ,  Zhili ZHANG ,  Hao WANG

IPC: H01L29/06 ,  H01L29/10 ,  H01L29/78 ,  H01L21/265 ,  H01L21/266 ,  H01L29/66

CPC classification number: H01L29/0634 ,  H01L29/0653 ,  H01L29/1095 ,  H01L29/7816 ,  H01L21/26513 ,  H01L21/266 ,  H01L29/66681

Abstract: A laterally diffused metal-oxide-semiconductor (LDMOS) device and a method for fabricating the LDMOS device are disclosed. The device includes: a substrate (101) having a second conductivity type; a drift region (102) that has a first conductivity type and is disposed on the substrate (101), wherein the first conductivity type is opposite to the second conductivity type; a plurality of layers of doped structures disposed in the drift region (102), each layer of the doped structure comprising at least one doped bar (105) extending in a lengthwise direction of a conductive channel; and a plurality of doped polysilicon pillars (106) disposed in the drift region (102) so as to extend downward through the doped bar (105) of at least one of the layer of doped structures, wherein ions doped in the doped polysilicon pillars (106) and ions doped in the doped bar have opposite conductivity types.

公开(公告)号：US20220359673A1

公开(公告)日：2022-11-10

申请号：US17623485

申请日：2020-05-26

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Jingchuan ZHAO ,  Zhili ZHANG ,  Sen ZHANG

IPC: H01L29/40 ,  H01L29/78 ,  H01L29/06 ,  H01L29/10 ,  H01L29/66

Abstract: A laterally diffused metal oxide semiconductor device and a manufacturing method thereof. The device includes: a substrate of a second conductivity type; a drift region arranged on the substrate and of a first conductivity type; a source region of the first conductivity type; a drain region of the first conductivity type; and a longitudinal floating field plate structure arranged between the source region and the drain region and including a dielectric layer arranged on an inner surface of a trench and polysilicon filling the trench. The trench extends from an upper surface of the drift region downward through the drift region into the substrate. At least two longitudinal floating field plate structures are provided, and at least two of the longitudinal floating field plate structures are located at different positions in a length direction of a conductive channel.