公开(公告)号：US20230095590A1

公开(公告)日：2023-03-30

申请号：US17799459

申请日：2020-12-09

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Youhui LI ,  Lijuan ZHU

IPC: G05F3/24 ,  G11C16/30

Abstract: A bias current generation circuit and a flash memory. The bias current generation circuit includes a voltage source, a switching circuit and a current generation circuit. The voltage source is configured to provide a voltage for generating a bias current. An input terminal of the switching circuit is connected to the voltage source, a control terminal of the switching circuit is configured to receive a control signal. The current generation circuit includes a first MOS transistor and a second MOS transistor, an input terminal and a control terminal of the first MOS transistor are connected to an output terminal of the switching circuit, an output terminal of the first MOS transistor is connected to an input terminal and a control terminal of the second MOS transistor, and an output terminal of the second MOS transistor is grounded.