公开(公告)号：US11605641B2

公开(公告)日：2023-03-14

申请号：US17257087

申请日：2019-10-12

申请人： CSMC TECHNOLOGIES FAB2 CO., LTD.

发明人： Song Zhang ,  Zhibin Liang ,  Yan Jin ,  Dejin Wang

IPC分类号： H01L27/11521

摘要： A flash device and a manufacturing method thereof. The method comprises: providing a substrate, and forming, on the substrate, a floating gate polycrystalline layer, a floating gate oxide layer, and a tunneling oxide layer; wherein the floating gate polycrystalline layer is formed on the substrate, the floating gate oxide layer is formed between the substrate and the floating gate polycrystalline layer, a substrate region at one side of the floating gate polycrystalline layer is a first substrate region, a substrate region at the other side of the floating gate polycrystalline layer is a second substrate region; forming, on the tunneling oxide layer, located in the first substrate region, a continuous non-conductive layer, the non-conductive layer extending to the tunneling oxide layer at a side wall of the floating gate polycrystalline layer; and forming, on the tunneling oxide layer, a polysilicon layer.

公开(公告)号：US11164946B2

公开(公告)日：2021-11-02

申请号：US16461721

申请日：2017-12-14

申请人： CSMC TECHNOLOGIES FAB2 CO., LTD.

发明人： Tao Liu ,  Zhibin Liang ,  Song Zhang ,  Yan Jin ,  Dejin Wang

IPC分类号： H01L29/423 ,  H01L21/28 ,  H01L29/66 ,  H01L27/11517 ,  H01L29/788

摘要： A manufacturing method for a flash device. A manufacturing method for a flash device, comprising: providing a substrate; forming sequentially, on the substrate, a floating gate (FG) oxide layer, an FG polycrystalline layer, and an FG mask layer; etching, at the FG location region, the FG polycrystalline layer and the FG mask layer, forming a window on the FG mask layer, and forming a trench on the FG polycrystalline layer, the window being communicated with the trench; performing second etching of the side wall of the window of the FG mask layer, enabling the width of the trench located on the FG polycrystalline layer to be less than the width of the secondarily-etched window located on the FG mask layer; and oxidizing the FG polycrystalline layer, enabling the oxide to fill the trench to form a field oxide layer; and etching an FG having sharp angles.