公开(公告)号：US20210240898A1

公开(公告)日：2021-08-05

申请号：US17053550

申请日：2019-08-15

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Nan ZHANG ,  Jing ZHOU ,  Hao WANG ,  Zhan GAO ,  Maoqian ZHU ,  Cheng ZHOU ,  Zhijin LI ,  Lin WU ,  Shuming GUO ,  Yong HUANG

IPC: G06F30/367 ,  G06F30/392

Abstract: The present application relates to a resistance simulation method for a power device, comprising: establishing an equivalent resistance model of a power device, wherein the connection relationship of N fingers is equivalent to N resistors Rb connected in parallel, input ends of adjacent resistors Rb are connected by means of a resistor Ra, output ends of adjacent resistors Rb are connected by means of a resistor Rc, R a = 1 N ⁢ R 0 , R c = 1 N ⁢ R 1 , and Rb=RDEV*N+RS+RD, wherein R0 and R1 are respectively resistances of a source metal strip and a drain metal strip, Rs is a metal resistor of a first intermediate layer connecting one source region to the source metal strip, RD is a metal resistor of a second intermediate layer connecting one drain region to the drain metal strip, and RDEV is the channel resistance of the power device; and calculating the resistance of the equivalent resistance model as the resistance of the power device.