公开(公告)号：US20230154549A1

公开(公告)日：2023-05-18

申请号：US17916927

申请日：2021-04-28

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Bin CHEN ,  Youhui LI ,  Ming GU ,  Xinmiao ZHAO ,  Hao WANG ,  Shuming GUO ,  Zongchuan WANG ,  Nan ZHANG

IPC: G11C16/30 ,  G11C16/26

CPC classification number: G11C16/30 ,  G11C16/26

Abstract: A semiconductor memory, comprising a negative voltage providing unit, which is used for providing a first negative voltage to a word line during a read operation, and comprises: a clamping unit that comprises an input end, a control end and an output end, wherein the input end is coupled to a common ground end of the memory, and the control end is used for receiving a first signal; an energy storage capacitor, a first end of which is coupled to the output end, and a second end that is used for receiving a second signal; and a negative voltage providing end which is coupled to the first end, wherein the clamping unit is used for: pulling the voltage at the output end to the voltage at the input end when the first signal is “0”; and clamping the output end at a clamping voltage when the first signal is “1”.

公开(公告)号：US20210240898A1

公开(公告)日：2021-08-05

申请号：US17053550

申请日：2019-08-15

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Nan ZHANG ,  Jing ZHOU ,  Hao WANG ,  Zhan GAO ,  Maoqian ZHU ,  Cheng ZHOU ,  Zhijin LI ,  Lin WU ,  Shuming GUO ,  Yong HUANG

IPC: G06F30/367 ,  G06F30/392

Abstract: The present application relates to a resistance simulation method for a power device, comprising: establishing an equivalent resistance model of a power device, wherein the connection relationship of N fingers is equivalent to N resistors Rb connected in parallel, input ends of adjacent resistors Rb are connected by means of a resistor Ra, output ends of adjacent resistors Rb are connected by means of a resistor Rc, R a = 1 N ⁢ R 0 , R c = 1 N ⁢ R 1 , and Rb=RDEV*N+RS+RD, wherein R0 and R1 are respectively resistances of a source metal strip and a drain metal strip, Rs is a metal resistor of a first intermediate layer connecting one source region to the source metal strip, RD is a metal resistor of a second intermediate layer connecting one drain region to the drain metal strip, and RDEV is the channel resistance of the power device; and calculating the resistance of the equivalent resistance model as the resistance of the power device.