公开(公告)号：US20150159046A1

公开(公告)日：2015-06-11

申请号：US14100339

申请日：2013-12-09

Applicant: Cabot Microelectronics Corporation

Inventor： Dmitry DINEGA ,  Sairam SHEKHAR ,  Renhe JIA ,  Daniel Mateja

IPC: C09G1/02 ,  H01L21/306

CPC classification number: C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/31053

Abstract: The present invention provides chemical mechanical polishing compositions and methods for polishing a substrate comprising silicon dioxide and silicon nitride, which provide selective removal of SiN relative to silicon oxide (e.g., PETEOS) on patterned wafers. In one embodiment, a CMP method comprises abrading a surface of a substrate comprising SiN and silicon oxide with a CMP composition to remove at least some SiN therefrom. The CMP composition comprises, consists essentially of, or consists of a particulate abrasive (e.g., ceria) suspended in an aqueous carrier and containing a cationic polymer bearing pendant quaternized nitrogen-heteroaromatic moieties, wherein the composition has a pH of greater than about 3.

Abstract translation: 本发明提供化学机械抛光组合物和用于抛光包含二氧化硅和氮化硅的衬底的方法，其提供相对于图案化晶片上的氧化硅（例如，PETEOS）的SiN选择性去除。 在一个实施例中，CMP方法包括用CMP组合物研磨包括SiN和氧化硅的衬底的表面以从其中去除至少一些SiN。 CMP组合物包含悬浮在水性载体中的颗粒磨料（例如二氧化铈）或由其组成，并且含有带季铵化氮杂芳族部分的阳离子聚合物，其中该组合物具有大于约3的pH。