公开(公告)号：US20040198892A1

公开(公告)日：2004-10-07

申请号：US10814714

申请日：2004-03-31

Applicant: Cabot Microelectronics Corporation

Inventor： Heinz H. Busta ,  David W. Boldridge ,  Ronald E. Myers

IPC: C08K003/04 ,  C08K003/34 ,  C08K003/40

CPC classification number: C08K3/04

Abstract: A field emitter source and method for making same. An x-ray and a high energy electron source is fabricated from the field emitter. The field emitter source composition comprises carbon black and a mixing medium. An alternative method of field emitter formulation includes providing a quantity of silica with the carbon black and a mixing medium. An x-ray source comprises a substrate and a carbon black field emitter composition provided along a surface of the substrate and an extraction grid to pull electrons from the field emitter film and a metal film biased at high voltage to accelerate the electrons. A conductive film is further provided along an upper support structure of the source, such that when the conductive film is struck by the accelerated electrons, the upper support structure converts the impinging high-energy electrons into x-rays. A high energy electron source is also disclosed similar to the x-ray source but without a conductive film and with appropriate apertures to facilitate egress of the high energy electrons.

Abstract translation: 场致发射源及其制作方法。 x射线和高能电子源由场发射器制造。 场致发射源组合物包含炭黑和混合介质。 场发射体配方的另一种方法包括提供一定量的二氧化硅与炭黑和混合介质。 x射线源包括沿着衬底的表面设置的衬底和炭黑场发射器组合物，以及用于从场致发射膜拉电子的提取栅极和以高电压偏置的金属膜以加速电子。 沿着源的上支撑结构进一步提供导电膜，使得当导电膜被加速的电子撞击时，上支撑结构将入射的高能电子转换为x射线。 类似于X射线源，也没有导电膜，并且具有合适的孔以便于高能电子的出口，也公开了高能电子源。

公开(公告)号：US20040175949A1

公开(公告)日：2004-09-09

申请号：US10382370

申请日：2003-03-06

Applicant: Cabot Microelectronics Corporation

Inventor： Jui-Kun Lee ,  Ronald E. Myers

IPC: C23F001/00 ,  B44C001/22 ,  C03C015/00 ,  H01L021/302 ,  C03C025/68 ,  H01L021/461

CPC classification number: C04B41/009 ,  C04B41/53 ,  C04B41/91 ,  H01M4/9025 ,  H01M8/1246 ,  H01M2008/1293 ,  Y02E60/525 ,  Y02P70/56 ,  C04B35/50

Abstract: The invention provides a method of polishing a substrate comprising a lanthanide-containing metal oxide material. The method comprises the steps of (i) providing a polishing system comprising (a) an abrasive, a polishing pad, or a combination thereof, (b) an acid, and (c) a liquid carrier, (ii) providing a substrate comprising a metal oxide layer, wherein the metal oxide layer comprises at least one lanthanide series element, and (iii) abrading at least a portion of the metal oxide layer with the polishing system to polish the substrate. The lanthanide-containing metal oxide material can be a lanthanide oxide, a doped lanthanide oxide, a lanthanide-doped metal oxide, a lanthanide perovskite, or any other suitable lanthanide-containing mixed metal oxide material, in particular those used as solid electrode and solid electrolyte materials in gas sensor and fuel cell devices.

Abstract translation: 本发明提供了一种抛光包含含镧系元素的金属氧化物材料的基材的方法。 该方法包括以下步骤：（i）提供抛光系统，其包括（a）研磨剂，抛光垫或其组合，（b）酸，和（c）液体载体，（ii）提供包含 金属氧化物层，其中所述金属氧化物层包含至少一种镧系元素，和（iii）用所述抛光系统研磨所述金属氧化物层的至少一部分以抛光所述衬底。 含镧系元素的金属氧化物材料可以是镧系元素氧化物，掺杂的镧系元素氧化物，镧系元素掺杂的金属氧化物，镧系元素钙钛矿或任何其它合适的含镧系元素的混合金属氧化物材料，特别是用作固体电极和固体 气体传感器和燃料电池装置中的电解质材料。