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公开(公告)号:US20220368111A1
公开(公告)日:2022-11-17
申请号:US17765751
申请日:2020-09-30
发明人: David Wallis , Rachel Oliver , Menno Kappers , Philip Dawson , Stephen Church , David Binks
摘要: A semiconductor structure comprising a matrix having a first cubic Group-III nitride with a first band gap, and a second cubic Group-III nitride having a second band gap and forming a region embedded within the matrix. The second cubic Group-III nitride comprises an alloying material which reduces the second band gap relative to the first band gap, a quantum wire is defined by a portion within the region embedded within the matrix, the portion forming a one-dimensional charge-carrier confinement channel, wherein the quantum wire is operable to exhibit emission luminescence which is optically polarised.