摘要:
The invention relates to organic semiconductive polymers comprising a new backbone system, monomers for the preparation of such polymers, methods for the preparation of such polymers and the use of such polymers in organic optoelectronic devices.
摘要:
Polymers for use in organic electroluminescent devices The invention relates to organic semiconductive polymers comprising a new backbone system, monomers for the preparation of such polymers, methods for the preparation of such polymers and the use of such polymers in organic optoelectronic devices.
摘要:
An oligomer or polymer comprising a first repeat unit and a second repeat unit that may be the same or different, the first repeat unit having formula (I): wherein each E independently represents optionally substituted nitrogen or optionally substituted phosphorus, with the proviso that at least one E is optionally substituted phosphorus; each Ar1, Ar2 and Ar3 is the same or different and independently represents an optionally substituted aryl or heteroaryl; n is 0-3; and in the case of unsubstituted nitrogen and phosphorus, the second repeat unit is directly conjugated to the first repeat unit.
摘要:
An oligomer or polymer comprising a first repeat unit and a second repeat unit that may be the same or different, the first repeat unit having formula (I): wherein each E independently represents optionally substituted nitrogen or optionally substituted phosphorus, with the proviso that at least one E is optionally substituted phosphorus; each Ar1, Ar2 and Ar3 is the same or different and independently represents an optionally substituted aryl or heteroaryl; n is 0-3; and in the case of unsubstituted nitrogen and phosphorus, the second repeat unit is directly conjugated to the first repeat unit.
摘要:
The present invention relates to new semiconductive oligomers and polymers, a process for their manufacture and their use in thin film electronic and optical devices, such as organic light emitting diodes (OLED) and photovoltaic devices, eg. solar cells and photodetectors.
摘要:
The present invention relates to new semiconductive oligomers and polymers, a process for their manufacture and their use in thin film electronic and optical devices, such as organic light emitting diodes (OLED) and photovoltaic devices, eg. solar cells and photodetectors.
摘要:
The instant invention relates to a new method for the synthesis of monomers and their use inter alia in the manufacture of semiconductive polymers. Monomers, in particular, asymmetric monomers, such as asymmetric fluorene compounds, are valuable material in the manufacture of semiconductive polymers. The know methods for producing asymmetric monomers, such as asymmetric fluorene compounds, are expensive due to the formation of by-products.The method according to the present invention avoids the formation of such by-products and is described in more detail in claims 1 to 14.
摘要:
A process for preparing high molecular weight polymers or copolymers by Suzuki coupling. The catalyst used in the process comprises a source of palladium and a source of a phosphine characterized in that at least one substituent on the phosphine is an ortho substituted aryl group. The process is suitable for the preparation of polymers for use in electronic and optoelectronic applications.
摘要:
The instant invention relates to a new method for the synthesis of monomers and their use inter alia in the manufacture of semiconductive polymers. Monomers, in particular, asymmetric monomers, such as asymmetric fluorene compounds, are valuable material in the manufacture of semiconductive polymers. The know methods for producing asymmetric monomers, such as asymmetric fluorene compounds, are expensive due to the formation of by-products. The method according to the present invention avoids the formation of such by-products and is described in more detail in claims 1 to 14.
摘要:
An improved composition for ink jet printing an opto-electrical device, which composition comprises a solution-processable host material and a metal complex, wherein the viscosity of the composition exceeds 12 mPa·s at 20° C.