公开(公告)号：US20230282473A1

公开(公告)日：2023-09-07

申请号：US17999361

申请日：2021-05-19

申请人： CENTRAL GLASS COMPANY, LIMITED

发明人： Yuzo OKUMURA ,  Yuki FUKUI ,  Saori SHIOTA ,  Yoshiharu TERUI ,  Soichi KUMON

IPC分类号： H01L21/02 ,  C09D183/08 ,  C09D7/20

CPC分类号： H01L21/0206 ,  C09D183/08 ,  C09D7/20

摘要： A surface treatment method for a semiconductor substrate of the present invention is a treatment method of treating a main surface of a semiconductor substrate that has, on the main surface of the substrate, a pattern formation region in which a pattern having a concave-convex structure with a pattern dimension of 30 nm or less is formed and a pattern non-formation region in which no pattern is formed, the method including a surface treatment step of bringing a surface treatment agent composition including a silylating agent into contact with the pattern formation region and the pattern non-formation region on the main surface of the semiconductor substrate, in which, with respect to a surface of the pattern non-formation region after the surface treatment step, an IPA contact angle with 2-propanol is 2° or more at a room temperature of 25° C. and/or a water contact angle with pure water is 50° or more at the room temperature of 25° C.

公开(公告)号：US20190074173A1

公开(公告)日：2019-03-07

申请号：US16084697

申请日：2017-03-07

申请人： Central Glass Company, Limited

发明人： Yuki FUKUI ,  Takashi SAIO ,  Atsushi RYOKAWA ,  Satoru NARIZUKA ,  Saori SHIOTA ,  Shota WATANABE ,  Shintaro SASAKI ,  Susumu IWASAKI

IPC分类号： H01L21/02 ,  C09D5/00 ,  C07F7/10

摘要： Disclosed are a water-repellent protective film forming agent for forming a water-repellent protective film on a silicon element-containing surface of a wafer and a water-repellent protective film forming liquid chemical in which the water-repellent protective film forming agent is dissolved in an organic solvent, characterized in that the water-repellent protective film forming agent consists of at least one kind of silicon compound selected from the group consisting of a sulfonimide derivative represented by the following general formula [1], a sulfonimide derivative represented by the following general formula [2] and a sulfonmethide derivative represented by the following general formula [3].

公开(公告)号：US20230282474A1

公开(公告)日：2023-09-07

申请号：US17999363

申请日：2021-05-19

申请人： CENTRAL GLASS COMPANY, LIMITED

发明人： Yuzo OKUMURA ,  Yuki FUKUI ,  Saori SHIOTA ,  Yoshiharu TERUI ,  Soichi KUMON

IPC分类号： H01L21/02

CPC分类号： H01L21/0206

摘要： A surface treatment method for semiconductor substrates of the present invention is a treatment method of treating a main surface of a semiconductor substrate that has, on the main surface of the substrate, a pattern formation region in which a pattern having a concave-convex structure with a pattern dimension of 30 nm or less is formed and a bevel region which is formed on a periphery of the pattern formation region, the method including a surface treatment step of bringing a surface treatment agent composition including a silylating agent into contact with the pattern formation region and the bevel region on the main surface of the semiconductor substrate, in which, with respect to a surface of a silicon oxide substrate brought into contact with the surface treatment agent composition, an IPA receding contact angle is 3° or more at a room temperature of 25° C., and/or a water receding contact angle is 40° or more at the room temperature of 25° C.

公开(公告)号：US20200350176A1

公开(公告)日：2020-11-05

申请号：US16957331

申请日：2018-12-26

申请人： CENTRAL GLASS COMPANY, LIMITED

发明人： Yuki FUKUI ,  Yoshiharu TERUI ,  Shuhei YAMADA ,  Yuzo OKUMURA ,  Soichi KUMON ,  Saori SHIOTA ,  Katsuya KONDO

IPC分类号： H01L21/306 ,  H01L21/02 ,  C07F7/10

摘要： According to the present disclosure, there is provided a water-repellent protective film-forming liquid chemical capable of achieving an improved water repellency imparting effect. The water-repellent protective film-forming liquid chemical according to the present disclosure contains the following compositions: (I) an aminosilane composition of the following general formula [1]; (II) a silicon compound of the following general formula [2]; and (III) an aprotic solvent, wherein the amount of the component (I) contained is 0.02 to 0.5 mass % based on the total amount of the components (I) to (III). (R1)aSi(H)b(NH2)4-a-b  [1] (R2)cSi(H)dX4-c-d  [2]