Method for Cleaning Wafer, and Chemical Used in Such Cleaning Method

    公开(公告)号:US20170287705A1

    公开(公告)日:2017-10-05

    申请号:US15512350

    申请日:2015-09-11

    IPC分类号: H01L21/02 C07C309/03 C07F7/08

    摘要: Provided herein is a method for cleaning a wafer having a fine uneven surface pattern that at least partially contains a silicon element using a wafer cleaning device that includes a vinyl chloride resin as a liquid contacting member, the method including retaining a water-repellent protective film-forming chemical in at least a recessed portion of the uneven pattern to form a water-repellent protective film on a surface of the recessed portion, the water-repellent protective film-forming chemical containing: a monoalkoxysilane represented by the following general formula [1], (R1)aSi(H)3-a(OR2)  [1]; a sulfonic acid represented by the following general formula [2], R3—S(═O)2OH  [2]; and a diluting solvent, wherein the diluting solvent contains 80 to 100 mass % of alcohol with respect to the total 100 mass % of the diluting solvent.

    Cleaning Agent for Silicon Wafer
    4.
    发明申请
    Cleaning Agent for Silicon Wafer 审中-公开
    硅晶片清洗剂

    公开(公告)号:US20140174465A1

    公开(公告)日:2014-06-26

    申请号:US14136381

    申请日:2013-12-20

    IPC分类号: H01L21/02

    摘要: A cleaning agent for a silicon wafer (a first cleaning agent) contains at least a water-based cleaning liquid and a water-repellent cleaning liquid for providing at least a recessed portion of an uneven pattern with water repellency during a cleaning process. The water-based cleaning liquid is a liquid in which a water-repellent compound having a reactive moiety chemically bondable to Si element in the silicon wafer and a hydrophobic group, and an organic solvent including at least an alcoholic solvent are mixed and contained. With this cleaning agent, the cleaning process which tends to induce a pattern collapse can be improved.

    摘要翻译: 一种用于硅晶片(第一清洁剂)的清洁剂至少含有一种水基清洗液和一种防水清洗液,用于在清洁过程中至少提供具有防水性的凹凸图案的凹陷部分。 水性清洗液是将具有与硅晶片中的Si元素和疏水性基团化学结合的反应性部分的防水化合物和至少含有醇溶剂的有机溶剂混合并包含的液体。 利用该清洁剂,可以提高倾向于引起图案塌陷的清洁处理。

    Liquid Chemical for Forming Protecting Film
    6.
    发明申请
    Liquid Chemical for Forming Protecting Film 有权
    用于形成保护膜的液体化学品

    公开(公告)号:US20160148802A1

    公开(公告)日:2016-05-26

    申请号:US14952354

    申请日:2015-11-25

    IPC分类号: H01L21/02 B08B3/10 B08B3/08

    摘要: Disclosed is a liquid chemical for forming a water-repellent protecting film at least on a surface of a recessed portion of an uneven pattern at the time of cleaning a wafer having a finely uneven pattern at its surface and containing silicon at at least a part of the uneven pattern. This liquid chemical contains a silicon compound A represented by the general formula: R1aSi(H)bX4-a-b and an acid A, the acid A being at least one selected from the group consisting of trimethylsilyl trifluoroactate, trimethylsilyl trifluoromethanesulfonate, dimethylsilyl trifluoroactate, dimethylsilyl trifluoromethanesulfonate, butyldimethylsilyl trifluoroactate, butyldimethylsilyl trifluoromethanesulfonate, hexyldimethylsilyl trifluoroacetate, hexyldimethylsilyl trifluoromethanesulfonate, octyldimethylsilyl trifluoroactate, octyldimethylsilyl trifluoromethanesulfonate, decyldimethylsilyl trifluoroacetate and decyldimethylsilyl trifluoromethanesulfonate.

    摘要翻译: 公开了一种液体化学品,用于至少在凹凸图案的凹陷部分的表面上在其表面上清洁具有精细不均匀图案的晶片的表面上形成防水保护膜,并且在至少部分 不均匀的图案。 该液体化学品含有由通式R1aSi(H)bX4-ab表示的硅化合物A和酸A,酸A为选自三甲基甲硅烷基三氟甲酸三甲基甲硅烷基酯,三氟甲磺酸三甲基甲硅烷基酯,三氟甲磺酸二甲基甲硅烷基酯,三氟甲磺酸二甲基甲硅烷基酯 丁基二甲基甲硅烷基三氟甲酸酯,丁基二甲基甲硅烷基三氟甲磺酸酯,己基二甲基甲硅烷基三氟乙酸酯,己基二甲基甲硅烷基三氟甲磺酸酯,辛基二甲基甲硅烷基三氟甲酸酯,辛基二甲基甲硅烷基三氟甲磺酸酯,癸基二甲基甲硅烷基三氟乙酸酯和癸基二甲基甲硅烷基三氟甲磺酸酯。

    Wet Etching Method
    8.
    发明公开
    Wet Etching Method 审中-公开

    公开(公告)号:US20230374669A1

    公开(公告)日:2023-11-23

    申请号:US18030404

    申请日:2021-10-11

    IPC分类号: C23F1/10 H01L21/311

    CPC分类号: C23F1/10 H01L21/31111

    摘要: The present disclosure provides a wet etching method including pretreating a metal-containing film on a substrate with a surface modification liquid and etching the metal-containing film with an etching liquid, wherein the etching liquid is a solution containing: a β-diketone with a trifluoromethyl group bonded to a carbonyl group; and an organic solvent, wherein the metal-containing film contains a metal element capable of forming a complex with the β-diketone, wherein the surface modification liquid contains an acidic substance against the metal element, and wherein the wet etching method is carried out through: a first step of bringing the surface modification liquid into contact with the metal-containing film, thereby forming an oxide layer of the metal element at a surface of the metal-containing film; and a second step of bringing the etching liquid into contact with the metal-containing film on which the oxide layer has been formed.

    SURFACE TREATMENT AGENT AND SURFACE-TREATED BODY MANUFACTURING METHOD

    公开(公告)号:US20210090881A1

    公开(公告)日:2021-03-25

    申请号:US16772024

    申请日:2018-12-14

    IPC分类号: H01L21/02 C09D5/00 B08B3/08

    摘要: According to the present disclosure, there are provided a surface treatment agent having the advantage that the raw material components can be dissolved in a short time during preparation of the surface treatment agent and capable of exerting a good water repellency imparting effect, and a method of manufacturing a surface-treated body with the use of the surface treatment agent. The surface treatment agent according to the present disclosure includes the following components: (I) at least one kind selected from the group consisting of silicon compounds represented by the following general formulas [1], [2] and [3]; (II) at least one kind selected from the group consisting of a nitrogen-containing heterocyclic compound represented by the following general formula [4], a nitrogen-containing heterocyclic compound represented by the following general formula [5], and imidazole; and (III) an organic solvent.