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公开(公告)号:US20230151163A1
公开(公告)日:2023-05-18
申请号:US17905978
申请日:2021-03-10
发明人: Yoshiharu TERUI , Soichi KUMON , Yuki FUKUI
CPC分类号: C08J5/18 , C08J3/09 , B01D7/00 , H01L21/02057
摘要: The sublimable film formation composition of the present invention includes a sublimable substance and a solvent in which a saturation solubility of the sublimable substance is more than 10% by mass.
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公开(公告)号:US20180308683A1
公开(公告)日:2018-10-25
申请号:US15753032
申请日:2016-08-10
发明人: Takashi SAIO , Yuzo OKUMURA , Yuki FUKUI , Hiroki FUKAZAWA , Tomohiro TAKATA , Soichi KUMON , Kazuyuki ABE , Shota WATANABE , Masayoshi IMACHI
CPC分类号: H01L21/02057 , B08B3/00 , C11D3/162 , H01L21/304 , H01L21/6704
摘要: To provide a water-repellent protective film-forming liquid chemical used in a process of cleaning a wafer by means of a cleaning machine whose liquid contact member contains a vinyl chloride resin. A liquid chemical is used, which includes an alkoxysilane represented by the following general formula [1]; at least one kind selected from the group consisting of a sulfonic acid represented by the following general formula [2], an anhydride of the sulfonic acid, a salt of the sulfonic acid and a sulfonic acid derivative represented by the following general formula [3]; and a diluent solvent containing at least one kind selected from the group consisting of a hydrocarbon, an ether and a thiol. (R1)aSi(H)b(OR2)4-a-b [1] R3—S(═O)2OH [2] R3—S(═O)2O—Si(H)3-c(R4)c [3]
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公开(公告)号:US20170287705A1
公开(公告)日:2017-10-05
申请号:US15512350
申请日:2015-09-11
发明人: Takashi SAIO , Yuzo OKUMURA , Yuki FUKUI , Soichi KUMON
IPC分类号: H01L21/02 , C07C309/03 , C07F7/08
CPC分类号: H01L21/02087 , C07C309/03 , C07F7/081 , H01L21/02057 , H01L21/0209 , H01L21/31138
摘要: Provided herein is a method for cleaning a wafer having a fine uneven surface pattern that at least partially contains a silicon element using a wafer cleaning device that includes a vinyl chloride resin as a liquid contacting member, the method including retaining a water-repellent protective film-forming chemical in at least a recessed portion of the uneven pattern to form a water-repellent protective film on a surface of the recessed portion, the water-repellent protective film-forming chemical containing: a monoalkoxysilane represented by the following general formula [1], (R1)aSi(H)3-a(OR2) [1]; a sulfonic acid represented by the following general formula [2], R3—S(═O)2OH [2]; and a diluting solvent, wherein the diluting solvent contains 80 to 100 mass % of alcohol with respect to the total 100 mass % of the diluting solvent.
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公开(公告)号:US20140174465A1
公开(公告)日:2014-06-26
申请号:US14136381
申请日:2013-12-20
发明人: Soichi KUMON , Takashi SAIO , Shinobu ARATA , Hidehisa NANAI , Yoshinori AKAMATSU , Shigeo HAMAGUCHI , Kazuhiko MAEDA
IPC分类号: H01L21/02
CPC分类号: H01L21/02052 , B08B3/00 , C09D183/04 , C11D3/162 , C11D7/5022 , H01L21/00 , H01L21/02054
摘要: A cleaning agent for a silicon wafer (a first cleaning agent) contains at least a water-based cleaning liquid and a water-repellent cleaning liquid for providing at least a recessed portion of an uneven pattern with water repellency during a cleaning process. The water-based cleaning liquid is a liquid in which a water-repellent compound having a reactive moiety chemically bondable to Si element in the silicon wafer and a hydrophobic group, and an organic solvent including at least an alcoholic solvent are mixed and contained. With this cleaning agent, the cleaning process which tends to induce a pattern collapse can be improved.
摘要翻译: 一种用于硅晶片(第一清洁剂)的清洁剂至少含有一种水基清洗液和一种防水清洗液,用于在清洁过程中至少提供具有防水性的凹凸图案的凹陷部分。 水性清洗液是将具有与硅晶片中的Si元素和疏水性基团化学结合的反应性部分的防水化合物和至少含有醇溶剂的有机溶剂混合并包含的液体。 利用该清洁剂,可以提高倾向于引起图案塌陷的清洁处理。
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公开(公告)号:US20180323076A1
公开(公告)日:2018-11-08
申请号:US15773834
申请日:2016-10-26
发明人: Akifumi YAO , Soichi KUMON , Masaki FUJIWARA , Hidehisa NANAI
CPC分类号: H01L21/31133 , B08B3/08 , B08B3/10 , C11D7/02 , C11D7/261 , C11D7/5018 , H01L21/304 , H01L21/6708
摘要: A processing method of a semiconductor substrate according the present invention includes: cleaning a surface of the semiconductor substrate with a water-based cleaning liquid; and drying the semiconductor substrate by replacing the water-based cleaning liquid attached to the surface of the semiconductor substrate with a supercritical fluid, characterized by using as the supercritical fluid a C2-C6 fluoroalcohol-containing solvent whose Fe, Ni, Cr, Al, Zn, Cu, Mg, Li, K, Na and Ca contents are each 500 mass ppb or less. In this processing method, it is possible to reduce the amount of fluorine atoms released in the supercritical fluid.
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公开(公告)号:US20160148802A1
公开(公告)日:2016-05-26
申请号:US14952354
申请日:2015-11-25
发明人: Soichi KUMON , Takashi SAIO , Shinobu ARATA , Masanori SAITO , Atsushi RYOKAWA , Shuhei YAMADA , Hidehisa NANAI , Yoshinori AKAMATSU
CPC分类号: H01L21/02057 , B08B3/08 , B08B3/10 , C09K3/18 , C11D1/82 , C11D3/162 , C11D11/0047 , H01L21/02082
摘要: Disclosed is a liquid chemical for forming a water-repellent protecting film at least on a surface of a recessed portion of an uneven pattern at the time of cleaning a wafer having a finely uneven pattern at its surface and containing silicon at at least a part of the uneven pattern. This liquid chemical contains a silicon compound A represented by the general formula: R1aSi(H)bX4-a-b and an acid A, the acid A being at least one selected from the group consisting of trimethylsilyl trifluoroactate, trimethylsilyl trifluoromethanesulfonate, dimethylsilyl trifluoroactate, dimethylsilyl trifluoromethanesulfonate, butyldimethylsilyl trifluoroactate, butyldimethylsilyl trifluoromethanesulfonate, hexyldimethylsilyl trifluoroacetate, hexyldimethylsilyl trifluoromethanesulfonate, octyldimethylsilyl trifluoroactate, octyldimethylsilyl trifluoromethanesulfonate, decyldimethylsilyl trifluoroacetate and decyldimethylsilyl trifluoromethanesulfonate.
摘要翻译: 公开了一种液体化学品,用于至少在凹凸图案的凹陷部分的表面上在其表面上清洁具有精细不均匀图案的晶片的表面上形成防水保护膜,并且在至少部分 不均匀的图案。 该液体化学品含有由通式R1aSi(H)bX4-ab表示的硅化合物A和酸A,酸A为选自三甲基甲硅烷基三氟甲酸三甲基甲硅烷基酯,三氟甲磺酸三甲基甲硅烷基酯,三氟甲磺酸二甲基甲硅烷基酯,三氟甲磺酸二甲基甲硅烷基酯 丁基二甲基甲硅烷基三氟甲酸酯,丁基二甲基甲硅烷基三氟甲磺酸酯,己基二甲基甲硅烷基三氟乙酸酯,己基二甲基甲硅烷基三氟甲磺酸酯,辛基二甲基甲硅烷基三氟甲酸酯,辛基二甲基甲硅烷基三氟甲磺酸酯,癸基二甲基甲硅烷基三氟乙酸酯和癸基二甲基甲硅烷基三氟甲磺酸酯。
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公开(公告)号:US20240038540A1
公开(公告)日:2024-02-01
申请号:US18254346
申请日:2022-02-21
发明人: Yoshiharu TERUI , Yuzo OKUMURA , Soichi KUMON
IPC分类号: H01L21/306 , C23C16/02 , C23C16/44 , C23C16/56
CPC分类号: H01L21/306 , C23C16/0227 , C23C16/44 , C23C16/56
摘要: A surface treatment composition of the present invention is a surface treatment composition that are supplied as a vapor to a surface of a wafer having an uneven pattern on the surface and used to form a water-repellent protective film on the surface, the surface treatment composition containing a silylating agent and a solvent, in which the silylating agent contains a trialkylsilylamine, the solvent contains at least one or more selected from the group consisting of glycol ether acetate and glycol acetate, and a total content of the glycol ether acetate and the glycol acetate is 50% by mass or more in 100% by mass of a total amount of the solvent.
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公开(公告)号:US20230374669A1
公开(公告)日:2023-11-23
申请号:US18030404
申请日:2021-10-11
发明人: Kazuki YOSHIURA , Takuya OKADA , Kenta WATANABE , Soichi KUMON , Yosuke NAKAMURA , Takahisa TANIGUCHI
IPC分类号: C23F1/10 , H01L21/311
CPC分类号: C23F1/10 , H01L21/31111
摘要: The present disclosure provides a wet etching method including pretreating a metal-containing film on a substrate with a surface modification liquid and etching the metal-containing film with an etching liquid, wherein the etching liquid is a solution containing: a β-diketone with a trifluoromethyl group bonded to a carbonyl group; and an organic solvent, wherein the metal-containing film contains a metal element capable of forming a complex with the β-diketone, wherein the surface modification liquid contains an acidic substance against the metal element, and wherein the wet etching method is carried out through: a first step of bringing the surface modification liquid into contact with the metal-containing film, thereby forming an oxide layer of the metal element at a surface of the metal-containing film; and a second step of bringing the etching liquid into contact with the metal-containing film on which the oxide layer has been formed.
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公开(公告)号:US20220020582A1
公开(公告)日:2022-01-20
申请号:US17295739
申请日:2019-10-21
发明人: Yuki FUKUI , Yuzo OKUMURA , Yoshiharu TERUI , Soichi KUMON
摘要: A bevel portion treatment agent composition of the present invention is a bevel portion treatment agent composition containing a silylating agent, which is used for treating a bevel portion of a wafer, in which a surface modification index Y and a surface modification index Z measured by a predetermined procedure have a characteristic of satisfying 0.5≤Y/Z≤1.0.
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公开(公告)号:US20210090881A1
公开(公告)日:2021-03-25
申请号:US16772024
申请日:2018-12-14
发明人: Yuki FUKUI , Yuzo OKUMURA , Yoshiharu TERUI , Soichi KUMON
摘要: According to the present disclosure, there are provided a surface treatment agent having the advantage that the raw material components can be dissolved in a short time during preparation of the surface treatment agent and capable of exerting a good water repellency imparting effect, and a method of manufacturing a surface-treated body with the use of the surface treatment agent. The surface treatment agent according to the present disclosure includes the following components: (I) at least one kind selected from the group consisting of silicon compounds represented by the following general formulas [1], [2] and [3]; (II) at least one kind selected from the group consisting of a nitrogen-containing heterocyclic compound represented by the following general formula [4], a nitrogen-containing heterocyclic compound represented by the following general formula [5], and imidazole; and (III) an organic solvent.
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